High Current Density Surface Mount Schottky Rectifier

1 SSC53L, General Semiconductor Revision: 28-Apr-141 Document Number: 88885 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Current Density Surface Mount Schottky RectifierFEATURES Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Very low forward voltage drop high surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified Material categorization: For definitions of compliance please see TYPICAL APPLICATIONSFor use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection DATACase.

2 DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified ( _X denotes revision code A, B, ..)Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker testPolarity: Color band denotes the cathode endPRIMARY CHARACTERISTICSIF(AV) AVRRM30 V, 40 VIFSM175 V, VTJ CPackageDO-214AB (SMC)Diode variationsSingleDO-214AB (SMC)MAXIMUM RATINGS (TA = 25 C unless otherwise noted)PARAMETERSYMBOLSSC53 LSSC54 UNITD evice marking code53LS54 Maximum repetitive peak reverse voltageVRRM3040 VMaximum RMS voltageVRMS2128 VMaximum DC blocking voltageVDC3040 VMaximum average forward rectified Current at TL (fig.)

3 1)IF(AV) forward surge Current ms single half sine-wave superimposed on rated loadIFSM175 AVoltage rate of change (rated VR)dV/dt10 000V/ sOperating junction temperature rangeTJ-65 to +150 CStorage temperature rangeTSTG-65 to +150 CSSC53L, General Semiconductor Revision: 28-Apr-142 Document Number: 88885 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Pulse test: 300 s pulse width, 1 % duty cycle(2)Pulse test: Pulse width 40 msNote(1)Aluminum substrate mountedNote(1)AEC-Q101 qualifiedRATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Fig.

4 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge CurrentELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERTEST instantaneous forward voltage (1) ATJ = 25 = 125 reverse Current at rated VR (2)TJ = 25 = 125 C45654060 THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERSYMBOLSSC53 LSSC54 UNITT ypical thermal resistance (1)R JA60 C/WR JL20 ORDERING INFORMATION (Example)PREFERRED P/NUNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODESSC53L-E3 " diameter plastic tape and reelSSC53L-E3 " diameter plastic tape and reelSSC53 LHE3_A/H (1) " diameter plastic tape and reelSSC53 LHE3_A/I (1)

5 " diameter plastic tape and reel01234560255075100125150 Average Forward Current (A)Lead Temperature ( C)SSC53 LSSC54110100050150100200 Number of Cycles at 60 HzPeak Forward Surge Current (A)SSC53L, General Semiconductor Revision: 28-Apr-143 Document Number: 88885 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics Fig. 5 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Forward Voltage (V)Instantaneous Forward Current (A)SSC53 LSSC54TJ = 150 CTJ = 125 CTJ = 25 Reverse Current (mA)Percent of Rated Peak Reverse Voltage (%)SSC53 LSSC54TJ = 150 CTJ = 125 CTJ = 25 CReverse Voltage (V)110100100010 000100 SSC53 LSSC54 Junction Capacitance (pF)TJ = 25 Cf = MHzVsig = 50 mVp-pCathode BandDO-214AB (SMC) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )0 (0) ( ) ( ) ( ) ( ) ( ) ( )Mounting Pad ( ) ( ) ( ) ( ) Disclaimer Revision: 08-Feb-171 Document Number.

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