Power MOSFET - Vishay

1 IRF510, Siliconix S15-2693-Rev. C, 16-Nov-151 Document Number: 91015 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETFEATURES Dynamic dV/dt rating Repetitive avalanche rated 175 C operating temperature Fast switching Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see *This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for generation Power mosfets from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

2 The TO-220AB package is universally preferred for all commercial-industrial applications at Power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = 25 V, starting TJ = 25 C, L = mH, Rg = 25 , IAS = A (see fig. 12).c. ISD A, dI/dt 75 A/ s, VDD VDS, TJ 175 mm from SUMMARYVDS (V)100 RDS(on) ( )VGS = 10 V max. (nC) (nC) (nC) MOSFETGDSTO-220 ABGDSA vailableAvailableORDERING INFORMATION INFORMATIONP ackageTO-220 ABLead (Pb)-freeIRF510 PbFSiHF510-E3 SnPbIRF510 SiHF510 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

3 PARAMETER SYMBOLLIMITUNITD rain-Source Voltage VDS100V Gate-Source VoltageVGS 20 Continuous Drain CurrentVGS at 10 VTC = 25 C = 100 C Drain Current aIDM 20 Linear Derating C Single Pulse Avalanche Energy bEAS 75mJ Repetitive Avalanche Current aIAR Repetitive Avalanche Energy Maximum Power DissipationTC = 25 C PD43W Peak Diode Recovery dV/dt cdV/dt Operating Junction and Storage Temperature RangeTJ, Tstg-55 to +175 C Soldering Recommendations (Peak temperature) dfor 10 s300 Mounting Torque6-32 or M3 screw10 lbf mIRF510, Siliconix S15-2693-Rev.

4 C, 16-Nov-152 Document Number: 91015 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width 300 s; duty cycle 2 %.THERMAL RESISTANCE RATINGSPARAMETER Junction-to-AmbientRthJA-62 C/WCase-to-Sink, Flat, Greased Junction-to-Case (Drain) (TJ = 25 C, unless otherwise noted)PARAMETER SYMBOLTEST CONDITIONS Breakdown Voltage VDS VGS = 0 V, ID = 250 A 100--V VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA C Gate-Source Threshold Voltage VGS(th)

5 VDS = VGS, ID = 250 A Gate-Source Leakage IGSS VGS = 20 V-- 100nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V --25 A VDS = 80 V, VGS = 0 V, TJ = 150 C --250 Drain-Source On-State Resistance RDS(on) VGS = 10 VID = A Forward Transconductance gfs VDS = 50 V, ID = A DynamicInput Capacitance Ciss VGS = 0 V,VDS = 25 V,f = MHz, see fig. 5 -180-pFOutput Capacitance Coss -81-Reverse Transfer Capacitance Crss -15-Total Gate Charge Qg VGS = 10 V ID = A, VDS = 80 V VDS = 10 V, see fig. 6 and fig. 13 Gate-Source Charge Qgs ChargeQgd Delay Time td(on) VDD = 50 V, ID = A Rg = 24 , RD = , see fig.

6 10 Timetr -16-Turn-Off Delay Time td(off) -15-Fall Time tf Drain Inductance LD Between lead, 6 mm ( ") from package and center of die contact Internal Source Body Diode CharacteristicsContinuous Source-Drain Diode Current ISMOSFET symbol showing the integral reverse p - n junction Diode Forward CurrentaISM--20 Body Diode VoltageVSDTJ = 25 C, IS = A, VGS = 0 V Diode Reverse Recovery TimetrrTJ = 25 C, IF = A, dI/dt = 100 A/ s b-100200nsBody Diode Reverse Recovery CForward Turn-On TimetonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)DSGSDGIRF510, Siliconix S15-2693-Rev.

7 C, 16-Nov-153 Document Number: 91015 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 C Fig. 2 - Typical Output Characteristics, TC = 175 C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage91015_0120 s pulse widthTC = 25 VVDS, Drain-to-Source Voltage (V)ID, Drain Current (A)101 BottomTo pVGS15 V10 V10010-110010110110010-1100101 VDS, Drain-to-Source Voltage (V)ID, Drain Current (A) VBottomTo pVGS15 V10 V20 s pulse widthTC = 175 C91015_0220 s pulse widthVDS = 50 V10110010-1ID, Drain Current (A)VGS, Gate-to-Source Voltage (V)5678910425 C175 C91015_03ID = AVGS = 10 60 - 40 - 20 0 20 40 60 80 100 120 140 160TJ, Junction Temperature ( C)RDS(on), Drain-to-Source On Resistance(Normalized)91015_041804003202 40160080100101 VGS = 0 V, f = 1 MHzCiss = Cgs + Cgd, Cds shortedCrss = CgdCoss = Cds + CgdCissCrssCossCapacitance (pF)

8 VDS, Drain-to-Source Voltage (V)91015_0520161280402864ID = AVDS = 20 VFor test circuitsee figure 1310 VDS = 50 VVDS = 80 VQG, Total Gate Charge (nC)VGS, Gate-to-Source Voltage (V)91015_06 IRF510, Siliconix S15-2693-Rev. C, 16-Nov-154 Document Number: 91015 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case91015_0725 C175 CVGS = 0 V10-1100 VSD, Source-to-Drain Voltage (V)ISD, Reverse Drain Current (A) s1 ms10 msOperation in this area limitedby RDS(on)VDS, Drain-to-Source Voltage (V)ID, Drain Current (A)TC = 25 CTJ = 175 Csingle , Drain Current (A)TC, Case Temperature ( C) width 1 sDuty factor % V+-VDSVDDVDS90 %10 %VGStd(on)trtd(off) , Rectangular Pulse Duration (s)Thermal Response (ZthJC)Notes:1.

9 Duty factor, D = t1/t22. Peak Tj = PDM x ZthJC + TCSingle pulse(thermal response)0 - , Siliconix S15-2693-Rev. C, 16-Nov-155 Document Number: 91015 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test +-VDD10 VVar y tp to obtainrequired IASIASVDSVDDVDStp30005010015020025025150 1251007550 Starting TJ, Junction Temperature ( C)EAS, Single Pulse Energy (mJ)BottomTo AVDD = 25 V91015_12c175 QGSQGDQGVGC harge10 F50 k 12 VCurrent regulatorCurrent sampling resistorsSame type as +-IRF510, Siliconix S15-2693-Rev.

10 C, 16-Nov-156 Document Number: 91015 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see recoverydV/dtRipple 5 %Body diode forward dropRe-appliedvoltageReverserecoverycurr entBody diode forwardcurrentVGS = 10 Va ISDD river gate lSD VDS waveformInductor currentD = +-+++---Peak Diode Recovery dV/dt Test CircuitVDD dV/dt controlled by Rg Driver same type as ISD controlled by duty factor D - device under layout considerations Low stray inductance Ground plane Low leakage inductancecurrent transformerRgNotea.