Power MOSFET - vishay.com

1 Siliconix S21-0819-Rev. C, 02-Aug-20211 Document Number: 91019 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETFEATURES Dynamic dV/dt rating Repetitive avalanche rated 175 C operating temperature Fast switching Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see *This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant.

2 For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for detailsDESCRIPTIONT hird generation Power MOSFETs from vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at Power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the Repetitive rating; pulse width limited by maximum junction temperature (see fig.)

3 11)b. VDD = 25 V, starting TJ = 25 C, L = 528 H, Rg = 25 , IAS = 14 A (see fig. 12)c. ISD 14 A, dI/dt 140 A/ s, VDD VDS, TJ 175 Cd. mm from casePRODUCT SUMMARYVDS (V)100 RDS(on) ( )VGS = 10 V max. (nC)26 Qgs (nC) (nC)11 ConfigurationSingleN-Channel MOSFETGDSTO-220 ABGDSA vailableAvailableAvailableORDERING INFORMATIONP ackageTO-220 ABLead (Pb)-freeIRF530 PbFLead (Pb)-free and halogen-freeIRF530 PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER SYMBOLLIMITUNITD rain-source voltage VDS100V Gate-source voltageVGS 20 Continuous drain currentVGS at 10 VTC = 25 C ID14 ATC = 100 C 10 Pulsed drain current aIDM 56 Linear derating C Single pulse avalanche energy bEAS 69mJ Repetitive avalanche current aIAR 14A Repetitive avalanche energy Maximum Power dissipationTC = 25 C PD88W Peak

4 Diode recovery dV/dt cdV/dt Operating junction and storage temperature rangeTJ, Tstg-55 to +175 C Soldering recommendations (peak temperature) dFor 10 s300 Mounting torque6-32 or M3 screw10 lbf Siliconix S21-0819-Rev. C, 02-Aug-20212 Document Number: 91019 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Repetitive rating; pulse width limited by maximum junction temperature (see fig.)

5 11)b. Pulse width 300 s; duty cycle 2 %THERMAL RESISTANCE RATINGSPARAMETER junction-to-ambientRthJA-62 C/WCase-to-sink, flat, greased junction-to-case (drain) (TJ = 25 C, unless otherwise noted)PARAMETER SYMBOLTEST CONDITIONS breakdown voltage VDS VGS = 0 V, ID = 250 A 100--V VDS temperature coefficient VDS/TJ Reference to 25 C, ID = 1 mA C Gate-source threshold voltage VGS(th)

6 VDS = VGS, ID = 250 A Gate-source leakage IGSS VGS = 20 V-- 100nA Zero gate voltage drain current IDSS VDS = 100 V, VGS = 0 V --25 A VDS = 80 V, VGS = 0 V, TJ = 150 C --250 Drain-source on-state resistance RDS(on) VGS = 10 VID = A Forward transconductance gfs VDS = 50 V, ID = A DynamicInput capacitance Ciss VGS = 0 V,VDS = 25 V,f = MHz, see fig. 5 -670-pFOutput capacitance Coss -250-Reverse transfer capacitance Crss -60-Total gate charge Qg VGS = 10 V ID = 14 A, VDS = 80 V, see fig.

7 6 and 13 b--26nC Gate-source charge Qgs chargeQgd --11 Turn-on delay time td(on) VDD = 50 V, ID = 14 A Rg = 12 , RD = , see fig. 10 b-10-nsRise timetr -34-Turn-off delay time td(off) -23-Fall time tf -24-Gate input resistanceRgf = 1 MHz, open Internal drain inductance LD Between lead,6 mm ( ")

8 From package and center of die contact Internal source Body Diode CharacteristicsContinuous source-drain diode current ISMOSFET symbolshowing the integral reverse p - n junction diode--14 APulsed diode forward current aISM--56 Body diode voltageVSDTJ = 25 C, IS = 14 A, VGS = 0 V diode reverse recovery timetrrTJ = 25 C, IF = 14 A, dI/dt = 100 A/ s b-150280nsBody diode reverse recovery CForward turn-on timetonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Siliconix S21-0819-Rev. C, 02-Aug-20213 Document Number: 91019 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

9 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 C Fig. 2 - Typical Output Characteristics, TC = 175 CFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. TemperatureFig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage91019_0120 s Pulse WidthTC = 25 VVDS, Drain-to-Source Voltage (V)ID, Drain Current (A)BottomTo pVGS15 V10 V10110010-1100101 VDS, Drain-to-Source Voltage (V)ID, Drain Current (A) V20 s Pulse WidthTC = 175 C91019_02 BottomTo pVGS15 V10 V10110010-110010120 s Pulse WidthVDS = 50 VID, Drain Current (A)VGS, Gate-to-Source Voltage (V)5678910425 C175 C91019_03101100ID = 14 AVGS = 10 60- 40 - 20 0 20 40 60 80 100 120 140 160TJ, Junction Temperature ( C)RDS(on), Drain-to-Source On Resistance(Normalized) (pF)

10 VDS, Drain-to-Source Voltage (V)CissCrssCossVGS = 0 V, f = 1 MHzCiss = Cgs + Cgd, Cds ShortedCrss = CgdCoss = Cds + Cgd91019_05200QG, Total Gate Charge (nC)VGS, Gate-to-Source Voltage (V)2016128040525201510ID = 14 AVDS = 20 VVDS = 50 VFor test circuitsee figure 13 VDS = 80 Siliconix S21-0819-Rev. C, 02-Aug-20214 Document Number: 91019 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating AreaFig.