Mw Current Feedback Amplifier Data
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2N3904 MMBT3904 PZT3904 - NPN General-Purpose Amplifier
www.mouser.com2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier ... Total Device Dissipation 625 350 1,000 mW Derate Above 25°C 5.0 2.8 8.0 mW/°C RθJC Thermal Resistance, ... I - COLLECTOR CURRENT (mA) h - VOLTAGE FEEDBACK RATIO (x10 ) V = 10 VCE C re f = 1.0 kHz T = 25 CA o _ 4.
Next Generation OP07 Ultralow Offset Voltage Operational ...
www.analog.comOffset Voltage Operational Amplifier Data Sheet OP77 Rev. G Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use.
LF356-MIL JFET Input Operational Amplifier datasheet
www.ti.comAn IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LF356-MIL SNOSD55 –JUNE 2017 LF356-MIL JFET Input Operational Amplifier 1 1 Features 1• Advantages – Replace Expensive Hybrid and ...
2 GHz to 28 GHz, GaAs pHEMT MMIC Low Noise Amplifier …
www.analog.comnoise amplifier that operates between 2 GHz and 28 GHz. The amplifier typically provides 15 dB of gain, 2.0 dB of noise figure, 26 dBm of output IP3, and 16 dBm of output power for 1 dB gain compression, requiring 64 mA from a 5 V supply. The HMC7950 is self biased with only a single positive supply needed to achieve a drain current, I DD, of ...
ON Semiconductor Is Now
www.onsemi.comamplifier, current sensing comparator, and a high current totem pole output ideally suited for driving a power MOSFET. Also included are protective features consisting of input and reference undervoltage lockouts each with hysteresis, cycle−by−cycle current limiting, programmable output deadtime, and a latch for single pulse metering.
P2N2222A Amplifier Transistors - ON Semiconductor
www.onsemi.comAmplifier Transistors NPN Silicon ... Emitter−Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Junction Temperature Range