Search results with tag "Magnetoresistive random access memory"

Magnetoresistive Random Access Memory (MRAM)

operation, and put MRAM on a much more even footing with semiconductor memory for read access time. Figure 5. Pseudo-Spin Valve Cell. Figure 5 illustrates the construction of a PSV cell. There are two magnetic layers that have mismatched properties so that one tends to switch at lower fields than the other .

  Memory, Operations, Access, Random, Ramm, Magnetoresistive, Magnetoresistive random access memory