Search results with tag "Enhancement mode field effect"
BSS138 - onsemi.cn
www.onsemi.cnN-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast ...
BSS123 - ON Semiconductor
www.onsemi.comN-Channel Logic Level Enhancement Mode Field Effect Transistor BSS123 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast ...
AOD4189 P-Channel Enhancement Mode Field Effect …
aosmd.comSymbol VDS VGS IDM IAR EAR TJ, TSTG Symbol Typ Max 15 20 41 50 RθJC 2 2.4 °C 62.5 31-55 to 175 W 2.5 1.6 Continuous Drain Current B,H Parameter Maximum Units TC=25°C TC=100°C-40 Absolute Maximum Ratings TC=25°C unless otherwise noted V TA=70°C Power Dissipation B Avalanche Current C Repetitive avalanche energy L=0.1mH C A
AOD464 N-Channel Enhancement Mode Field Effect …
aosmd.comSymbol V DS V GS I DM I AR E AR T J, T STG Symbol Typ Max 15 18 45 55 Maximum Junction-to-Case RθJC 1 1.5 B Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s °C/W Maximum Junction-to-Ambient A W