Transcription of LONGi P-type Monocrystalline Wafer Specification
1 LONGi P-type Monocrystalline Wafer Specification P ( ) LONGi P-type Monocrystalline Wafer Specification P ( ) 1 Material properties Property Specification Inspection Method Growth method CZ -- Crystallinity Monocrystalline Preferential Etch Techniques ASTM F47-88 Conductivity type P-type P Napson EC-80 TPN P/N Dopant Gallium -- Oxygen concentration [Oi] 8E + 17 at/cm3 FTIR (ASTM F121-83) Carbon Concentration [Cs] 5E + 16 at/ cm3 FTIR ASTM F123-91 Etch pit density (dislocation density) 500 cm-2 Preferential Etch Techniques ASTM F47-88 Surface orientation <100> 3 X-ray Diffraction Method ASTM F26-1987 X Orientation of pseudo square sides <010>, <001> 3 X-ray Diffraction Method ASTM F26-1987 X LONGi P-type Monocrystalline Wafer Specification P ( ) 2 Electrical properties Property Specification Inspection Method Resistivity.
2 Cm Wafer inspection system MCLT Minority carrier lifetime 50 s Sinton BCT-400 QSSPC /Transient (with injection level: 1E15 cm-3) 3 Geometry Property Specification Inspection Method Geometry Pseudo square -- Bevel edge shape Round -- Wafer Side length 182 mm Wafer inspection system Wafer Diameter 247 mm Wafer inspection system Angle between adjacent sides 90 Wafer inspection system Thickness 165 20/ 10 m 160 20/ 10 m 155 20/ 10 m 150 10/ 10 m Other Wafer inspection system TTV (Total thickness variation) 27 m Wafer inspection system LONGi P-type Monocrystalline Wafer Specification P ( ) 4 Surface properties Property Specification Inspection Method Cutting method DW -- Surface quality as cut and cleaned, no visible contamination, (oil or grease, finger prints, spot stains, epoxy/glue residue are not allowed) Wafer inspection system Saw marks 15 m Wafer inspection system Bow 40 m Wafer inspection system Warp 40 m Wafer inspection system Chip depth and length Max 1/pcs; no V-chip ; 1 ; V Naked eyes or Wafer inspection system Micro cracks / holes / Not allowed Wafer inspection system Size M10 A 182 B 247 C D 90
