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1 INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS 2011 EDITION EMERGING RESEARCH MATERIALS THE ITRS IS DEVISED AND INTENDED FOR TECHNOLOGY ASSESSMENT ONLY AND IS WITHOUT REGARD TO ANY COMMERCIAL CONSIDERATIONS PERTAINING TO INDIVIDUAL PRODUCTS OR EQUIPMENT. THE INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS: 2011 THE INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS: 2011 International Technology Roadmap for Semiconductors 2011 Edition( 2011 ) ITRS STRJ JEITA ITRS STRJ 15 WG: Working Group ITRS 20 1000 ITRS STRJ ITRS ITRS ITRS 2005 ITRS 2007 ITRS ITRS 2009 ITRS ITRS Microsoft Excel ITRS STRJ JEITA STRJ ITRS ITRS ITRS ITRS

2 Executive Summary Acknowledgments ITRS ITRS(International Technology Roadmap for Semiconductors) ITRS: International Technology Roadmap for Semiconductors ITRS International Technology Roadmap for Semiconductors Executive Summary Glossary ITRS JEITA SRTJ ITRS ITRS STRJ 2012 5 JEITA STRJ ORIGINAL (ENGLISH VERSION) COPYRIGHT 2011 SEMICONDUCTOR INDUSTRY ASSOCIATION All rights reserved ITRS SEMATECH, Inc.

3 , 257 Fuller Road, Albany, NY12203 Japanese translation by the JEITA, Japan Electronics and Information Technology Industries Association under the license of the Semiconductor Industry Association ( ) ITRS 2011 Edition page XX, Figure(Table) YY ITRS 2011 Edition JEITA XX , ( )YY ---------------------------------------- ------- : 03-5218-1068 : INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS: 2011 THE INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS: 2011 TABLE OF CONTENTS (Emerging Research Materials).. 1 1. (Scope)..1 2. (Difficult Challenges)..2 3. (Introduction)..3 4. (Emerging Research Device Materials)..4 (Emerging Memory Materials).. 4 (Emerging Logic Materials).. 7 (Spin Materials).. (Complex Metal Oxide Materials, Interfaces, and Superlattices)..23 5. (Lithography Materials).

4 26 (Resist Materials).. 27 (Directed Self Assembly for Lithgraphy Extension)..31 6. (Emerging Front End Processes and Process Integration, Devices, and Structures Material Challenges and Options)..34 (Doping and Deposition).. 35 ( )(Directed Self Assembly of Useful Nanomaterials (See the Lithography Section Discussion)).. 38 / (Selective Etch and Clean/Surface Preparation)..38 (Low Damage Dopant Processing).. 39 (Contacts).. 39 7. (Interconnects)..39 (Novel Ultrathin Barriers).. 39 (Novel Interconnects).. 41 Low k (Low K Interlevel Dielectric).. 43 8. (Assembly and Packaging)..43 (Materials for 3D Interconnects).. 44 (Polymer Materials for Future Packaging)..46 (Low Dimensional Materials for Future Packaging)47 9. (Environment, Safety, and Health).

5 49 10. (Metrology)..50 (Characterization and Imaging of Nano-scale Structures and Composition).. 50 (Metrology Needs for Interfaces and Embedded Nano-structures)1, 50 (Characterization of Vacancies and Defects in Nano-scale Structures) (Wafer Level Mapping of Properties of Nano-scale ERM)2, 51 (Metrology Needs for Simultaneous Spin and Electrical Measurements) 52 (Metrology Needs for Complex Metal Oxide Systems)19-24..53 (Metrology for Molecular Devices)..53 (Metrology Needs for Macromolecular Materials) (Metrology Needs for Directed Self-assembly) (Modeling and Analysis of Probe-Sample Interactions)..54 (Metrology Needs for Ultra-scaled Devices)45-48 54 (Metrology for ERM Environmental Safety and Health).

6 55 ERM (Progress of Metrology for ERM Device Materials)..55 /Cu (Low-K/Cu Interconnect Metrology)..56 11. / (Modeling and Simulation).. 57 (Synthesis)..60 (Structure and Properties)..60 TCAD (Development of Platform for Different Simulation Tools, Such as TCAD and Ab-Initio)..63 (Metrology and Characterization)..63 12. (ERM Transition Table).. 64 13. 65 LIST OF FIGURES Figure ERM1 Polymer Composite Materials Coupling 47 Figure ERM2 Modeling from Synthesis to Predicting 57 Figure ERM3 Multi-scale Perspective in Nanotechnology where Materials Form an Important Role at Different Levels.. 59 LIST OF TABLES Table ERM1 Emerging Research Materials Difficult Challenges .. 2 Table ERM2 Applications of Emerging Research Materials .. 3 Table ERM3 ERM Memory Material 4 Table ERM4 Challenges for ERM in Alternate Channel Applications .. 8 Table ERM5 Alternate Channel Materials Critical 16 Table ERM6 Spin Devices versus Materials.

7 18 Table ERM7 Spin Material 20 Table ERM8 Challenges for Lithography 27 Table ERM9 Directed Self Assembly Critical 34 Table ERM10 FEP / PIDS Challenges for Deterministic 35 Table ERM11 Interconnect Material 39 Table ERM12 Nanomaterial Interconnect Material 39 Table ERM13 Assembly and Packaging ERM 44 Table ERM14 ITWG Earliest Potential ERM Insertion Opportunity 50 Table ERM15 Transition Table for Emerging Research 64 THE INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS: 2011 THE INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS: 2011 Emerging Research Materials1 EMERGING RESEARCH MATERIALS 1. (SCOPE) Emerging Research Materials, ERM ITRS ITRS (ITWG) ERM III-V Ge (low dimensional materials)( (CNTs) ) (Macromolecules) (Self-directed assembled materials) (Spin materials) (Complex metal oxides) (Selected interfaces) 2011 CMOS CMOS (directed self-assembly) ( ) ERM ERD (FEP) (A&P)

8 ERD p III-V n Ge beyond CMOS 2010 2011 STT-RAM Redox RAM RRAM ReRAM Atom switch CBRAM ERD ITRS ERM FEP ERM ERM Cu 20nm Ultra-low-k (ILD) ERM ERM n InGaAs p Ge FEP PIDS p III-V n Ge ERM ERM Zr Ru TWG THE INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS: 2011 2 Emerging Research Materials THE INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS: 2011 ERM ERM p III-V n Ge (Low dimensional materials) (Macromolecules) (Self-assembled materials) (Spin materials) (Complex metal oxides) (heterointerfaces) Tabl e E RM2 ERM ITRS ERM 2.

9 (DIFFICULT CHALLENGES) ERM Table ERM1 ERM ERD ERM ERM Table ERM1 Emerging Research Materials Difficult ChallengesDifficult Challenges 2018 2026 Summary of Issues and opportunities SRAM and FLASH scaling in 2D will reach definite limits within the next several years (see PIDS Difficult Challenges). These limits are driving the need for new memory technologies to replace SRAM and possibly FLASH memories by 2018. Identify the most promising technical approach(es) to obtain electrically accessible, high-speed, high-density, low-power, (preferably) embeddable volatile and non-volatile RAM Scale high-speed, dense, embeddable, volatile, and non-volatile memory technologies to replace SRAM and / or FLASH for manufacture by 2018.

10 The desired material/device properties must be maintained through and after high temperature and corrosive chemical processing. Reliability issues should be identified & addressed early in the technology development Develop 2nd generation new materials to replace silicon (or InGaAs, Ge) as an alternate channel and source/drain to increase the saturation velocity and to further reduce Vdd and power dissipation in MOSFETs while minimizing leakage currents for technology scaled to 2018 and beyond. Develop means to control the variability of critical dimensions and statistical distributions ( , gate length, channel thickness, S/D doping concentrations, etc.) Accommodate the heterogeneous integration of dissimilar materials. The desired material/device properties must be maintained through and after high temperature and corrosive chemical processing Scale CMOS to and beyond 2018 - 2026 Reliability issues should be identified & addressed early in this ultimately scaled CMOS as a platform technology into new domains of application.