Transcription of Power MOSFET - Vishay
1 Document Number: A, 16-Jun-081 Power MOSFETIRFP450A, SiHFP450 AVishay SiliconixFEATURES Low Gate Charge Qg Results in Simple DriveRequirement Improved Gate, Avalanche and Dynamic dV/dtRuggedness Fully Characterized Capacitance andAvalanche Voltage and Current Effective Coss Specified Lead (Pb)-free AvailableAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply High Speed Power SwitchingTYPICAL SMPS TOPOLOGIES Two Transistor Forward Half Bridge, Full Bridge PFC BoostNotesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig.)
2 11).b. Starting TJ = 25 C, L = mH, RG = 25 , IAS = 14 A (see fig. 12).c. ISD 14 A, dI/dt 130 A/ s, VDD VDS, TJ 150 mm from SUMMARYVDS (V)500 RDS(on) ( )VGS = 10 V (Max.) (nC)64 Qgs (nC)16 Qgd (nC)26 ConfigurationSingleN-Channel MOSFET GDSTO-247 GDSA vailableRoHS*COMPLIANTORDERING INFORMATIONP ackageTO-247 Lead (Pb)-freeIRFP450 APbFSiHFP450A-E3 SnPbIRFP450 ASiHFP450 AABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedPARAMETER SYMBOLLIMITUNITD rain-Source Voltage VDS500V Gate-Source VoltageVGS 30 Continuous Drain CurrentVGS at 10 VTC = 25 C ID14 ATC = 100 C Drain CurrentaIDM 56 Linear Derating C Single Pulse Avalanche EnergybEAS 760mJ Repetitive Avalanche CurrentaIAR 14A Repetitive Avalanche EnergyaEAR19mJ Maximum Power
3 DissipationTC = 25 C PD190W Peak Diode Recovery dV/dtcdV/dt Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to + 150 C Soldering Recommendations (Peak Temperature)for 10 s300dMounting Torque6-32 or M3 screw10 lbf m* Pb containing terminations are not RoHS compliant, exemptions may apply Number: 912302S-81271-Rev. A, 16-Jun-08 IRFP450A, SiHFP450 AVishay SiliconixNotesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width 300 s; duty cycle 2 %.
4 C. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % RESISTANCE RATINGSPARAMETER Junction-to-AmbientRthJA-40 C/WCase-to-Sink, Flat, Greased Junction-to-Case (Drain) = 25 C, unless otherwise notedPARAMETER SYMBOLTEST CONDITIONS Breakdown Voltage VDS VGS = 0 V, ID = 250 A 500--V VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA C Gate-Source Threshold Voltage VGS(th)
5 VDS = VGS, ID = 250 A Gate-Source Leakage IGSS VGS = 30 V-- 100nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V --25 A VDS = 400 V, VGS = 0 V, TJ = 125 C --250 Drain-Source On-State Resistance RDS(on) VGS = 10 VID = Forward Transconductance gfs VDS = 50 V, ID = DynamicInput Capacitance Ciss VGS = 0 V, VDS = 25 V, f = MHz, see fig. 5 -2038-pFOutput Capacitance Coss -307-Reverse Transfer Capacitance Crss -10-Output Capacitance Coss VGS = 0 V; VDS = V, f = MHz2859 Output Capacitance Coss VGS = 0 V; VDS = 400 V, f = MHz81 Effective Output Capacitance Coss = 0 V; VDS = 0 V to 400 Vc96 Total Gate Charge Qg VGS = 10 V ID = 14 A, VDS = 400 V, see fig.
6 6 and 13b--64nC Gate-Source Charge Qgs --16 Gate-Drain ChargeQgd --26 Turn-On Delay Time td(on) VDD = 250 V, ID = 14 A, RG = , RD = 17 , see fig. 10b-15-nsRise Timetr -36-Turn-Off Delay Time td(off) -35-Fall Time tf -29-Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode Current ISMOSFET symbolshowing the integral reversep - n junction diode--14 APulsed Diode Forward CurrentaISM--56 Body Diode VoltageVSDTJ = 25 C, IS = 14 A, VGS = 0 Diode Reverse Recovery TimetrrTJ = 25 C, IF = 14 A.
7 DI/dt = 100 A/ sb-487731nsBody Diode Reverse Recovery CForward Turn-On TimetonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)SDG Document Number: A, 16-Jun-083 IRFP450A, SiHFP450 AVishay SiliconixTYPICAL CHARACTERISTICS 25 C, unless otherwise notedFig. 1 - Typical Output CharacteristicsFig. 2 - Typical Output CharacteristicsFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. Temperature Number: 912304S-81271-Rev. A, 16-Jun-08 IRFP450A, SiHFP450 AVishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig.
8 6 - Typical Gate Charge vs. Gate-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating Area Document Number: A, 16-Jun-085 IRFP450A, SiHFP450 AVishay SiliconixFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsPulse width 1 sDuty factor % V+-VDSVDDVDS90 %10 %VGStd(on)trtd(off) +-VDDD river15 V20 VIASVDStp Number: 912306S-81271-Rev.
9 A, 16-Jun-08 IRFP450A, SiHFP450 AVishay SiliconixFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 12d - Typical Drain-to-Source Voltage vs. Avalanche CurrentFig. 13b - Gate Charge Test CircuitQGSQGDQGVGC harge10 F50 k 12 VCurrent regulatorCurrent sampling resistorsSame type as +- Document Number: A, 16-Jun-087 IRFP450A, SiHFP450 AVishay SiliconixFig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations.
10 Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see recoverydV/dtRipple 5 %Body diode forward dropRe-appliedvoltageReverserecoverycurr entBody diode forwardcurrentVGS = 10 V* VDDISDD river gate VDSwaveformInductor currentD = +-+++---* VGS = 5 V for logic level devicesPeak Diode Recovery dV/dt Test CircuitVDD dV/dt controlled by RG Driver same type as ISD controlled by duty factor "D" - device under layout considerations Low stray inductance Ground plane Low leakage inductance current transformerRGPackage Siliconix Revision: 08-Jan-20201 Document Number.
