MwT-4MwT-4 - Microwave Technology

1 MwT-4. 26 GHz Low Noise GaAs FET. DOWNLOAD ADDITIONAL DATA CHIP THICKNESS = 125 All Dimensions in Microns 50. FEATURES. dB NOISE FIGURE AT 12 GHz 75 HIGH ASSOCIATED GAIN. 241. MICRON REFRACTORY METAL/GOLD GATE. 84 180 MICRON GATE WIDTH. CHOICE OF CHIP AND TWO PACKAGE TYPES. 84 50 84. 356. DESCRIPTION. The MwT-4 is a GaAs MESFET device whose nominal quarter-micron gate length and 180 micron gate width make it ideally suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range. The straight geometry of the MwT-4 makes it equally effective for either wideband ( 6 to 18 GHz) or narrow-band applications. The chip is produced using MwT's reliable metal system and devices from each wafer are screened to insure reliability.

2 All chips are passivated using MwT's patented Diamond-Like Carbon process for increased durability, Designers can use MwT's unique BIN selection feature to choose devices from narrow Idss ranges, insuring consistent circuit operation. DC SPECIFICATIONS AT Ta = 25 C RF SPECIFICATIONS AT Ta = 25 C. SYMBOL PARAM. & CONDITIONS UNITS MIN TYP MAX SYMBOL PARAMETERS AND CONDITIONS FREQ UNITS MIN TYP. Saturated Drain Current P1dB Output Power at 1 dB Compression 12 GHz dBm IDSS mA 18 66. Vds= V VGS= V VDS= V IDS= x IDSS. Gm Transconductance mS 27 35 Small Signal Gain SSG 12 GHz dB Vds= V VGS= V VDS= V IDS= x IDSS. Vp Pinch-off Voltage V Optimum Noise Figure Vds= V IDS= mA NFopt 12 GHz dB VDS= IDS= 10mA. Gate-to-Source Breakdown Volt.

3 BVGSO V Igs= mA GA Gain at Optimum Noise Figure 12 GHz dB Gate-to-Drain Breakdown Volt. VDS= IDS= 10mA. BVGDO V Igd= mA Recommended IDSS Range 24- IDSS mA. Rth Thermal MwT-4 Chip, C/W 250 for Optimum P1dB 51. Resistance MwT-470, 473 460*. *Overall Rth depends on case mounting. DEVICE EQUIVALENT CIRCUIT MODEL PARAMETER VALUE. Lg Rg Cgd Rd Ld Source Resistance Rs . Source Inductance Ls nH. GATE Cgs DRAIN Drain-Source Resistance Rds 283 . Rds Drain-Source Capacitance Cds pF. gm Cds Cpg Ri tau Cpd Drain Resistance Rd . Drain Pad Capacitance Cpd pF. Drain Inductance Ld nH. Rs Gate Bond Wire Inductance Lg nH. Gate Pad Capacitance Cpg pF. Ls Gate Resistance Rg . Gate-Source Capacitance Cgs pF. Channel Resistance Ri . SOURCE.

4 Gate-Drain Capacitance Cgd pF. Transconductance gm mS. Transit Time tau psec ORDERING INFORMATION. Chip MwT-4 NOTE: Package 71 MwT-471 For Package information, please see supplimentary application note from our website at Package 73 MwT-473 When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required. 4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208. All rights reserved. Microwave Technology , Inc. All specifications subject to change without notice. MwT-4. 26 GHz Low Noise GaAs FET. MwT-4 MwT-4. DUAL BIAS OPTIONAL BONDING. Output Reference 50 Output Output Reference 50 Output Plane Microstrip Plane Microstrip 19 Mils Long 2 Mils 19 Mils Long 2 Mils Copper Heat Sink Copper Heat Sink 5 Mils Below Level of 5 Mils Below Level of Microstrip Microstrip FP4.

5 20 Mils MwT FP4. 20 Mils MwT. 7 Mils Long 2 Mils Gold Ridge 7 Mils Long 2 Mils Gold Ridge 10x 10x 5 Mils 10x 10x 5 For 50 Input (2 each) 50 Input All Bond Dual Bias, or Input Reference Microstrip Input Reference Microstrip All Bond Wires are 25pF Caps for Plane Plane Wires are Single Bias Mil Diameter Mil Diameter (2 each). Absolute Maximum Continuous Maximum SAFE OPERATING LIMITS vs. BACKSIDE CHIP. MAXIMUM RATINGS AT Ta = 25 C. 150 125 100 C or Lower SYMBOL PARAMETER UNITS CONT MAX1 ABSOLUTE MAX2. 100 C or Lower Ids (mA). 125 VDS Drain to Source Voltage V See Safe Operating Limits Tch Channel Temperature C +150 +175. Tst Storage Temperature C -65 to +150 +175. Pin RF Input Power mW 55 85. NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the mean-time-to-failure below the design goals.

6 0 2. Exceeding any one of these limits may cause permanent damage. 0 2 4 6 8. Vds (V). TYPICAL NOISE PARAMETERS NOISE FIGURE AND. MwT-4LN Chip: VDS= IDS= 10mA ASSOCIATED GAIN VS. FREQUENCY. FREQUENCY NF MIN GAMMA OPT. Associated Gain (dB). Rn/50. GHz dB MAG ANGLE NFopt (dB). 48 1 2 3 4 6 8 12 20. Frequency (GHz). BIN ACCURACY STATEMENT. When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required. 4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208. All rights reserved. Microwave Technology , Inc. All specifications subject to change without notice.