細膜 氮化鎵功率元件簡介 - edma.org.tw

1 Overview of GaN Based Power Device .. (Gallium nitride).. 1950 (Sili- . con) (Germanium) PN . (Thyristor) .. 1960 . BJT 1970 MOSFET 1980 . IGBT .. Watt Megawatt (EC, Critical electric field) . Hz MHz .. [1] .. 30 20 1 2014 6 .. (Eg, Bandgap) it)[3] . [2] . (Gallium arsenide) . EC = 105 ( Eg ) .. (Silicon carbide) .. junction leakage . current (Dislocation density) 0/cm2 . (Electron saturation velocity) HVPE . 105/cm2 . Na-flux . JFOM(Johnson s Figure of Merit) 103/cm2 . BFOM(Baliga s Figure of Mer- . FOM . 20 1 2014 6 31.. taneous polarization) .. (Piezoelectric po- larization).

2 (Metastable) (Strained). GaN on Si (6 . ) GaN on Ga-face AlGaN/GaN . Si AlGaN 20 nm Al . pattern . substrate supper lattice buffer epitaxial (2 DEG) 3-13x1012/. lateral overgrowth cm2[4] AlGaAs . 109/cm2 GaN on Sap- . phire LED 2 DEG 1500 cm2/Vs .. 8 2. 10 /cm GaN on SiC (Drift region) AlGaN/GaN .. GaN .. 106/cm2 .. (Polar- ization) . III-V . wurtize .. (Spon- AlGaN/GaN . 32 20 1 2014 6 .. AlGaN/ 93% [6] . GaN 1 nm AlN . 1000 oC . (Alloy scattering) . AlN junction depth . 2 DEG . 15 x1012/cm2 [5] [7] p-type . acceptor level 170 meV . barrier AlInN 10% 1. o AlN cm 1050 C.)

3 2 DEG . in situ doping .. p-type n-type .. Ti/Al/Ni/Au . n-type n-type . (Dopant) donor level Au-free 30 meV 100% . cm 10-5 cm2 . (Ion implantation) 1100 oC MOSFET .. 20 1 2014 6 33.. SiO2 . III-V MOSFET 2011 Hosei University Hitachi Cable 1100. MOS (Interface defect V m cm2 PIN BFOM. density, DIT) 1012-1013/cm2eV 3 GW/cm2 2013 Avogy . 100 cm2/ 10 A 2600 V PIN . Vs 2 m cm2 2014 . 3700 V m cm2 . PIN avalanche . (Car- rier lifetime) PIN .. 3 V turn-on voltage . 2010 Hosei University . Hitachi Cable 10A 1100 V . m cm2 turn-on voltage 1V . (Quasi-vertical) 1994 Cal Tech.

4 450 V GaN on Sapphire . Velox 2007 600 V GaN. on Sapphire .. 34 20 1 2014 6 .. 2010 Powdec . 600 V GaN . GaN on Sapphire . 2007 Georgia Tech.. 500 V m cm2 GaN on SiC PIN . GaN on Si 2 DEG . 2014 MIT . 205 V 6 m cm2 . 300 V 10 m cm2 PIN .. MOSFET . AlGaN/GaN . 2 DEG 5 m . GaN on Si . (Normally-off) enhancement mode .. 2007 Toyota planer gate . HFET m cm2 . Normally-on Vth -16 V . 2010 Sumitomo 670 V . m cm2 vertical channel HFET . m cm2 Vth V AlGaN/GaN . 2014 Toyoda Gosei 1600 V . trench gate MOSFET 2008 Panasonic su- m cm2 Vth 5 V perjunction 9300. V 176 m cm 2 GaN on Sapphire.

5 Ron-BV . 2011 . buffer layer 3400. V m cm2 GaN on Sapphire . 2013 Hongik . GaN on Si . Ohmic Schottky . 20 1 2014 6 35.. turn-on voltage . 1500V AlGaN/GaN . HEMT 2009 RPI . 2007 Panasonic 10400 V RESURF . 186 m cm2 GaN on Sapphire HEMT MOSFET 730 V . HT-AlN buffer layer AlN passiv- 34 m cm2 . ation . MOS- 2009 Furukawa 1730 FET . V m cm2 GaN on Si HEMT HEMT . field plate MOSFET . 2010 MIT . GaN on Si HEMT .. 500 V 1500 V . m cm2 2006 UCSB 2 DEG . field plate 1900 HEMT MOSFET . V m cm2 GaN on SiC HEMT . Normally-off . MOSFET 2 DEG HEMT .. 36 20 1 2014 6 .. 2006 . Toshiba (Recess).

6 2008 RPI . MOS Vth . V 2000 University . of South Carolina p-GaN gate . HEMT Panasonic EPC . Vth 1 V . 2005 . Vth -4 . V V .. 2 DEG 2009 NEC . Vth . V nano-ribbon . channel 2012 MIT MIS . tri-gate Vth V . Normally-off .. 1. Akio Nakagawa, Yusuke Kawaguchi and Kazutoshi Nakamura, Silicon Limit Electrical Characteristics of HEMT Power Devices and ICs, ISPSD, pp. (Current collapse) 26-28, 2008. 2. Jerry L. Hudgins, Grigory S. Simin, Enrico Santi, and M. Asif Khan, An Assessment of Wide Bandgap Semiconductors for Power Devices, passivation I E E E Tr a n s a c t i o n o n P ow e r layer field plate Electronics, Vol.

7 18, No. 3, pp. 907- 914, 2003. 3. B . J a y a n t B a l i g a , P o w e r Semiconductor Device Figure of Merit for High-Frequency Applications, 20 1 2014 6 37.. IEEE Electron Device Letters, Vol. 10, Transistors with Re-grown AlGaN/. No. 10, pp. 455-457, 1989. GaN Two-Dimensional Electron 4. O. Ambacher, B. Foutz, J. Smart, J. Gas Channels on GaN Substrates, . R. Shealy, N. G. Weimann, K. Chu, Applied Physics Express, Vol. 3, p. M. Murphy, A. J. Sierakowski, W. J. 054201, 2010. Schaff, L. F. Eastman, R. Dimitrov, A. 9. T. Oka, Y. Ueno, T. Ina, and K. Mitchell, and M.

8 Stutzmann, Two Hasegawa, Vertical GaN-based Dimensional Electron Gases Induced Trench Metal Oxide Semiconductor by Spontaneous and Piezoelectric Field-effect Transistors on a Free- Polarization in Undoped and Doped standing GaN Substrate with Blocking AlGaN/GaN heterostructures, Voltage of kV, Applied Physics Applied Physics Letters, Vol. 87, No. Express, Vol. 7, p. 021002, 2014. 1, pp. 334-344, 2000 10. Y. Hatakeyama, K. Nomoto, N. 5. L. Shen, S. Heikman, B. Moran, R. Kaneda, T. Kawano, T. Mishima, and Coffie, Zhang, D. Buttari, I. P. T. Nakamura, Over GW/cm2. Smorchkova, S.

9 Keller, S. P. DenBaars, Figure-of-Merit GaN p-n Junction and U. K. Mishra, AlGaN/AlN/GaN Diodes on Free-Standing GaN. High-Power Microwave HEMT, Substrates, IEEE Electron Device IEEE Electron Device Letters, Vol. 22, Letters, Vol. 32, No. 12, pp. 1674- No. 10, pp. 457-459, 2001. 1676, 2011. 6. Kucheyev, Williams, 11. I. Kizilyalli, A. P. Edwards, H. Pearton, Ion implantation into Nie, D. Disney, D. Bour, High GaN, Materials Science and Voltage Vertical GaN p-n Diodes Engineering, Vo. 33 pp. 51-107, 2001. With Avalanche Capability, IEEE. 7. R. Groh, G. Gerey, L. Bartha, and Electron Device Letters, Vol.

10 60, No. J. I. Rankove, On the Thermal 10, pp. 3067-3069, 2013. Decomposition of GaN in Vacuum, 12. I. Kizilyalli, A. P. Edwards, H. Nie, D. Physica Status Solidi (a), Vol. 26, pp. Bour, T. Prunty, and D. Disney, 353-357, 1974. kV Vertical GaN PN Diodes, IEEE. 8. M. Okada, Y. Saitoh, M. Yokoyama, Electron Device Letters, Vol. 35, No. K. Nakata, S. Yaegassi, K. Katayama, 2, pp. 247-249, 2014. M. Ueno, M. Kiyama, T. Katsuyama, 13. Limb, D. Yoo, Ryou, and T. Nakamura, Novel Vertical C. Shen and Dupuis, Low on- Heterojunction Field-Effect resistance GaN PIN Rectifiers Grown 38 20 1 2014 6.