Power MOSFET - Vishay

1 IRF510, Siliconix S15-2693-Rev. C, 16-Nov-151 Document Number: 91015 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETFEATURES Dynamic dV/dt rating Repetitive avalanche rated 175 C operating temperature Fast switching Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see *This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for generation Power mosfets from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

2 The TO-220AB package is universally preferred for all commercial-industrial applications at Power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = 25 V, starting TJ = 25 C, L = mH, Rg = 25 , IAS = A (see fig. 12).c. ISD A, dI/dt 75 A/ s, VDD VDS, TJ 175 mm from SUMMARYVDS (V)100 RDS(on) ( )VGS = 10 V max. (nC) (nC) (nC) MOSFETGDSTO-220 ABGDSA vailableAvailableORDERING INFORMATION INFORMATIONP ackageTO-220 ABLead (Pb)-freeIRF510 PbFSiHF510-E3 SnPbIRF510 SiHF510 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER SYMBOLLIMITUNITD rain-Source Voltage VDS100V Gate-Source VoltageVGS 20 Continuous Drain CurrentVGS at 10 VTC = 25 C = 100 C Drain Current aIDM 20 Linear Derating C Single Pulse Avalanche Energy bEAS 75mJ Repetitive Avalanche Current aIAR Repetitive Avalanche Energy Maximum Power DissipationTC = 25 C PD43W Peak Diode Recovery dV/dt cdV/dt Operating Junction and Storage Temperature RangeTJ, Tstg-55 to +175 C Soldering Recommendations (Peak temperature) dfor 10 s300 Mounting Torque6-32 or M3 screw10 lbf mIRF510, Siliconix S15-2693-Rev.

3 C, 16-Nov-152 Document Number: 91015 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width 300 s; duty cycle 2 %.THERMAL RESISTANCE RATINGSPARAMETER Junction-to-AmbientRthJA-62 C/WCase-to-Sink, Flat, Greased Junction-to-Case (Drain) (TJ = 25 C, unless otherwise noted)PARAMETER SYMBOLTEST CONDITIONS Breakdown Voltage VDS VGS = 0 V, ID = 250 A 100--V VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA C Gate-Source Threshold Voltage VGS(th)VDS = VGS, ID = 250 A Gate-Source Leakage IGSS VGS = 20 V-- 100nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V --25 A VDS = 80 V, VGS = 0 V, TJ = 150 C --250 Drain-Source On-State Resistance RDS(on) VGS = 10 VID = A Forward Transconductance gfs VDS = 50 V, ID = A DynamicInput Capacitance Ciss VGS = 0 V,VDS = 25 V,f = MHz, see fig.

4 5 -180-pFOutput Capacitance Coss -81-Reverse Transfer Capacitance Crss -15-Total Gate Charge Qg VGS = 10 V ID = A, VDS = 80 V VDS = 10 V, see fig. 6 and fig. 13 Gate-Source Charge Qgs ChargeQgd Delay Time td(on) VDD = 50 V, ID = A Rg = 24 , RD = , see fig. 10 Timetr -16-Turn-Off Delay Time td(off) -15-Fall Time tf Drain Inductance LD Between lead, 6 mm ( ") from package and center of die contact Internal Source Body Diode CharacteristicsContinuous Source-Drain Diode Current ISMOSFET symbol showing the integral reverse p - n junction Diode Forward CurrentaISM--20 Body Diode VoltageVSDTJ = 25 C, IS = A, VGS = 0 V Diode Reverse Recovery TimetrrTJ = 25 C, IF = A, dI/dt = 100 A/ s b-100200nsBody Diode Reverse Recovery CForward Turn-On TimetonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)DSGSDGIRF510, Siliconix S15-2693-Rev.

5 C, 16-Nov-153 Document Number: 91015 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 C Fig. 2 - Typical Output Characteristics, TC = 175 C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage91015_0120 s pulse widthTC = 25 VVDS, Drain-to-Source Voltage (V)ID, Drain Current (A)101 BottomTo pVGS15 V10 V10010-110010110110010-1100101 VDS, Drain-to-Source Voltage (V)ID, Drain Current (A) VBottomTo pVGS15 V10 V20 s pulse widthTC = 175 C91015_0220 s pulse widthVDS = 50 V10110010-1ID, Drain Current (A)VGS, Gate-to-Source Voltage (V)5678910425 C175 C91015_03ID = AVGS = 10 60 - 40 - 20 0 20 40 60 80 100 120 140 160TJ, Junction Temperature ( C)RDS(on), Drain-to-Source On Resistance(Normalized)91015_041804003202 40160080100101 VGS = 0 V, f = 1 MHzCiss = Cgs + Cgd, Cds shortedCrss = CgdCoss = Cds + CgdCissCrssCossCapacitance (pF)VDS, Drain-to-Source Voltage (V)91015_0520161280402864ID = AVDS = 20 VFor test circuitsee figure 1310 VDS = 50 VVDS = 80 VQG, Total Gate Charge (nC)VGS, Gate-to-Source Voltage (V)91015_06 IRF510, Siliconix S15-2693-Rev.

6 C, 16-Nov-154 Document Number: 91015 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case91015_0725 C175 CVGS = 0 V10-1100 VSD, Source-to-Drain Voltage (V)ISD, Reverse Drain Current (A) s1 ms10 msOperation in this area limitedby RDS(on)VDS, Drain-to-Source Voltage (V)ID, Drain Current (A)TC = 25 CTJ = 175 Csingle , Drain Current (A)TC, Case Temperature ( C) width 1 sDuty factor % V+-VDSVDDVDS90 %10 %VGStd(on)trtd(off) , Rectangular Pulse Duration (s)Thermal Response (ZthJC)Notes:1. Duty factor, D = t1/t22.

7 Peak Tj = PDM x ZthJC + TCSingle pulse(thermal response)0 - , Siliconix S15-2693-Rev. C, 16-Nov-155 Document Number: 91015 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test +-VDD10 VVar y tp to obtainrequired IASIASVDSVDDVDStp30005010015020025025150 1251007550 Starting TJ, Junction Temperature ( C)EAS, Single Pulse Energy (mJ)BottomTo AVDD = 25 V91015_12c175 QGSQGDQGVGC harge10 F50 k 12 VCurrent regulatorCurrent sampling resistorsSame type as +-IRF510, Siliconix S15-2693-Rev. C, 16-Nov-156 Document Number: 91015 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

8 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see recoverydV/dtRipple 5 %Body diode forward dropRe-appliedvoltageReverserecoverycurr entBody diode forwardcurrentVGS = 10 Va ISDD river gate lSD VDS waveformInductor currentD = +-+++---Peak Diode Recovery dV/dt Test CircuitVDD dV/dt controlled by Rg Driver same type as ISD controlled by duty factor D - device under layout considerations Low stray inductance Ground plane Low leakage inductancecurrent transformerRgNotea.

9 VGS = 5 V for logic level devicesVDDP ackage Siliconix Revison: 14-Dec-151 Document Number: 66542 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT M* = inches to inches (dimension includingprotrusion), heatsink hole for HVMM*321LL(1)DH(1)Q PAFJ(1)b(1)e(1) (1) (1) (1) (1) (1) : X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Package PictureASEXi anLegal Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

10 To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application.