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NexFETTM High Performance MOSFETs - TI.com

NexFETTM High Performance MOSFETs - TI.com

www.ti.com

SLPA010 2 This current overshoot is absorbed by the output capacitance of the FETs, resulting in overshoot of the Switch Node voltage. The FET capacitances and the parasitic inductance (package inductance, poor layout, etc.) create the resonant network which

  Performance, High, Mosfets, Nexfettm high performance mosfets, Nexfettm, Slpa010

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