Power MOSFET - Vishay

1 Document Number: B, 21-Mar-111 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETIRFP240, SiHFP240 Vishay SiliconixFEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/ECDESCRIPTIONT hird generation Power mosfets from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness. The TO-247AC package is preferred forcommercial-industrial applications where higher powerlevels preclude the use of TO-220AB devices. TheTO-247AC is similar but superior to the earlier TO-218package because its isolated mounting hole. It also providesgreater creepage distances between pins to meet therequirements of most safety Repetitive rating; pulse width limited by maximum junction temperature (see fig.)

2 11).b. VDD = 50 V, starting TJ = 25 C, L = mH, Rg = 25 , IAS = 20 A (see fig. 12).c. ISD 18 A, dI/dt 150 A/ s, VDD VDS, TJ 150 mm from SUMMARYVDS (V)200 RDS(on) ( )VGS = 10 V (Max.) (nC)70 Qgs (nC)13 Qgd (nC)39 ConfigurationSingleN-Channel MOSFET GDSTO-247 ACGDSA vailableRoHS*COMPLIANTORDERING INFORMATIONP ackageTO-247 ACLead (Pb)-freeIRFP240 PbFSiHFP240-E3 SnPbIRFP240 SiHFP240 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER SYMBOLLIMITUNITD rain-Source Voltage VDS200V Gate-Source VoltageVGS 20 Continuous Drain CurrentVGS at 10 VTC = 25 C ID20 ATC = 100 C 12 Pulsed Drain CurrentaIDM 80 Linear Derating C Single Pulse Avalanche EnergybEAS 510mJ Repetitive Avalanche CurrentaIAR 20A Repetitive Avalanche EnergyaEAR15mJ Maximum Power DissipationTC = 25 C PD150W Peak Diode Recovery dV/dtcdV/dt Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to + 150 C Soldering Recommendations (Peak Temperature)

3 For 10 s300dMounting Torque6-32 or M3 screw10 lbf m* Pb containing terminations are not RoHS compliant, exemptions may apply Number: 912102S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFP240 Vishay SiliconixNotesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width 300 s; duty cycle 2 %.THERMAL RESISTANCE RATINGSPARAMETER Junction-to-AmbientRthJA-40 C/WCase-to-Sink, Flat, Greased Junction-to-Case (Drain) (TJ = 25 C, unless otherwise noted)PARAMETER SYMBOLTEST CONDITIONS Breakdown Voltage VDS VGS = 0 V, ID = 250 A 200--V VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA C Gate-Source Threshold Voltage VGS(th)VDS = VGS, ID = 250 A Gate-Source Leakage IGSS VGS = 20 V-- 100nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V --25 A VDS = 160 V, VGS = 0 V, TJ = 125 C --250 Drain-Source On-State Resistance RDS(on) VGS = 10 VID = 12 Forward Transconductance gfs VDS = 50 V, ID = 12 DynamicInput Capacitance Ciss VGS = 0 V, VDS = 25 V, f = MHz, see fig.

4 5 -1300-pFOutput Capacitance Coss -400-Reverse Transfer Capacitance Crss -130-Total Gate Charge Qg VGS = 10 V ID = 18 A, VDS = 160 V, see fig. 6 and 13b--70nC Gate-Source Charge Qgs --13 Gate-Drain ChargeQgd --39 Turn-On Delay Time td(on) VDD = 100 V, ID = 18 A, Rg = , RD = , see fig. 10b-14-nsRise Timetr -51-Turn-Off Delay Time td(off) -45-Fall Time tf -36-Internal Drain Inductance LD Between lead,6 mm ( ") from package and center of die contact Internal Source InductanceLS-13-Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode Current ISMOSFET symbolshowing the integral reversep - n junction diode--20 APulsed Diode Forward CurrentaISM--80 Body Diode VoltageVSDTJ = 25 C, IS = 20 A, VGS = 0 Diode Reverse Recovery TimetrrTJ = 25 C, IF = 18 A, dI/dt = 100 A/ sb-300610nsBody Diode Reverse Recovery CForward Turn-On TimetonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)DSGSDG Document Number.

5 B, 21-Mar-113 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFP240 Vishay SiliconixTYPICAL CHARACTERISTICS (25 C, unless otherwise noted)Fig. 1 - Typical Output Characteristics, TC = 25 CFig. 2 - Typical Output Characteristics, TC = 150 CFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. Temperature Number: 912104S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFP240 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 6 - Typical Gate Charge vs. Gate-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating Area Document Number: B, 21-Mar-115 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFP240 Vishay SiliconixFig.

6 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CasePulse width 1 sDuty factor % V+-VDSVDDVDS90 %10 %VGStd(on)trtd(off)tf Number: 912106S11-0445-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFP240 Vishay SiliconixFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test +-VDD10 VVar y tp to obtainrequired IASIASVDSVDDVDStpQGSQGDQGVGC harge10 F50 k 12 VCurrent regulatorCurrent sampling resistorsSame type as +- Document Number: B, 21-Mar-117 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFP240 Vishay SiliconixFig.

7 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see recoverydV/dtRipple 5 %Body diode forward dropRe-appliedvoltageReverserecoverycurr entBody diode forwardcurrentVGS = 10 Va ISDD river gate lSD VDS waveformInductor currentD = +-+++---Peak Diode Recovery dV/dt Test CircuitVDD dV/dt controlled by Rg Driver same type as ISD controlled by duty factor D - device under layout considerations Low stray inductance Ground plane Low leakage inductancecurrent transformerRgNotea. VGS = 5 V for logic level devicesVDD Package Siliconix Revision: 01-Jul-131 Document Number: 91360 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

8 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (High Voltage)Notes1. Dimensioning and tolerancing per ASME Contour of slot Dimension D and E do not include mold flash. Mold flash shall not exceed mm ( ") per side. These dimensions are measured at the outermost extremes of the plastic Thermal pad contour optional with dimensions D1 and Lead finish uncontrolled in P to have a maximum draft angle of to the top of the part with a maximum hole diameter of mm ( ").7. Outline conforms to JEDEC outline TO-247 with exception of dimension Xian and Mingxin actually photo. BSCECN: X13-0103-Rev. D, 01-Jul-13 DWG: (2)(4) R/2B2 x RSDSee view B2 x e b43 x b2 x b2LC L1123 QDAA2 AAA1C kBDMMA P(Datum B) A - AThermal padD2 DDEECCView B(b1, b3, b5)Base metalc1(b, b2, b4)Section C - C, D - D, E - E(c)Planting4357444 Lead Assignments1.

9 Gate2. Drain3. Source4. DrainLegal Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

10 Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.