Search results with tag "Nexfet"
CSD18532KCS 60-V N-Channel NexFET Power …
www.ti.comCSD18532KCS 60-V N-Channel NexFET Power MOSFET (Rev. B)
CSD18502Q5B 40 V N-Channel NexFET™ Power MOSFET
www.ti.com7 CSD18502Q5B www.ti.com CSD18502Q5B.
CSD87355Q5D Synchronous Buck NexFET™ Power …
www.ti.comOutput Current (A) Efficiency (%) Power Loss (W) 0 5 10 15 20 25 30 35 40 45 74 0 76 1 78 2 80 3 82 4 84 5 86 6 88 7 90 8 92 9 94 10 96 11 D000 V GS = 5 V V IN = 12 V V OUT = 1.3 V L OUT = 0.29 P H fSW = 500 kHz T A = 25 qC VDD BOOT
CSD17308Q3 30-V N-Channel NexFET Power …
www.ti.comV GS - Gate-to-Source Voltage (V) R DS(on) - On-State Resistance (m:) 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 D007 Q g - Gate Charge (nC) V GS - Gate-to-Source Voltage (V) 0 1 2 3 4 5 6 7 0 1
CSD18532Q5B 60-V N-Channel NexFET™ Power MOSFETs
www.ti.com7 csd18532q5b www.ti.com slps322d –november 2012–revised february 2018
CSD17573Q5B 30-V N-Channel NexFET™ Power …
www.ti.com0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 10 12 14 16 18 20 V GS Gateto Source Voltage (V) R DS (on) OnState Resistance (m W) T C = 25°C, I D = 35A T C = 125°C, I D = 35A G001 0 1 2 3 4 5 6 7
100 V N-Channel NexFET Power MOSFET (Rev. B)
www.ti.com0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 V GS Gateto Source Voltage (V) R DS (on) OnState Resistance (m W) T C = 25°C, I D = 17A T C = 125 ...
History of FET technology and the move to NexFET™
www.ti.comtechnology a de facto standard area for low-voltage power MOS-FETs. However, the large trench wall area leads to a large value of built-in capacitors.
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