Transcription of IS31AP2005 - ISSI
1 IS31AP2005 . MONO FILTER-LESS CLASS-D AUDIO POWER amplifier . September 2015. GENERAL DESCRIPTION FEATURES. The IS31AP2005 is a high efficiency, mono 5V supply at THD = 10%. Class-D audio power amplifier . A low noise, filter-less - into 4 (Typ.). PWM architecture eliminates the output filter, reducing - into 8 (Typ.). external component count, system cost, and Efficiency at 5V: simplifying design. - 83% at 400mW with a 4 speaker Operating in a single 5V supply, IS31AP2005 is - 89% at 400mW with an 8 speaker capable of driving 4 speaker load at a continuous Optimized PWM output stage eliminates LC. average output of with 10% THD+N.
2 The output filter IS31AP2005 has high efficiency with speaker load Fully differential design reduces RF rectification compared to a typical Class-AB amplifier . and eliminates bypass capacitor In cellular handsets, the earpiece, speaker phone, and Integrated pop-and-click suppression circuitry melody ringer can each be driven by the IS31AP2005 . Short-circuit and thermal protect The gain of IS31AP2005 is externally configurable 3mm 3mm DFN-8, MSOP-8 and SOP-8. which allows independent gain control from multiple packages sources by summing signals from each function. RoHS compliant and 100% lead(Pb)-free The IS31AP2005 is available in DFN-8 (3mm 3mm), MSOP-8 and SOP-8 packages.
3 APPLICATIONS. Wireless or cellular handsets and PDAs Portable DVD player Notebook PC. Portable radio Educational toys USB speakers Portable gaming TYPICAL APPLICATION CIRCUIT. Figure 1 Typical Application Circuit with Differential Input Integrated Silicon Solution, Inc. 1. Rev. C, 08/31/2015. IS31AP2005 . Figure 2 Typical Application Schematic with Single-ended Input Integrated Silicon Solution, Inc. 2. Rev. C, 08/31/2015. IS31AP2005 . PIN CONFIGURATION. Package Pin Configuration (Top view). DFN-8. MSOP-8. SOP-8. PIN DESCRIPTION. No. MSOP-8 Pin Description DFN-8. SOP-8. 1 SDB Shutdown terminal, active low logic.
4 2 NC No internal connection. 3 IN+ Positive differential input. 4 IN- Negative differential input. 5 OUT+ Positive BTL output. 6 VCC Power supply. 7 GND High-current ground. 8 OUT- Negative BTL output. - Thermal Pad Connect to GND. Integrated Silicon Solution, Inc. 3. Rev. C, 08/31/2015. IS31AP2005 . ORDERING INFORMATION. Industrial Range: -40 C to +85 C. Order Part No. Package QTY/Reel IS31AP2005 -DLS2-TR DFN-8, Lead-free IS31AP2005 -SLS2-TR MSOP-8, Lead-free 2500. IS31AP2005 -GRLS2-TR SOP-8, Lead-free Copyright 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice.
5 ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc.
6 Receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. 4. Rev. C, 08/31/2015. IS31AP2005 . ABSOLUTE MAXIMUM RATINGS. Supply voltage, VCC ~ + Voltage at any input pin ~ VCC+ Maximum junction temperature, TJMAX 150 C. Storage temperature range, TSTG -65 C ~ +150 C. Operating temperature range, TA 40 C ~ +85 C. ESD (HBM) 7kV. ESD (CDM) 500V. Note: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
7 These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS. VCC = ~ , TA = 25 C, unless otherwise noted. (Note 1). Symbol Parameter Condition Min. Typ. Max. Unit VCC Supply voltage V. Output offset voltage |VOS| VSDB = 0V, AV = 2V/V 10 mV. (measured differentially). VCC = , no load ICC Quiescent current mA. VCC = , no load ISD Shutdown current VSDB = 1 A.
8 FSW Switching frequency 250 kHz RIN Input resistor Gain 20V/V 15 k . Gain Audio input gain RIN = 150k 2 V/V. VIH High-level input voltage V. VIL Low-level input voltage V. Integrated Silicon Solution, Inc. 5. Rev. C, 08/31/2015. IS31AP2005 . ELECTRICAL CHARACTERISTICS. TA = 25 C, Gain= 2V/V. (Note 2). Symbol Parameter Condition Min. Typ. Max. Unit VCC = THD+N = 10%. VCC = W. f = 1kHz, RL = 8 . VCC = VCC = THD+N = 10%. VCC = W. f = 1kHz, RL = 4 . VCC = PO Output power VCC = THD+N = 1%. VCC = W. f = 1kHz, RL = 8 . VCC = VCC = THD+N=1%. VCC = W. f = 1kHz, RL = 4 . VCC = Total harmonic VCC = , PO = , RL = 8 , f = 1kHz THD+N %.
9 Distortion plus noise VCC = , PO = , RL = 4 , f = 1kHz VCC = ~5V, f =20Hz to 20kHz, inputs VNO Output voltage noise 68 Vrms ac-grounded with CIN = 1 F A-Weighting Wake-up time from tWU VCC = 36 ms shutdown SNR Signal-to-noise ratio PO = , RL = 8 , VCC = 92 dB. Power supply PSRR VCC = ~ , f = 217kHz -65 dB. rejection ratio Note 1: All parts are production tested at TA = 25 C. Other temperature limits are guaranteed by design. Note 2: Guaranteed by design. Integrated Silicon Solution, Inc. 6. Rev. C, 08/31/2015. IS31AP2005 . TYPICAL PERFORMANCE CHARACTERISTICS. 20 20. RL = 8 +33 H RL = 4 +33 H. 10 f = 1kHz 10 f = 1kHz VCC = 5 VCC = 5.
10 THD+N(%). THD+N(%). 2 2. VCC = VCC = 1 1. VCC = VCC = 10m 20m 50m 100m 200m 500m 1 2 3 10m 20m 50m 100m 200m 500m 1 2 3 4. Output Power(W) Output Power(W). Figure 3 THD+N vs. Output Power Figure 4 THD+N vs. Output Power 20 20. RL = 8 +33 H 10 RL = 4 +33 H. 10. VCC = 2 2. PO = THD+N(%). THD+N(%). VCC = 1. 1 PO = 1W. VCC = VCC = PO = 650mW. PO = 500mW. 20 50 100 200 500 1k 2k 5k 10k 20k 20 50 100 200 500 1k 2k 5k 10k 20k Frequency(Hz) Frequency(Hz). Figure 5 THD+N vs. Frequency Figure 6 THD+N vs. Frequency 200 0. VCC = ~ VCC = ~ RL = 8 +33 H RL = 8 +33 H. -20 Input Grounded 100. Output Voltage(uV). PSRR(dB).
