Fully-Differential Isolation Amplifier datasheet (Rev. A)

1 0 V250 V2 V2 V5 APRIL2011 REVISEDAUGUST2011 fully -DifferentialIsolationAmplifierChec kforSamples:AMC12001 FEATURESDESCRIPTIONTheAMC1200isa precisionisolationamplifierwith2 250-mVInputVoltageRangeOptimizedforanout putseparatedfromtheinputcircuitrybyaShun tResistorssilicondioxide(SiO2) barrierthatis highlyresistantto ,thisdevice LowHigh-SideSupplyCurrent:8 mAmaxatpreventsnoisecurrentsonahighcommo n-mode5 Vvoltagelinefromenteringthelocalgroundan d InputBandwidth:60kHzmininterferingwithor damagingsensitivecircuitry. FixedGain:8 ( )TheinputoftheAMC1200isoptimizedfordirec tconnectiontoshuntresistorsorotherlowvol tage HighCommon- CertifiedGalvanicIsolation:insystem-leve lpowersavingand,especiallyin UL1577andIEC60747-5-2 Approvedmotor-controlapplications, IsolationVoltage:4000 VPEAK automaticallyadjustedtoeitherthe3-Vor5-V WorkingVoltage:1200 VPEAKlow-sidesupply.

2 TransientImmunity:10kV/ s minTheAMC1200isfullyspecifiedovertheexte nded Typical10-YearLifespanatRatedWorkingindu strialtemperaturerangeof 40 Cto+105 CVoltage(seeApplicationReportSLLA197)and is availablein theSMD-type,gullwing-8package. FullySpecifiedOvertheExtendedIndustrialT emperatureRangeAPPLICATIONS ShuntResistorBasedCurrentSensingin: MotorControl GreenEnergy FrequencyInverters UninterruptiblePowerSupplies1 Pleasebeawarethatanimportantnoticeconcer ningavailability,standardwarranty,anduse in 2011, APRIL2011 , (1)Overtheoperatingambienttemperatureran ge, ,VDD1toGND1orVDD2toGND2 ,VINNGND1 + 10mAMaximumjunctiontemperature,TJMax+150 CHumanbodymodel(HBM)JEDEC standard22,testmethod (ESD)ratings,allpinsChargeddevicemodel(C DM)JEDEC standard22,testmethod 1000VC101(1) ,andfunctionaloperationofthedeviceatthes eoranyotherconditionsbeyondthoseindicate dis (1)DUB(SOP)UNITS8 PINS JCtopJunction-to-case(top) C/W JCbotJunction-to-case(bottom)thermalresi stanceN/A(1)

3 Formoreinformationabouttraditionalandnew thermalmetrics,seetheICPackageThermalMet ricsapplicationreport, :40016131 Filenumber:E1819742 Copyright 2011, APRIL2011 REVISEDAUGUST2011 IEC60747-5-2 INSULATIONCHARACTERISTICSO veroperatingfree-airtemperaturerange(unl essotherwisenoted).PARAMETERTESTCONDITIO NSVALUEUNITVIORMM aximumworkinginsulationvoltage1200 VPEAKQ ualificationtest:afterInput/OutputSafety TestSubgroup2/3 VPR= VIORMx ,t = 10s, partial1140 VPEAK discharge<5 pCQualificationtest:methoda,afterenviron mentaltestsVPRI nputtooutputtestvoltagesubgroup1,VPR= VIORMx ,t = 10s, partialdischarge1920 VPEAK<5 pC100%productiontest:methodb1,VPR= VIORMx ,2250 VPEAKt = 1 s, partialdischarge<5 pCVIOTMT ransientovervoltageQualificationtest:t = 60s4000 VPEAKQ ualificationtest:VTEST= VISO, t = 60s4000 VPEAKVISOI nsulationvoltageperUL100%productiontest.

4 VTEST= VISO, t = 1 s4800 VPEAKRSI nsulationresistanceVIO= 500V atTS>109 PDPollutiondegree2 IECSAFETYLIMITINGVALUESS afetylimitingintendstopreventpotentialda magetotheisolationbarrieruponfailureofin putoroutput(I/O) ,withoutcurrentlimiting,dissipatesuffici entpowertooverheatthedieanddamagetheisol ationbarrier, theoperatingvirtualjunctiontemperaturera ngespecifiedin theThermalInformationtableis thatofa deviceinstalledin theJESD51-3,LowEffectiveThermalConductiv ityTestBoardforLeadedSurfaceMountPackage sandis ,output,orsupplycurrent JA= 246 C/W,VIN= ,TJ= +150 C,TA= +25 C10mATCM aximumcasetemperature+150 s/50- s voltagesurgeand8- s/20- s currentsurge 6000 VIEC60664-1 RATINGSPARAMETERTESTCONDITIONSSPECIFICAT IONB asicisolationgroupMaterialgroupIIRatedma insvoltage 150 VRMSI-IVRatedmainsvoltage 300 VRMSI-IVInstallationclassificationRatedm ainsvoltage 400 VRMSI-IIIR atedmainsvoltage<600 VRMSI-IIIC opyright 2011,TexasInstrumentsIncorporated3 AMC1200 SBAS542A APRIL2011 (1)PARAMETERTESTCONDITIONSMINTYPMAXUNITS hortestterminaltoterminaldistanceL(I01)M inimumairgap(clearance)7mmthroughairShor testterminaltoterminaldistanceL(I02)Mini mumexternaltracking(creepage)

5 7mmacrossthepackagesurfaceTrackingresist anceCTIDINIEC60112/VDE0303part1 175V(comparativetrackingindex) (internalclearance)Inputtooutput,VIO= 500V,allpinsoneachsideofthebarriertiedto getherto>1012 createa two-terminaldevice,TA<+85 CRIOI solationresistanceInputtooutput,VIO= 500V,>1011 +85 C TA<TAmaxCIOB arriercapacitanceinputtooutputVI= MHz3pF(1)Creepageandclearancerequirement sshouldbeappliedaccordingtothespecificeq uipmentisolationstandardsofa (PCB) PCBbecomeequalaccordingtothemeasurementt echniquesshownin 40 C to+105 C andwithinthespecifiedvoltagerange, +25 C,VDD1= 5 V,andVDD2= VINN 320mVclippingDifferentialinputvoltageVIN P VINN 250+ + 10 +10 V/KVIN from0 V to5 V at0 Hz108dBCMRRC ommon-moderejectionratioVINfrom0 V to5 V Small-signalbandwidth60100kHzOUTPUTN ominalgain8 Initial,atTA= +25 C + 1 +1%TCGERRG ainerrorthermaldrift 56 VDD2 + VDD2 + VINN= 0 ,10-kHzripple80dBPSRRP ower-supplyrejectionratiovsVDD2,10-kHzri pple61 ,10%to90% s4 Copyright 2011, APRIL2011 REVISEDAUGUST2011 ELECTRICALCHARACTERISTICS(continued)

6 Allminimum/maximumspecificationsatTA= 40 C to+105 C andwithinthespecifiedvoltagerange, +25 C,VDD1= 5 V,andVDD2= ,50%to10%, ,50%to50%, ,50%to90%, sCommon-modetransientCMTIVCM= 1 kV1015kV/ VDD2 VDD2 <VDD2< <VDD2< <VDD2< <VDD2< (TOPVIEW)PINDESCRIPTIONSPIN#PINNAMEFUNCT IONDESCRIPTION1 VDD1 PowerHigh-sidepowersupply2 VINPA naloginputNoninvertinganaloginput3 VINNA naloginputInvertinganaloginput4 GND1 PowerHigh-sideanalogground5 GND2 PowerLow-sideanalogground6 VOUTNA nalogoutputInvertinganalogoutput7 VOUTPA nalogoutputNoninvertinganalogoutput8 VDD2 PowerLow-sidepowersupplyCopyright 2011,TexasInstrumentsIncorporated5 2 1 (V)Input Offset (mV) 2 1 (V)Input Offset (mV)VDD2 = V to V 2 1 (V)Input Offset (mV)VDD2 = V to V 2 1 40 25 105203550658095 110 125 Temperature ( C)Input Offset (mV) Frequency (kHz)CMRR (dB) 40 30 20 10010203040 400 300 200 1000100200300400 Input Voltage (mV)Input Current ( A)AMC1200 SBAS542A APRIL2011 VDD2= 5 V,VINP= 250mVto+250mV,andVINN= 0 V, 2011,TexasInstrumentsIncorporated6070809 0100110120 40 25 105203550658095 110 125 Temperature ( C)Input Bandwidth (kHz) 1 (V)Gain Error (%) 1 (V)Gain Error (%)VDD2 = V to V 1 (V)Gain Error (%)VDD2 = V to V 1 40 25 105203550658095 110 125 Temperature ( C)Gain Error (%)

7 80 70 60 50 40 30 20 10010110100500 Input Frequency (kHz)Normalized Gain (dB) APRIL2011 REVISEDAUGUST2011 TYPICALCHARACTERISTICS(continued)AtVDD1= VDD2= 5 V,VINP= 250mVto+250mV,andVINN= 0 V, 2011,TexasInstrumentsIncorporated7 360 330 300 270 240 210 180 150 120 90 60 3001101001000 Input Frequency (kHz)Output Phase ( ) 400 300 200 1000100200300400 Input Voltage (mV)Output Voltage (V) 400 300 200 1000100200300400 Input Voltage (mV)Output Voltage (V)VOUTPVOUTNVDD2 = V to V (V)Nonlinearity (%) (V)Nonlinearity (%)VDD2 = V to V (V)Nonlinearity (%)VDD2 = V to VAMC1200 SBAS542A APRIL2011 (continued)AtVDD1= VDD2= 5 V,VINP= 250mVto+250mV,andVINN= 0 V, 2011,TexasInstrumentsIncorporated 250 200 150 100 50050100 150 200 250 Input Voltage (mV)Nonlinearity (%)VDD2 = 3 VVDD2 = 5 V 40 25 105203550658095 110 125 Temperature ( C)Nonlinearity (%) (kHz)Noise (nV/sqrt(Hz))010203040506070809010011010 0 Ripple Frequency (kHz)PSRR (dB)VDD1 VDD2 Time (2 s/div)m200 mV/div500 mV/div500 mV/div012345678910 40 25 105203550658095 110 125 Temperature ( C)Output Rise/Fall Time ( s) APRIL2011 REVISEDAUGUST2011 TYPICALCHARACTERISTICS(continued)

8 AtVDD1= VDD2= 5 V,VINP= 250mVto+250mV,andVINN= 0 V, 2011,TexasInstrumentsIncorporated9012345 678910 40 25 105203550658095 110 125 Temperature ( C)Signal Delay ( s)50% to 10%50% to 50%50% to 90% (V)Output Common Mode Voltage (V)VDD2 risingVDD2 falling012345 40 25 105203550658095 110 125 Temperature ( C)Output Common Mode Voltage (V)VDD2 = V to VVDD2 = V to Voltage (V)Supply Current (mA) (V)IDD2 (mA)VDD2 = V to V012345678 40 25 105203550658095 110 125 Temperature ( C)Supply Current (mA)IDD1 IDD2 AMC1200 SBAS542A APRIL2011 (continued)AtVDD1= VDD2= 5 V,VINP= 250mVto+250mV,andVINN= 0 V, 2011,TexasInstrumentsIncorporatedS1S1C= 3pFINPC= 3pFINNVINNVINPVDD1 GND1 GND1 GND13pFR = 28kWIN3pFVINNVINPE quivalentCircuitR =INfC CLKDIFF1(= 10 MHz)fCLKC= + + APRIL2011 REVISEDAUGUST2011 THEORYOFOPERATIONINTRODUCTIONT hedifferentialanaloginputoftheAMC1200is a switched-capacitorcircuitbasedona second-ordermodulatorstagethatdigitizest heinputsignalintoa (VIN= VINP VINN)

9 , , + voltagedropacrossa ,therearetworestrictionsontheanaloginput signals, theinputvoltageexceedstherangeAGND toAVDD+ , ,thelinearityandthenoiseperformanceofthe deviceareensuredonlywhenthedifferentiala naloginputvoltageremainswithin highlevelofmagneticfieldimmunity,asdescr ibedinapplicationreportSLLA181,ISO72xDig italIsolatorMagnetic-FieldImmunity( ).Copyright 2011,TexasInstrumentsIncorporated11R212W R312 WRSHUNTAMC1200 GatedDriveCircuitTo LoadFloatingPower SupplyHV+IsolationBarrierC2(1)330pFC310p F(optional)VDD1 VINPVINNGND1 VDD2 VOUTPVOUTNGND2C410pF(optional)C1(1) (1) FmADCTMC320C/F28xxxAMC1200 SBAS542A APRIL2011 typicaloperationoftheAMC1200ina motor-controlapplicationisshowninFigure3 2.

10 Measurementofthemotorphasecurrentisdonet hroughtheshuntresistor,RSHUNT(inthiscase ,a two-terminalshunt).Forbetterperformance, thedifferentialsignalis filteredusingRCfilters(componentsR2, R3, andC2). Optionally, ,careshouldbetakenwhenchoosingthequality ofthesecapacitors;mismatchin valuesofthesecapacitorsleadstoa common-modeerrorattheinputofthemodulator .(1) (VDD1)is ,a Zenerdiodecanbeusedtolimitthevoltageto5 V 10%.A F (C1inFigure32) betterfilteringis required,anadditional1- F to10- F (GND1)isderivedfromtheendoftheshuntresis tor,whichisconnectedtothenegativeinputof theAMC1200(VINN).If a four-terminalshuntis used,theinputsofAMC1200areconnectedtothe innerleads,whileGND1is (ADC) , it is 2011,TexasInstrumentsIncorporatedTop ViewClearance free of anyconductive layer; copper pour and tracesHigh-side areaController-side areaViaTo ShuntTo Filter or FSMD1206m330 pFSMD060312 SMD 0603W12 SMD APRIL2011 ,thedistancebetweenthehigh-sideground(GN D1)andthelow-sideground(GND2)shouldbekep tatmaximum;thatis, 2011,TexasInstrumentsIncorporated1