Optocoupler, Phototransistor Output, with Base Connection

1 4N35-X, 4N36-X, 4N37-X, 4N38. vishay Semiconductors optocoupler , Phototransistor output , with base Connection FEATURES. Isolation test voltage 5000 VRMS. Interfaces with common logic families A 1 6 B Input- output coupling capacitance < pF. Industry standard dual-in-line 6 pin package C 2 5 C. Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC. NC 3 4 E. APPLICATIONS. AC mains detection i179004-14 Reed relay driving DESCRIPTION Switch mode power supply feedback This datasheet presents five families of vishay industry Telephone ring detection standard single channel Phototransistor couplers. These families include the 4N35, 4N36, 4N37, 4N38 couplers. Logic ground isolation Each optocoupler consists of gallium arsenide infrared LED Logic coupling with high frequency noise rejection and a silicon NPN Phototransistor . These couplers are Underwriters Laboratories (UL) listed to AGENCY APPROVALS. comply with a 5000 VRMS isolation test voltage. UL file no. E52744 (pending).

2 This isolation performance is accomplished through vishay cUL tested to CSA bulletin 5A. double molding isolation manufacturing process. Comliance to DIN EN 60747-5-5 partial discharge isolation specification DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5. is available for these families by ordering option 1. (pending), available with option 1. These isolation processes and the vishay ISO9001 quality BSI: EN 60065, EN 60950-1. program results in the highest isolation performance available FIMKO. for a commecial plastic Phototransistor optocoupler . CQC. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. Note For additional design information see application note 45. normalized curves ORDERING INFORMATION. DIP-6 Option 6. 4 N 3 x - X 0 # # T. mm mm PART NUMBER PACKAGE OPTION TAPE. AND Option 7 Option 9. REEL. > 8 mm 8 mm typ. CTR (%). AGENCY CERTIFIED/PACKAGE. 10 mA 20 mA.

3 UL, cUL, BSI, FIMKO 100 20. DIP-6 4N35-X000 4N36-X000 4N37-X000 4N38. DIP-6, 400 mil, option 6 4N35-X006 - 4N37-X006 - SMD-6, option 7 4N35-X007T (1) 4N36-X007 4N37-X007 4N38-X007T (1). SMD-6, option 9 4N35-X009T (1) 4N36-X009T (1) 4N37-X009 4N38-X009T. VDE, UL, cUL, BSI, FIMKO 100 20. DIP-6 4N35-X001 - 4N37-X001 - DIP-6, 400 mil, option 6 4N35-X016 - - - SMD-6, option 7 4N35-X017T (1) - - - SMD-6, option 9 4N35-X019T - - - Notes Additional options may be possible, please contact sales office. (1) Also available in tubes; do not put T on end. Rev. , 16-Jan-12 1 Document Number: 83717. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 4N35-X, 4N36-X, 4N37-X, 4N38. vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified). PARAMETER TEST CONDITION SYMBOL VALUE UNIT. INPUT. Reverse voltage VR 6 V. Forward current IF 60 mA.

4 Surge current t 10 s IFSM A. Power dissipation Pdiss 70 mW. output . Collector emitter breakdown voltage VCEO 70 V. Emitter base breakdown voltage VEBO 7 V. Collector current IC 50 mA. Collector peak current tp/T = , tp 10 ms ICM 100 mA. output power dissipation Pdiss 150 mW. COUPLER. Isolation test voltage t=1s VISO 5000 VRMS. Creepage distance 7 mm Clearance distance 7 mm Isolation thickness between emitter mm and detector Comparative tracking index DIN IEC 112/VDE 0303, part 1 175. VIO = 500 V, Tamb = 25 C RIO 1012 . Isolation resistance VIO = 500 V, Tamb = 100 C RIO 1011 . Storage temperature Tstg - 55 to + 150 C. Operating temperature Tamb - 55 to + 100 C. Soldering temperature (1) 2 mm from case, 10 s Tsld 260 C. Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.

5 (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified). PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT. INPUT. IF = 10 mA VF V. Forward voltage (1). IF = 10 mA, Tamb = - 55 C VF V. Reverse current (1) VR = 6 V IR 10 A. Capacitance VR = 0 V, f = 1 MHz CO 25 pF. output . 4N35 BVCEO 30 V. Collector emitter breakdown 4N36 BVCEO 30 V. IC = 1 mA. voltage (1) 4N37 BVCEO 30 V. 4N38 BVCEO 80 V. Emitter collector breakdown IE = 100 A BVECO 7 V. voltage (1). 4N35 BVCBO 70 V. Collector base breakdown 4N36 BVCBO 70 V. IC = 100 A, IB = 1 A. voltage (1) 4N37 BVCBO 70 V. 4N38 BVCBO 80 V. Rev. , 16-Jan-12 2 Document Number: 83717. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 4N35-X, 4N36-X, 4N37-X, 4N38.

6 vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified). PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT. output . VCE = 10 V, IF = 0 4N35 ICEO 5 50 nA. 4N36 ICEO 5 50 nA. VCE = 10 V, IF = 0 4N37 ICEO 5 50 nA. VCE = 60 V, IF = 0 4N38 ICEO 50 nA. Collector emitter leakage current (1) 4N35 ICEO 500 A. VCE = 30 V, IF = 0, 4N36 ICEO 500 A. Tamb = 100 C. 4N37 ICEO 500 A. VCE = 60 V, IF = 0, 4N38 ICEO 6 A. Tamb = 100 C. Collector emitter capacitance VCE = 0 CCE 6 pF. coupler Resistance, input output (1) VIO = 500 V RIO 1011 . Capacitance, input output f = 1 MHz CIO pF. Notes Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (1) Indicates JEDEC registered value. CURRENT TRANSFER RATIO (Tamb = 25 C, unless otherwise specified). PARAMETER TEST CONDITION PART SYMBOL MIN.

7 TYP. MAX. UNIT. 4N35 CTRDC 100 %. VCE = 10 V, IF = 10 mA 4N36 CTRDC 100 %. 4N37 CTRDC 100 %. VCE = 10 V, IF = 20 mA 4N38 CTRDC 20 %. IC/IF (1). 4N35 CTRDC 40 50 %. VCE = 10 V, IF = 10 mA, 4N36 CTRDC 40 50 %. TA = - 55 C to + 100 C 4N37 CTRDC 40 50 %. 4N38 CTRDC 30 %. Note (1) Indicates JEDEC registered values. SWITCHING CHARACTERISTICS (Tamb = 25 C, unless otherwise specified). PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT. Turn-on time (1) VCC = 5 V, IC = 2 mA, RL = 100 ton 10 s Turn-off time (1) VCC = 5 V, IC = 2 mA, RL = 100 toff 10 s Note (1) Indicates JEDEC registered values. IF IF +5V IF. 0. 0. tp t IC. 100 %. R G = 50 90 %. tp = T. t p = 50 s Channel I 10 %. Oscilloscope 0. tr R L = 1 M td tf t Channel II ts C L = 20 pF t on t off 50 RL tp Pulse duration ts Storage time td Delay time tf Fall time tr Rise time t off (= ts + tf) Turn-off time 95 10804-3 t on (= td + tr) Turn-on time 96 11698. Fig. 1 - Test Circuit, Non-Saturated Operation Fig. 2 - Switching Times Rev.

8 , 16-Jan-12 3 Document Number: 83717. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 4N35-X, 4N36-X, 4N37-X, 4N38. vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified). 10 000. IF = 0 mA. Tamb = 0 C 1000. ICE0 - Leakage Current (nA). VF - Forward Voltage (V). Tamb = - 25 C VCE = 40 V. 100. Tamb = - 40 C. T = - 55 C 10 VCE = 24 V. amb 1 VCE = 12 V. Tamb = 25 C. Tamb = 50 C Tamb = 75 C. Tamb = 100 C. 1 10 100 - 60 - 40 - 20 0 20 40 60 80 100. IF - Forward Current (mA) Tamb - Ambient Temperature ( C). Fig. 3 - Forward Voltage vs. Forward Current Fig. 6 - Leakage Current vs. Ambient Temperature 60 VCE = 5 V. IF = 10 mA. IF = 30 mA CTRNorm - Normalized CTR (NS). 50 IC - Collector Current (mA). IF = 5 mA. 40 IF = 20 mA. 30 IF = 15 mA. IF = 1 mA. 20 IF = 10 mA. 10 IF = 5 mA 0 0. 0 1 2 3 4 5 6 7 8 - 60 - 40 - 20 0 20 40 60 80 100.

9 VCE - Collector Emitter Voltage (NS) (V) Tamb - Ambient Temperature ( C). Fig. 4 - Collector Current vs. Collector Emitter Voltage (NS) Fig. 7 - Normalized CTR (NS) vs. Ambient Temperature 25 IF = 25 mA VCE = V. IF = 10 mA. CTRNorm - Normalized CTR (sat). IC - Collector Current (mA). 20. IF = 5 mA. 15. IF = 10 mA 10 IF = 1 mA. IF = 5 mA. 5. IF = 1 mA IF = 2 mA. 0 0. 0 - 60 - 40 - 20 0 20 40 60 80 100. VCE - Collector Emitter Voltage (sat) (V) Tamb - Ambient Temperature ( C). Fig. 5 - Collector Current vs. Collector Emitter Voltage (sat) Fig. 8 - Normalized CTR (sat) vs. Ambient Temperature Rev. , 16-Jan-12 4 Document Number: 83717. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 4N35-X, 4N36-X, 4N37-X, 4N38. vishay Semiconductors 1000. VCE = 5 V VCC = 5 V. CTRNorm - Normalized CTR (NS). fCTR - CTR Frequency (kHz). Tamb = 25 C. Tamb = 0 C. Tamb = - 40 C 100.

10 Tamb = - 55 C. Tamb = 50 C 10. Tamb = 75 C. Tamb = 100 C. 0 1. 1 10 100 1 10 100. IF - Forward Current (mA) IC - Collector Current (mA). Fig. 9 - Normalized CTR (NS) vs. Forward Current Fig. 12 - CTR Frequency vs. Collector Current 1000. VCE = V VCE = 5 V, IF = 10 mA. CTRNorm - Normalized CTR (sat). toff ton, toff - Switching Time ( s). Tamb = 25 C. Tamb = 0 C 100. Tamb = - 40 C. Tamb = - 55 C. 10. ton Tamb = 50 C. Tamb = 75 C 1. Tamb = 100 C. 0 1 10 100 1 10 100. IF - Forward Current (mA) RL - Load Resistance (k ). Fig. 10 - Normalized CTR (sat) vs. Forward Current Fig. 13 - Switching Time vs. Load Resistance 0. VCE = 5 V. - 20. - 40. Phase (deg). - 60. - 80. - 100. - 120. - 140. - 160. 1 10 100 1000. f - Frequency (kHz). Fig. 11 - CTR Frequency vs. Phase Angle Rev. , 16-Jan-12 5 Document Number: 83717. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 4N35-X, 4N36-X, 4N37-X, 4N38.