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1 1 Improved Resolution of Thick Film Resist (Effect of Development Technique) Yoshihisa Sensu, Atsushi Sekiguchi and Yasuhiro Miyake Litho Tech Japan Corporation 2-6-6 Namiki, Kawaguchi, Saitama, 332-0034, Japan 2 (DNQ) Si 24 Q4000 N2 MEMS(Micro Electro Mechanical Syatems) TAB(Tape Bonding) COG(Chip On Glass) CSP(Chip Scale Package)

2 [1] IC [2] [3] Q4000[4] RDA[5] SOLID-C[6] N2 3 2. (DNQ) N2 N2 N2 N2 N2 N2 (1)

3 Q4000 Q4000 [4] RDA[5] SOLID-C[6] Litho Spin Cup[4] C ( ) Si 24 m 110 C 7 15 C 30 [3] (2) Dipping Development ( DD ) (a) Step Puddle Development ( SP ) (b) 100rpm 5 295 3 Vibration Development ( VD ) 4 (c) 50Hz 50 m Reverse Development ( RD ) (d) (3)

4 Q4000 Quintel TMAH ( )23 C 15 10 m (Line Space 1 1) i 10 m 1 1 (Eop) (4) RDA[5] 950nm Q4000 TMAH SOLID-C[6] [7] 1 1 10 m (Line Space 1 1) 10 m 1 1 (Eop) (5) 13 C 35 C N2 N2 [8] (6) 23 C 3.

5 SP m VD m DD m RD m SP 4 5 SP VD DD RD RD SP VD DD RD [9]( : tan ) (Eth) tan SP VD DD RD 15 SP VD DD RD tan 15 (Eth) SP VD DD RD SP 4.

6 SP VD DD RD SP VD DD RD SP R(E) R E SP VD DD RD 350mJ/cm2 700mJ/cm2 (Activation energy) Frequency factor Kd [10] 2lnRTEdTkdd= (1) 6 E (kcal/mol) T (K) Kd (S-1) 350mJ/cm2 SP VD DD RD SP VD DD RD N2 RD DD ) N2 N2 RD N2 SP VD N2 (Eth) 350mJ/cm2 N2 SP VD DD RD ( )

7 N2 DD RD SP RD ( ) N2 N2 700mJ/cm2 DD VD N2 N2 N2 N2 N2 N2 [8] Z Z0 e(-E/RT) 23 C 1ml N2 = ==RTNn (2) N Avo ga d ro R (l atm/deg mol) T K 1sec N2 Z0 =MRTnZ (3) n 1ml N2 N2 (cm) M N2 7 Z RTEeZZ =0 (4) E (kcal/mol)

8 N2 350mJ/cm2 SP 106molecule/sec VD 1020molecule/sec DD 1025molecule/sec RD 1027molecule/sec N2 N2 350mJ/cm2 700 J/cm2 350mJ/cm2 N2 SP VD SP SP VD SP N2 5.

9 SP VD DD RD N2 N2 N2 N2 (SP VD ) (DD RD N2 N2 8 N2 ( ) Q4000 Quintel Jeffrey Lane SIGMA-C Dr.)

10 Christian K. Kalis [1] R. Arai, "Exposure machine for the magnetic head, " Electric Parts and Materials, pp. 84-89, Feb. 2000. [2] Y. Shibayama, and M. Saito, " Influence of Water on Photochemical Reaction of Positive-Type Photoresist, " J. Appl. Phys. , , pp. 2152-2155, Oct. 1990. [3] , , , " , " (C), vol. J85-C, no. 4, pp. 260-268, Apr. 2002. [4] Y. Sensu, A. Sekiguchi, and Y. Miyake, : Improved Resolution of Thick Film Resist (Effect of Development Technique), Proc. SPIE, vol. 4690, pp. 861-882, Mar. 2002. [5] A. Sekiguchi, C. A. Mack, Y. Minami, and T. Matsuzawa, " Resist Metrology for Lithography Simulation, Part 2 : Development Parameter Measurements, " Proc.