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1 P-Channel Enhancement Mode reserves the right to make changes to improve reliability or manufacturability without notice, andadvise customers to obtain the latest version of relevant information to verify before placing Sinopower Semiconductor, - May, 2015 FeaturesApplicationsPin DescriptionOrdering and Marking InformationP-Channel MOSFET -30V/-40A,RDS(ON) = (max.) @ VGS =-10 VRDS(ON) = 11m (max.) @ VGS = HBM ESD protection level pass 8KV 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin platetermination finish; which are fully compliant with RoHS.

2 SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weightin homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). Power Management in Notebook Computer,Portable Equipment and Battery ( 5,6,7,8 )(4)(1, 2, 3)DDSSNote : The diode connected between the gate andsource serves only as protection against ESD.

3 Nogate overvoltage rating is (Saw-EP)SSSGDDDDSM3331 PSHandling CodeTemperature RangePackage CodePackage Code QG : (Saw-EP) Operating Junction Temperature Range C : -55 to 150 oCHandling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free DeviceSM3331PS QG :SM3331 XXXXX - Lot CodeAssembly Sinopower Semiconductor, - May, 2015 Absolute Maximum Ratings (TA = 25 C Unless Otherwise Noted)Symbol Parameter Rating Unit Common Ratings VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage 25 V TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 C IS Diode Continuous Forward Current TC=25 C -40 b TC=25 C -40 b ID Continuous Drain Current TC=100 C -40 b IDM Pulsed Drain Current TC=25 C -160 b A TC=25 C PD Maximum Power Dissipation TC=100 C 25 W R JC Thermal Resistance-Junction to Case Steady State 2 C/W TA=25 C ID Continuous Drain Current TA=70 C A TA=25 C

4 PD Maximum Power Dissipation TA=70 C W t 10s 30 R JA Thermal Resistance-Junction to Ambient Steady State 75 C/W IAS a Avalanche Current, Single pulse L= 27 A EAS a Avalanche Energy, Single pulse L= 182 mJ Note a UIS tested and pulse width are limited by maximum junction temperature 150oC (initial temperature TJ = 25oC). Note b Package limited. Sinopower Semiconductor, - May, 2015 Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250 A -30 - - V VDS=-24V, VGS=0V - - -1 IDSS Zero Gate Voltage Drain Current TJ=85 C - - -30 A VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250 A V IGSS Gate Leakage Current VGS= 20V, VDS=0V - - 10 A VGS=-10V, IDS=-20A - RDS(ON)

5 C Drain-Source On-state Resistance VGS= , IDS=-10A - 8 11 m Diode Characteristics VSD c Diode Forward Voltage ISD=-1A, VGS=0V - -1 V trr d Reverse Recovery Time - 19 - ns Qrr d Reverse Recovery Charge ISD=-20A, dlSD/dt=100A/ s - 6 - nC Dynamic Characteristics d Rg Gate Resistance VGS=0V, VDS=0V,F=1 MHz - 3 - Ciss Input Capacitance - 2862 - Coss Output Capacitance - 593 - Crss Reverse Transfer Capacitance VGS=0V, VDS=-15V, Frequency= - 470 - pF td(ON) Turn-on Delay Time - 20 - tr Turn-on Rise Time - 19 - td(OFF) Turn-off Delay Time - 93 - tf Turn-off Fall Time VDD=-15V, RL=15 , IDS=-1A, VGEN=-10V, RG=6 - 56 - ns Gate Charge Characteristics d Qg Total Gate Charge VDS=-15V, VGS= , IDS=-20A - 30 - Qg Total Gate Charge 60 Qgs Gate-Source Charge - - Qgd Gate-Drain Charge VDS=-15V, VGS=-10V, IDS=-20A - 20 - nC Note c Pulse test ; pulse width 300 s, duty cycle 2%.

6 Note d Guaranteed by design, not subject to production testing. Electrical Characteristics (TA = 25 C Unless Otherwise Noted) Sinopower Semiconductor, - May, 2015 Typical Operating Characteristics-ID - Drain Current (A)Drain CurrentTj - Junction Temperature ( C)Safe Operation Area-VDS - Drain - Source Voltage (V)Thermal Transient ImpedanceSquare Wave Pulse Duration (sec)Power DissipationPtot - Power (W)Tj - Junction Temperature ( C)-ID - Drain Current (A)Normalized Transient Thermal Resistance020406080100120140160010203040 506070TC=25oC 02040608010012014016001020304050TC=25oC, VG=-10V Rds(on) LimitTC= JC :2 Pulse Duty = Sinopower Semiconductor, - May, 2015 Typical Operating Characteristics (Cont.)

7 RDS(ON) - On - Resistance (m )Drain-Source On Resistance-ID - Drain Current (A) Tj - Junction Temperature ( C)Gate Threshold Voltage-VDS - Drain-Source Voltage (V)-ID - Drain Current (A)Output Characteristics-VGS - Gate - Source Voltage (V)Normalized Threshold VoltageGate-Source On ResistanceRDS(ON) - On Resistance (m ) ,-5,-6,-7,-8,-9,-10V 081624324002468101214 VGS=-10V VGS= IDS= A Sinopower Semiconductor, - May, 2015 Typical Operating Characteristics (Cont.)-VDS - Drain - Source Voltage (V)Drain-Source On ResistanceNormalized On Resistance Tj - Junction Temperature ( C)C - Capacitance (pF) -VSD - Source - Drain Voltage (V)Source-Drain Diode Forward-IS - Source Current (A)CapacitanceGate ChargeQG - Gate Charge (nC)-VGS - Gate - source Voltage (V) @Tj=25oC.

8 VGS = -10V IDS = -20A Tj=150oCTj=25oC 0510152025300500100015002000250030003500 40004500 Frequency=1 MHz CrssCossCiss0102030405060012345678910 VDS=-15V IDS=-20A Sinopower Semiconductor, - May, 2015 Avalanche Test Circuit and WaveformsEASVDDtAVIASVDStpVDSX(SUS) VDDVDSLILRGtpSwitching Time Test Circuit and Waveformstd(on) trtd(off) tfVGSVDS90%10% Sinopower Semiconductor, - May, 2015 DisclaimerSinopower Semiconductor, Inc. (hereinafter Sinopower ) has been making great efforts to development high quality and better performance products to satisfy all customers needs.

9 However, a product may fail to meet customer s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results.

10 The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury.