8. ドーピング - rs.tus.ac.jp

1 90 8. ( ) Si 1022[ /cm3] 9-nie~10-nine (1/1010~1/1011, 1011~1012[ /cm3]) B( ), P( ), As( ) 1015[ /cm3] Si Si 8-1, 8-2 300 C Si EG( = EC EV) B P, As 8-1 8-2 (a) n ( ) (b) p ( ) 8-3 CMOS Si 8-4 8-3 CMOS 91 IC 8-1 NMOS-FET ( 8-5) ( 8-6) ( 8-7) ( 8-8) 4 8-1 pn IC CMOS IC pn ( ) ( ) ( ) ( ) SIMOX ( ) 8-4 CMOS FET (shallow trench isolation, STI )

2 A~P 16 A NMOS B PMOS C NMOS D PMOS E NMOS F PMOS G p H n I NMOS J PMOS K NMOS L PMOS M n+ N p+ O n P p+ 92 8-5 NMOS-FET (a) Si3N4/SiO2 (b) B ( 8-4: E) (c) LOCOS (local oxidation of silicon) (d) P As ( 8-4:I) (e) (f) Al 8-6 (a) SiO2 (b) P n+ (c) (d) Al 93 8-7 (a) (b)B-B ( )A-A SiO2 8-8 (a) (b) p (c) (d) n+ 94 (1)

3 Si 2 8-9 1 3 8-10, 8-11, 8-12 3 Si B, P, As 8-9 x = 0 -x, +x 8-10 I Si H, O, Cu, Fe, Au, Na 8-11 II (a) (b) 8-12 III Si P, B, As 95 (2) 8-13 ( 8-14) ( 8-15) 8-13 8-13 (a) (d) 96 8-13 Fick 2 ( ) J x, t N(x, t) Fick 2 J = - D N(x, t) / x ( ) N(x, t) / t = - D J / x = D 2N(x, t) / x2 ( ) D (diffusion coefficient) ( )

4 N(x, t) = No erfc[ x/ 2( Dt )1/2] ( ) erfc( ) (complementary error function) (error function) erf( ) erfc( ) = 1 - erf( ) ( ) erf( ) = ( )1/2exp[- 2] ( ) ( ) 8-14( ) 8-15( ) Csub x p, n (junction depth) 8-14 8-15 97 8-16 ( ) 8-17 ( ) SiO2 ( ) N(x, t) = [No/( D t )1/2]exp[ - x2/ 4D t] ( ) No = N(0, 0) ( ) 8-15 ( 8-14 ) 8-14 ( ) 98 SiO2 SiO2 Si Si SiO2 Si (8-6) 8-16 8-17 2 (3) 8-5, 8-6, 8-7, 8-9 8-18 p n 3 B BF3 ( ) BCl3 ( ) B2H6 ( ) P PH3 ( ) PF5 ( ) POCl3( ) As AsH3 ( ) AsF3 ( )

5 N2 O2 600 C ( ) CVD(chemical vapor deposition, ) O2 950 C 30min Si Si 8-19 CVD POCl3(POCL, phosphorous-oxychloride), BBr3, [CH3O]3B(TMB, trimethylborate), Sb3Cl5 8-18 (a) p Si SiO2 (b) (c) P As (d) n 99 BN (1000~1100 C) Si (4) ( ), ( ) D (cm2/sec) D = Do exp[-EA/kT] ( ) Do EA (eV) k T (K) 8-2 Si Do, EA 8-21 Si H2(H), Li, Na, Cu, Fe, Au Sn, Ge, Si, As, 8-19 CVD (a) (b) 8-20 ( ) 8-2 Si Do(cm2/sec) EA(eV)

6 B Al Ga In P As Sb 100 Sb, B, C 8-21 Si 8-22 Si ( ) 101 8-22 Si B, P, As Si (1) ( ) Si 8-23 8-3 8-23 (a) (b) 8-3 ( ) 8-3 ( ) 102 (2) ( ) Si 8-24 Si Si Si 8-25 ( ) (projected range) (projected-straggle)

7 8-26, 8-27 3 8-29 Si 8-24 Si Si<110> 103 Rp2 R 8-25 B Si Rp R 8-26 (B, P, Sb, As Si) 8-27 8-28 (3) Si 3 B As 8-29 8-30 B RTP(rapid-thermal-processing) 104 8-29 (a) (b) , (c) (d) 8-30 (B ) 1 B 8-31, 8-32 8-31 B 8-32 B 35min 105 (4) ( )

8 8-33 8-33 AsH3, PH3, BF3 (As), (P), (Sb2O3), (InCl3) 8-34 8-35 8-36 8-37 12354 8-33 1 2 3 4 5 ( ) 106 8-34 ( ) 8-35 8-37 300mm (1) IC (2) 2 ( ) (3) Fick (4) (5) 3 (6) CMOS 8-36 2mA, 220kV, 200W/H 107 3 (7) (8) (9) RTP (10) (11) 1mm 40mm 2