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Contact Resistance and Leakage Current of GaN Devices with ...
Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be
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Analysis of Electrical Characteristics of AlGaN/GaN …
www.jsts.org356 HYUN-SOO LEE et al : ANALYSIS OF ELECTRICAL CHARACTERISTICS OF ALGAN/GAN ON SI LARGE SBD BY CHANGING … II. DEVICE FABRICATION The GaN-SBD devices were fabricated on an
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THERMAL CONTACT RESISTANCE: EXPERIMENTS AND …
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