P-Channel 30-V (D-S) MOSFET - Vishay

1 New Product Si2307 CDS. Vishay Siliconix P-Channel 30-V (D-S) MOSFET . PRODUCT SUMMARY FEATURES. Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)a, b Qg (Typ.). TrenchFET Power MOSFET . at VGS = - 10 V - - 30. at VGS = - V - nC RoHS. APPLICATIONS COMPLIANT. TO-236 Load Switch for Portable Devices (SOT-23). G 1. 3 D S. S 2. G. Top View Si2307 CDS (N7)*. * Marking Code D. Ordering Information: Si2307 CDS-T1-E3 (Lead (Pb)-free). Si2307 CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET . ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30. V. Gate-Source Voltage VGS 20. TC = 25 C - TC = 70 C - Continuous Drain Current (TJ = 150 C)a, b ID.

2 TA = 25 C - , b TA = 70 C - , b A. Pulsed Drain Current (10 s Pulse Width) IDM - 12. TC = 25 C - Continuous Source-Drain Diode Currenta, b IS. TA = 25 C - , b TC = 25 C TC = 70 C Maximum Power Dissipationa, b PD W. TA = 25 C , b TA = 70 C , b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150. C. Soldering Recommendations (Peak Temperature)c 260. THERMAL RESISTANCE RATINGS. Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t 5s RthJA 90 115. C/W. Maximum Junction-to-Foot (Drain) Steady State RthJF 55 70. Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under Steady State conditions is 166 C/W. Document Number: 68768 S-81580-Rev.

3 A, 07-Jul-08 1. New Product Si2307 CDS. Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 A - 30 V. VDS Temperature Coefficient VDS/TJ - 32. ID = - 250 A mV/ C. VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 A -1 -3 V. Gate-Source Leakage IGSS VDS = 0 V, VGS = 20 V - 100 nA. VDS = - 30 V, VGS = 0 V -1. Zero Gate Voltage Drain Current IDSS A. VDS = - 30 V, VGS = 0 V, TJ = 55 C - 10. On-State Drain Currenta ID(on) VDS 5 V, VGS = - 10 V -6 A. VGS = - 10 V, ID = - A Drain-Source On-State Resistancea RDS(on).

4 VGS = - V, ID = - A Forward Transconductancea gfs VDS = - 10 V, ID = - A 7 S. b Dynamic Input Capacitance Ciss 340. Output Capacitance Coss VDS = - 15 V, VGS = 0 V, f = 1 MHz 67 pF. Reverse Transfer Capacitance Crss 51. Total Gate Charge Qg Gate-Source Charge Qgs VDS = - 15 V, VGS = - V, ID = - A nC. Gate-Drain Charge Qgd Gate Resistance Rg f = 1 MHz 10 . Turn-On Delay Time td(on) 40 60. Rise Time tr VDD = - 15 V, RL = 15 40 60. Turn-Off Delay Time td(off) ID - 1 A, VGEN = - V, Rg = 1 20 40. Fall Time tf 17 30. ns Turn-On Delay Time td(on) 10. Rise Time tr VDD = - 15 V, RL = 15 13 25. Turn-Off Delay Time td(off) ID - 1 A, VGEN = - 10 V, Rg = 1 17 30. Fall Time tf 15. Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 C - A.

5 Pulse Diode Forward Current ISM - 12. Body Diode Voltage VSD IS = - A, VGS = 0 V - - V. Body Diode Reverse Recovery Time trr 17 30 ns Body Diode Reverse Recovery Charge Qrr 11 20 nC. IF = - A, dI/dt = 100 A/ s, TJ = 25 C. Reverse Recovery Fall Time ta 12. ns Reverse Recovery Rise Time tb 5. Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.

6 Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68768. 2 S-81580-Rev. A, 07-Jul-08. New Product Si2307 CDS. Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 12 VGS = 10 thru 6 V. VGS = 5 V. 10. VGS = 4 V. I D - Drain Current (A). I D - Drain Current (A). 8. 6 TC = 25 C. 4. VGS = 3 V. 2 TC = 125 C. TC = - 55 C. VGS = 2 V. 0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V). Output Characteristics Transfer Characteristics 600. R DS(on) - On-Resistance ( ). 450. C - Capacitance (pF). Ciss VGS = V. 300. VGS = 10 V. 150 Coss Crss 0. 0 3 6 9 12 0 6 12 18 24 30. ID - Drain Current (A) VDS - Drain-to-Source Voltage (V).

7 On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 ID = A ID = A. VDS = 15 V VGS = 10 V. VGS - Gate-to-Source Voltage (V). 8. R DS(on) - On-Resistance VDS = V. (Normalized). 6. VGS = V. VDS = V. 4. 2. 0 0 2 4 6 8 - 50 - 25 0 25 50 75 100 125 150. Qg - Total Gate Charge (nC) TJ - Junction Temperature ( C). Gate Charge On-Resistance vs. Junction Temperature Document Number: 68768 S-81580-Rev. A, 07-Jul-08 3. New Product Si2307 CDS. Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 TJ = 25 C ID = A. R DS(on) - On-Resistance ( ). 1 I S - Source Current (A). TJ = 150 C. TJ = 125 C. TJ = - 50 C. TJ = 25 C. 0 2 4 6 8 10. VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V).

8 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10. 8. ID = 250 A. VGS(th) Variance (V). ID = 1 mA. Power (W). 6. 4. 2 TA = 25 C. 0. - 50 - 25 0 25 50 75 100 125 150 1 10 100 1000. TJ - Temperature ( C) Time (s). Threshold Voltage Single Pulse Power, Junction-to-Ambient 100. Limited by RDS(on)*. 10 100 s I D - Drain Current (A). 1 ms 1. 10 ms 100 ms TA = 25 C. Single Pulse 1 s, 10 s BVDSS Limited 100 s, DC. 1 10 100. VDS - Drain-to-Source Voltage (V). * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68768. 4 S-81580-Rev. A, 07-Jul-08. New Product Si2307 CDS. Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1.

9 Duty Cycle = Normalized Effective Transient Thermal Impedance Single Pulse 10 -4 10 -3 10 -2 10 -1 1 10 100 1000. Square Wave Pulse Duration (s). Normalized Thermal Transient Impedance, Junction-to-Ambient 1. Duty Cycle = Normalized Effective Transient Thermal Impedance Notes: PDM. t1. t2. t1. 1. Duty Cycle, D =. t2. 2. Per Unit Base = RthJF = 70 C/W. 3. TJM - TA = PDMZthJA(t). Single Pulse 4. Surface Mounted 10 -4 10 -3 10 -2 10 -1 1 10. Square Wave Pulse Duration (s). Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.

10 For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: 68768 S-81580-Rev. A, 07-Jul-08 5. Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD. b 3. E1 E. 1 2. S e e1. D. mm C. " C mm A A2 q Gauge Plane Seating Plane Seating Plane A1 C. L. L1. MILLIMETERS INCHES. Dim Min Max Min Max A A1 A2 b c D E E1 e BSC Ref e1 BSC Ref L L1 Ref Ref S Ref Ref q 3 8 3 8 . ECN: S-03946-Rev. K, 09-Jul-01. DWG: 5479. Document Number: 71196 09-Jul-01 1. AN807. Vishay Siliconix Mounting LITTLE FOOTR SOT-23 Power mosfets Wharton McDaniel Surface-mounted LITTLE FOOT power mosfets use integrated ambient air. This pattern uses all the available area underneath the circuit and small-signal packages which have been been modified body for this purpose.