發光二極體～ 晶粒製程簡介 - een.ctu.edu.tw

1 Chen Chin-nanLLEEDD ( , ) (P ) (N ) Epitaxy(MOCVD)Active layer ( )P-cladding (P-type )N-cladding (N-type ) MOCVD Epi-wafer 100% ( / / BIN)( / )( / / )( )Sorting( ) LED / LED Q&A Al2O3 Al2O3 Al2O3 LED (MOCVD) 1. ( ) (1) (Trimethyl-Aluminum TMAl TMA)(2) (Ttrimethyl-Gallium TMGa TMG)(3) (Trimethyl-Indium TMIn TMI)2.

2 (NH3) 3. (1) n (Si) methyl silane MeSiH3 (2) p (Mg) biscyclopentadienyl (Cp2Mg) (MOCVD) LED 1 week2~3 weeks wafer N-type epiP-type epiN P LED 3. (ITO)4. (N )GaAs 1. N-type epiP-type ( )5. N-type epiP-type epiN N-type epiP-type epiN N-type epiP-type epiN 6. / N-type epiP-type epiN Ti/Al7. (P ) N-type epiP-type epiN P ( )10. ( )9. / 11. / ITOMASKUV / / LED 1 week3 weeks Sorting (Al2O3)N N-claddingP-claddingp-GaNITOP TCLcontact layer ( )ITO( )n-GaN p-GaNn-GaNSapphire1.

3 Epitaxy2. Nimask PR coating4. Photo Lithograph5. Ni etching6. PR remove7. Dry Etch8. Ni Remove9. TCL PR coating12. TCL etch13. PR remove14. PR coating11. Photo Lithograph15. Photo Lithograph16. N-metal N-metal lift-off18. PR coatingNiTCLN-metalPadSiO2PR LED (1/2) NiTCLN-metalPadSiO2PR19. Photo Lithograph20. Pad Pad lift-off22. SiO2 PR coating24. Photo Lithograph25. SiO2 etch26. PR remove27. 1% probing(Screening)27. 1% probing(Screening) (450 90 um) (450 90 um)29. 100% probing29. 100% probing30. Scriber&Breaker30.

4 Scriber&Breaker31. Sorting31. Sorting32. VI32. VI33. To warehouse(data verify) 33. To warehouse(data verify) LED (2/2) LED n-GaNn-AlGaN Cladding InGaN (MQL)p-AlGaN Claddingp-GaNNPN-type Buffer layerNi/Au ( ) NPcontact layer ( )ITO( ) Ti/Al nn--GanGan: : (( )) pp--GanGan: : (( )) ColorRedRedGreenGreenBlueBlueActive Layer MaterialsInAlGaPInAlGaAsInAlGaPInGaNInGa NSubstrate MaterialsGaAsGaPSi(wafer bonding)SapphireSapphireChip ProcessLithography +Wafer bondingLithographyLithographyVender ( ), , , , Lumileds , ,Cree, , ,eLite, CreeLED