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P Channel 20 V D S

Found 8 free book(s)
DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED …

DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED …

www.aldinc.com

ald1105 advanced linear devices 3 of 9 typical p-channel performance characteristics output characteristics drain source voltage (v)

  Channel

N- and P-Channel 20 V (D-S) MOSFET

N- and P-Channel 20 V (D-S) MOSFET

www.vishay.com

Vishay Siliconix Si5515CDC Document Number: 68747 S10-0548-Rev. B, 08-Mar-10 www.vishay.com 1 N- and P-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to …

  Vishay, Channel, N and p channel 20 v

Complementary N- and P-Channel 20 V (D-S) MOSFET

Complementary N- and P-Channel 20 V (D-S) MOSFET

www.vishay.com

Document Number: 71168 S10-2432-Rev. E, 25-Oct-10 www.vishay.com 5 Vishay Siliconix Si1016X P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Output Characteristics

  Vishay, Channel, P channel 20 v

FDN340P Single P-Channel, Logic Level, PowerTrench® …

FDN340P Single P-Channel, Logic Level, PowerTrench® …

www.onsemi.com

Ó2007 Semiconductor Components Industries, LLC. October-2017, Rev. 5 Publication Order Number: FDN340P/D FDN340P Single P-Channel, Logic Level, PowerTrenchÒ MOSFET Features

  Channel

PD - 9.1478A IRF4905S/L - Infineon Technologies

PD - 9.1478A IRF4905S/L - Infineon Technologies

www.irf.com

IRF4905S/L HEXFET® Power MOSFET PD - 9.1478A l Advanced Process Technology l Surface Mount (IRF4905S) l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated 8/25/97 S D G Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

  Channel, Irf4905s

PD - 91405C IRF5210S/L - Infineon Technologies

PD - 91405C IRF5210S/L - Infineon Technologies

www.irf.com

IRF5210S/L HEXFET® Power MOSFET PD - 91405C l Advanced Process Technology l Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated 5/13/98 S D G Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

  Channel, Irf5210s

DMG2305UX - Diodes Incorporated

DMG2305UX - Diodes Incorporated

www.diodes.com

DMG2305UX Document number: DS36196 Rev. 7 - 2 © Diodes Incorporated 1 of 6 www.diodes.com September 2018 DMG2305UX P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV

  Channel, Dmg2305ux, Dmg2305ux p

2N7000 - Small Signal MOSFET - ON Semiconductor

2N7000 - Small Signal MOSFET - ON Semiconductor

www.onsemi.com

2N7000G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain−Source ...

  2n7000

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