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Ramm January 2018 Final - MARS RETIREES
www.marsretirees.orgRAMMRAMM Retiree’s Association of Martin Marietta Corporation P.O. Box 18115 Baltimore, Maryland 21220-0215 January 2018 1 Tabs versus Credit
Magnetoresistive Random Access Memory (MRAM)
www.nve.comoperation, and put MRAM on a much more even footing with semiconductor memory for read access time. Figure 5. Pseudo-Spin Valve Cell. Figure 5 illustrates the construction of a PSV cell. There are two magnetic layers that have mismatched properties so that one tends to switch at lower fields than the other .
Radiation Effects Assessment of MRAM Devices - NASA
nepp.nasa.govRadiation Effects Assessment of MRAM Devices Mohamed Elghefari Jet Propulsion Laboratory Pasadena, California Steve McClure Jet Propulsion Laboratory Pasadena, California Jet Propulsion Laboratory California Institute of Technology Pasadena, California JPL Publication 08-19 5/08 .