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Power MOSFET
Drain-source voltage VDS 100 V Gate-source voltage VGS ± 20 Continuous drain current VGS at 10 V TC = 25 °C ID 5.6 TC = 100 °C 4.0 A Pulsed drain current a IDM 20 Linear derating factor 0.29 W/°C Single pulse avalanche energy b EAS 75 mJ Repetitive avalanche current a IAR 5.6 A Repetitive avalanche energy a EAR 4.3 mJ
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