LED 製造技術 - een.ctu.edu.tw

LED LED LED 2o10o15o : epi-ready substrate SI 1. CZ (Si) (Ge) Li Nb ( Li Ta) ~ Li2CO3 Nb2O5(Ta2O5) Nb2O5(Ta2O5) 2.

2. 長晶棒段面切割與外徑研磨長成之單晶的兩端依需要的晶向切斷去除直徑不足之晶冠及晶尾，並利用研磨機以滾輪

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Transcription of LED 製造技術 - een.ctu.edu.tw

1 LED LED LED 2o10o15o : epi-ready substrate SI 1. CZ (Si) (Ge) Li Nb ( Li Ta) ~ Li2CO3 Nb2O5(Ta2O5) Nb2O5(Ta2O5) 2.

2 3. 4. 5. 6. SAW SAW( ,Surface Acoustic Wave) 7.

3 (wetchemical cleaning) 8. TTV LTV : PSS LED N GaN P GaN => , (AlxGa1-X) (Al,Ga,In,P ) ( ) ( )III V GaTMGAsAsH3 AlTMAPPH3 InTMIS ource LED LED (Epitaxy wafer) (Chip) PI 1.

4 MESA( ) 2. TCL( ) 3. PAD( ) 4. PASSIVATION( ) 1. 2. 3. 4. 5. PI LED LED Wafer