Power MOSFET - Vishay

1 Document Number: 91017 B, 21-Mar-111 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETIRF520, SiHF520 Vishay Siliconix FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/ECDESCRIPTIONT hird generation Power mosfets from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness. The TO-220AB package is universally preferred for allcommercial-industrial applications at Power dissipationlevels to approximately 50 W. The low thermal resistanceand low package cost of the TO-220AB contribute to itswide acceptance throughout the Repetitive rating; pulse width limited by maximum junction temperature (see fig.)

2 11).b. VDD = 25 V, starting TJ = 25 C, L = mH, Rg = 25 , IAS = A (see fig. 12).c. ISD A, dI/dt 110 A/ s, VDD VDS, TJ 175 mm from SUMMARYVDS (V)100 RDS(on) ( )VGS = 10 V (Max.) (nC)16 Qgs (nC) (nC) MOSFET GDSTO-220 ABGDSA vailableRoHS*COMPLIANTORDERING INFORMATIONP ackageTO-220 ABLead (Pb)-freeIRF520 PbFSiHF520-E3 SnPbIRF520 SiHF520 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER SYMBOLLIMITUNITD rain-Source Voltage VDS100V Gate-Source VoltageVGS 20 Continuous Drain CurrentVGS at 10 VTC = 25 C = 100 C Drain CurrentaIDM 37 Linear Derating C Single Pulse Avalanche EnergybEAS 200mJ Repetitive Avalanche CurrentaIAR Repetitive Avalanche Maximum Power DissipationTC = 25 C PD60W Peak Diode Recovery dV/dtcdV/dt Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to + 175 C Soldering Recommendations (Peak Temperature)

3 For 10 s300dMounting Torque6-32 or M3 screw10 lbf m* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 910172S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF520 Vishay Siliconix Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width 300 s; duty cycle 2 %.THERMAL RESISTANCE RATINGSPARAMETER Junction-to-AmbientRthJA-62 C/WCase-to-Sink, Flat, Greased Junction-to-Case (Drain) (TJ = 25 C, unless otherwise noted)PARAMETER SYMBOLTEST CONDITIONS Breakdown Voltage VDS VGS = 0 V, ID = 250 A 100--V VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA C Gate-Source Threshold Voltage VGS(th)VDS = VGS, ID = 250 A Gate-Source Leakage IGSS VGS = 20 V-- 100nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V --25 A VDS = 80 V, VGS = 0 V, TJ = 150 C --250 Drain-Source On-State Resistance RDS(on)

4 VGS = 10 VID = Forward Transconductance gfs VDS = 50 V, ID = DynamicInput Capacitance Ciss VGS = 0 V, VDS = 25 V, f = MHz, see fig. 5 -360-pFOutput Capacitance Coss -150-Reverse Transfer Capacitance Crss -34-Total Gate Charge Qg VGS = 10 V ID = A, VDS = 80 V, see fig. 6 and 13b--16nC Gate-Source Charge Qgs ChargeQgd Delay Time td(on) VDD = 50 V, ID = A, Rg = 18 , RD = , see fig. Timetr -30-Turn-Off Delay Time td(off) -19-Fall Time tf -20-Internal Drain Inductance LD Between lead,6 mm ( ") from package and center of die contact Internal Source Body Diode CharacteristicsContinuous Source-Drain Diode Current ISMOSFET symbolshowing the integral reversep - n junction Diode Forward CurrentaISM--37 Body Diode VoltageVSDTJ = 25 C, IS = A, VGS = 0 Diode Reverse Recovery TimetrrTJ = 25 C, IF = A, dI/dt = 100 A/ sb-110260nsBody Diode Reverse Recovery CForward Turn-On TimetonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)DSGSDG Document Number.

5 91017 B, 21-Mar-113 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF520 Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)Fig. 1 - Typical Output Characteristics, TC = 25 CFig. 2 - Typical Output Characteristics, TC = 175 CFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. Temperature91017_01 BottomTo pVGS15 V10 V20 s Pulse WidthTC = 25 VVDS, Drain-to-Source Voltage (V)ID, Drain Current (A)10110010-1100101 VDS, Drain-to-Source Voltage (V)ID, Drain Current (A) VBottomTo pVGS15 V10 V20 s Pulse WidthTC = 175 C91017_0210110010-110010120 s Pulse WidthVDS = 50 VID, Drain Current (A)VGS, Gate-to-Source Voltage (V)56 78910425 C175 C91017_03101100ID = AVGS = 10 60 - 40 - 20 0 20 40 60 80 100 120 140 160TJ, Junction Temperature ( C)RDS(on), Drain-to-Source On Resistance(Normalized)91017_04180 Document Number: 910174S11-0511-Rev.

6 B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF520 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 6 - Typical Gate Charge vs. Gate-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating Area7506004503000150100101 Capacitance (pF)VDS, Drain-to-Source Voltage (V)CissCrssCossVGS = 0 V, f = 1 MHzCiss = Cgs + Cgd, Cds ShortedCrss = CgdCoss = Cds + Cgd91017_05QG, Total Gate Charge (nC)VGS, Gate-to-Source Voltage (V)201612804042016128ID = AFor test circuitsee figure 1391017_06 VDS = 20 VVDS = 50 VVDS = 80 V101100 VSD, Source-to-Drain Voltage (V)ISD, Reverse Drain Current (A)25 C175 CVGS = 0 s100 s1 ms10 msOperation in this area limitedby RDS(on)VDS, Drain-to-Source Voltage (V)ID, Drain Current (A)TC = 25 CTJ = 175 CSingle Document Number.

7 91017 B, 21-Mar-115 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF520 Vishay Siliconix Fig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseID, Drain Current (A)TC, Case Temperature ( C)024681025175150100755091017_09125 Pulse width 1 sDuty factor % V+-VDSVDDVDS90 %10 %VGStd(on)trtd(off) , Rectangular Pulse Duration (s)Thermal Response (ZthJC)Notes:1. Duty Factor, D = t1/t22. Peak Tj = PDM x ZthJC + TCSingle Pulse(Thermal Response)0 - Document Number: 910176S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF520 Vishay Siliconix Fig.

8 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test +-VDDA10 VVar y tp to obtainrequired IASIASVDSVDDVDStp60001002003004005002515 01251007550 Starting TJ, Junction Temperature ( C)EAS, Single Pulse Energy (mJ)BottomTo AVDD = 25 V91017_12c175 QGSQGDQGVGC harge10 F50 k 12 VCurrent regulatorCurrent sampling resistorsSame type as +- Document Number: 91017 B, 21-Mar-117 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHF520 Vishay Siliconix Fig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability.

9 Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see recoverydV/dtRipple 5 %Body diode forward dropRe-appliedvoltageReverserecoverycurr entBody diode forwardcurrentVGS = 10 Va ISDD river gate lSD VDS waveformInductor currentD = +-+++---Peak Diode Recovery dV/dt Test CircuitVDD dV/dt controlled by Rg Driver same type as ISD controlled by duty factor D - device under layout considerations Low stray inductance Ground plane Low leakage inductancecurrent transformerRgNotea. VGS = 5 V for logic level devicesVDDP ackage Siliconix Revison: 14-Dec-151 Document Number: 66542 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

10 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT M* = inches to inches (dimension includingprotrusion), heatsink hole for HVMM*321LL(1)DH(1)Q PAFJ(1)b(1)e(1) (1) (1) (1) (1) (1) : X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Package PictureASEXi anLegal Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.