Positive Tone Photosensitive Polyimide …

1 TORAY Industries, Tone Photosensitive PolyimidePositive Tone Photosensitive Polyimide PhotoneecePhotoneece PWPW--1200 series1200 seriesIntroduction of PW series+Photosensitivity+High Tg+ chemical ResistanceNon- Photosensitive PolyimidePW-1000 seriesPW-1000 seriesPW-1200 seriesPW-1200 seriesPositive Photosensitive PolyimideCoating PW seriesPositive Photosensitive PolyimideCoating PW seriesPW1200 seriesis the improved gradefor multi-layer and bump process buffer coat use+Photolithography +Alkaline DevelopabilityPW-1200 series are Positive tone Photosensitive Polyimide coatings with high glass transition temperature, high chemical resistance, and the following of PW-1200 series(1 Good Film Performance(2) Wide Cure Process Window 3 Good Photolithographic Performance 4 Good Solution Stability 5 Thick Film ApplicableComparison of Film Performance of PW-1000 with PW-1200 Tensile Strength Elongation Young s Modulus 140 MPa 15% PropertiesThermalProperties 5% Weight Loss Temperature 1% Weight Loss Temperature Tg (TMA) 356oC 309oC 230oCPW-1200250 C 1320 C 1 146 MPa 20% 435oC 390oC 305oCPW-1000250 C 1320 C 1 Curing ConditionPSPI nameImpossibleto measure 130 MPa 30% 328oC 302oC Impossibleto measure 458oC 395oC 270oCFilm Performance of PW-1200 Tensile Strength Elongation Young s Modulus 140 MPa 15% PropertiesThermalProperties 5% Weight Loss Temperature 1% Weight Loss Temperature Tg (TMA))

2 356oC 309oC 230oCPW-1200250 C 1h 320 C 1h 146 MPa 20% 435oC 390oC 305oC350 C 1h400 C ConditionPSPI name 455oC 400oC 305oC 140 MPa 10% 485oC 426oC 305oC 149 MPa 20% C 1h 475oC 418oC 305oC 140 MPa 20% C 140 MPa 10% 527oC 465oC 310oCResist strippercure condition400 C 30min N2)PIinitial KOH Swelling) 0(Dissolved) conditionthickness( m)96 C 40minSolvent resistancesolventPW-1000 PW-1200ethyl lactate30s butyl acetate30s PGMEA120s 25%NaOH H2SO4/H2O2/H20=1/2/24 250 C 60min N2)cure conditionChemical Resistance of PW-1200(1) chemical Resistance of PW-1200(2) Polyimide cure condition; 140 C 60min+350 C 60min ChemicalsConditionResulltN-methylpyrroli doneRT 15minNo changeSolventgamma-butylolactoneRT 15minNo changeEthyl lactateRT 15minNo changeAcetoneRT 15minNo changePGMEART 15minNo changeResist stripper DMSO/monomethanolamine 80C 30min 10% thickness decresaseAlkali25%NaOH40C 10minNo change10% KOH40C 10minNo changeEtchantH2SO4/H2O240C 10minNo change1% HFRT 5minNo changeFluxSenjyu Deltalux 533290C 20secNo changeCleanerArakawa Pine-arfa40C 30minNo changeSpincoat 700rpm for 10sec and 2400rpm for 30secPrebaking120oC 3min (Hot plate) ( m)Exposure250 mJ/cm2 (g-line, i-line stepper)Development120 sec.

3 Paddle development ( m)( TMAH solution)Curing140oC for 60min+350oC for 60min (N2)( m)Patterning Process of PW-1200 for 5 m Thickness after 350 oC CurePatterning process of PW-1200 by Mark-7 (TEL) PSPI coat (Mark 7)C/S Dehydro-Bake (DHP) 230 C X 60 s COL 23 C X 60 s Coater RecipeCOATSTEP Time Rotation Accel Dispence (sec) (rpm) (rpm/sec)Pre-Bake (HP) 120 C X180 s1 200 1000 0 2 0 1000 0 COL 23 C X 60 s3 700 2000 0 4 2710 1000 0C/S5 0 1000 0 Dispence PSPI at step 1 Exposure -line Stepper GCA 8000 DSW WAFER STEPPER Exposure time 600 msec (300mJ/cm2)focus 0 m Development(Mark 7)C/SDevelop recipe STEP Time Roatation Accel DispenceDEV(sec) (rpm) (rpm/sec) 1 1000 10000 0C/S2 1000 10000 1 73 500 10000 1 74 100 10000 1 75 30 10000 1 76 0 10000 57 1000 10000 1 78 500 10000 1 79 100 10000 1 710 30 10000 1 711 0 10000 512 0 10000 513 500 10000 3 4 914 2000 10000 3 4 915 3000 10000 0 Developer: TMAH Flow rate L/minRinse water Flow rate L/minExhaust 60 PaNozzle Stream nozzle CureAppratus Koyo-Lindberg Condition 140 C 30 min 350 C 60 min (slope C/min)Oxygen concentration less than 100 ppm Nitrogen gas purge Rotation speed vs.

4 Film thickness after PBy = 1500 2000 2500 3000 3500 4000 Rotation(rpm)Thickness( )Spincoat 700rpm for 10sec and 2200rpm for 30secPrebaking120oC 3min (Hot plate) ( m)Exposure1050mJ/cm2 (g-line, i-line stepper)Development40 sec 3 Paddle development ( m)( TMAH solution)Curing140oC for 30min+350oC for 60min (N2)( m)Patterning Process of PW-1270 for 10 m Thickness after 350 oC CurePW-1270 is high viscosity version of PW-1200 Patterning process of PW-1270 by Mark-7 (TEL) PSPI coat (Mark 7)C/S Dehydro-Bake (DHP) 230 C X 60 s COL 23 C X 60 s Coater RecipeCOATSTEP Time Rotation Accel Dispence (sec) (rpm) (rpm/sec)Pre-Bake (HP) 120 C X180 s1 200 1000 0 2 0 1000 0 COL 23 C X 60 s3 700 2000 0 4 2200 1000 0C/S5 0 1000 0 Dispence PSPI at step 1 Exposure -line Stepper GCA 8000 DSW WAFER STEPPER Exposure time 2100 msec (1050mJ/cm2)focus 0 m Development(Mark 7)C/SDevelop recipe STEP Time Roatation Accel DispenceDEV(sec) (rpm) (rpm/sec) 1 0 10000 0C/S2 1000 10000 1 74 0 10000 55 0 10000 56 1000 10000 1 78 0 10000 59 0 10000 510 1000 10000 1 711 20 10000 1 712 0 10000 513 0 10000 514 500 10000 3 4 915 1000 10000 3 4 916 3000 10000 017 0 10000 0 Developer.

5 TMAH Flow rate L/minRinse water Flow rate L/minExhaust 60 PaNozzle Stream nozzle CureAppratus Koyo-Lindberg Condition 140 C 30 min 350 C 60 min (slope C/min)Oxygen concentration less than 100 ppm Nitrogen gas purge Rotation speed vs. Film thickness after PBy = 1500 2000 2500 3000 3500 4000 4500 5000 Rotation(rpm)Thickness( )5 m L&S Pattern Profile of PW-1200 after 350 oC Cure10 m L&SExposure: i-line Stepper (GCA DSW-8000:NA= )Dose: 300 mJ/cm2 m after Curing on Si(5 m Thickness after Curing)Critical Dimension of PW-1200 after DevelopmentProcess ConditionPre-baking 120 C 3min (proximity) (Thickness m)Exposure tool i-line stepperDevelopment 120sec. Paddle ( solution)(Thickness m)Mask Size 10 46810121416150 200 250 300 350 Exposure Dose (mJ/cm2)Aperture Size (m)TopBottom Mask Size 5 024681012150 200 250 300 350 Exposure Dose (mJ/cm2)Aperture Size (m)TopBottomMask Size 20 14161820222426150 200 250 300 350 Exposure Dose (mJ/cm2)Aperture Size (m)TopBottomMask Linearity of PW-1200 after Development Bottom Size051015202530150 200 250 300 350 Exposure Dose (mJ/cm2)Aperture Size (m)5 m Mask10 m Mask20 m Mask Top Size051015202530150 200 250 300 350 Exposure Dose (mJ/cm2)Aperture Size (m)5 m Mask10 m Mask20 m MaskCritical Dimension of PW-1200 after CuringCuring ConditionApparatus INH-21CD (Koyo Thermosystem)Heating 140 C 60min+350 C 60min(slope.)

6 C/min)Oxygen under 300ppm (Nitrogen gas purge)(Thickness m) Mask Size 5 024681012150 200 250 300 350 400 Exposure Dose (mJ/cm2)Aperture Size (m) Mask Size 10 46810121416150 200 250 300 350 400 Exposure Dose (mJ/cm2)Aperture Size (m) Mask Size 20 14161820222426150 200 250 300 350 400 Exposure Dose (mJ/cm2)Aperture Size (m) Mask Linearity of PW-1200 after CuringBottom Size051015202530150 200 250 300 350 400 Exposure Dose (mJ/cm2)Aperture Size (m)5 m Mask10 m Mask20 m MaskTop Size051015202530150 200 250 300 350 400 Exposure Dose (mJ/cm2)Aperture Size (m)5 m Mask10 m Mask20 m MaskCure Koyo-Thermo Systems CLH-PCT :121 C, 2 atmAdhesion of PW-1200 to Substrate (Si and SiN)0 50 100 0 50 100 0 50 100 10000 Oxygen 1100250 PCT treatment time CFinal Curing Temperature C C 0 50 100 C Solder Flux Resistance of PW-1200 (1)Solder Flux: Senju Metal Industry Co.

7 , Thickness Curing ConcentrationDeltalux Deltalux -1 um Time ppm Surfce Change Surfce Change15 CrackCrack2500 31000 45 CrackCrack5500 CrackCrack61000 CrackCrack75 8500 91000 105 11500 121000 135 14500 151000 165 17500 181000 Flux NameTreatment ConditionFlux ResistancePW-1200 Polyimide Curing Condition230 C 65sec79350 C 60min380 C 60min7 Row #97320 C 60min9 Solder Flux Resistance of PW-1200 (2)Solder Flux: Senju Metal Industry Co., Thickness Curing ConcentrationDeltalux Deltalux -1 um Time ppm surfce change surfce change195 CrackCrack20500 CrackCrack211000 CrackCrack225 CrackCrack23500 CrackCrack241000 CrackCrack255 26500 271000 285 CrackCrack29500 301000 315 32500 331000 345 35500 361000 Flux ResistancePW-1200 Treatment ConditionFlux Name270 C 130sec97350 C 60min97380 60min9 Row #7320 C 60minPolyimide Curing Conditio