Selection guide / Si photodiodes - Hamamatsu

1 Application Related Related Home Packages Lineup examples products information Lineup for near infrared to ultraviolet and even to high-energy Si photodiodes Please watch with an internet connection. August 2023 Selection guide 1 / 45. Application Related Related Home Packages Lineup examples products information Si photodiodes Hamamatsu 's unique semiconductor process technology achieves high speed, high sensitivity, and low noise over a wide range of wavelengths. Hamamatsu Si photodiodes are used in a wide range of applications including medical, analytical, scientific measurements, optical communications, LiDAR, and general electronic products. These photodiodes are available in various packages such as metal, ceramic, and plastic packages, as well as in surface mount types. We also offer custom-designed devices. 2 / 45. Application Related Related Home Packages Lineup Fluorescence measurement LCD backlight color adjustment examples products information Application examples Fluorescence measurement LCD backlight color adjustment Sunlight sensors Si PIN photodiode Reagent RGB color sensor Si photodiode Emission Radiation detectors Sample RGB-LED.

2 KAPDC0103EA KSPDC0077EA KSPDC0079EA. Si photodiodes are used in PCR inspection using the The RGB color sensor detects the white balance of LCD Si photodiodes are used to detect the amount of sunshine fluorescence method. backlight optical waveguides and controls the light level of to control the volume of air flow for automotive air each RGB-LED to stabilize the LCD backlight color. conditioners. Reflective encoders Radiation detectors Baggage inspection equipment X-ray source Low energy X-ray High energy Inspected object X-ray Code wheel Light emitter ( LED) Conveyor Si PIN photodiode with scintillator Photosensor ( Si photodiode). KAPDC0103EA KSPDC0077EA Image example Si photodiode with scintillator KAPDC0104EA KSPDC0081EA KSPDC0078EA. Si photodiode arrays are used in optical encoders. Si PIN photodiodes with a scintillator are used in detectors Si PIN photodiodes with a scintillator are used in dual that measure radiation levels of gamma-rays and other rays.

3 Energy imaging to obtain information about an object such as its type and thickness. 3 / 45. Application Related Related Packages Home examples Packages Lineup products information Package examples Hamamatsu offers a diverse lineup of packages to meet a wide ranging market needs. [ Metal ] [ Ceramic ] [ Plastic ] [ Glass epoxy ]. [ With BNC connector ] [ Surface mount type ] [ With scintillator ] [ CSP ]. Package examples Mounting technology 4 / 45. Application Related Related Packages Home examples Packages Lineup products information Photodiode chip Photodiode chip Mounting technology We have realized mounting technology for miniaturization of elements and for direct coupling of a photodiode to ASIC, amplifier chip, etc. Bump Bump CSP (chip size package). Package mounting surface Flip-chip bonding CSP (chip size package). Package mounting surface (a) Mounting to a board (b) Mounting to an amplifier Photodiode chip Photodiode chip Photodiode chip Bump Bump Photodiode chip Bump Underfill resin Package mounting surface Bump ASIC.

4 ASIC. (c) Mounting an amplifier to a chip Photodiode photodiode chip Amp chip Amp chip Substrate (PWB). Bump Bump Bump Solder ball ASIC. Photodiode chip Photodiode chip Amp chip KSPDC0060EB KSPDC0065EC. Bump Package examples Mounting technology 5 / 45. KSPDC0060EB. Application Related Related Home Packages Lineup examples products information Lineup Type Features For UV to near IR range For UV to near IR range (IR sensitivity suppressed type). For precision photometry Low-light-level detection with high sensitivity and low noise For UV monitor For visible to near IR range For general photometry/ Low-light-level detection with high sensitivity and low noise For visible For visible to near IR range visible range It is also available with a visual-sensitive compensation filter. High-speed response Cutoff frequency: 1 GHz or more Cutoff frequency: 100 MHz to less than 1 GHz Achieves excellent response characteristics by applying reverse voltage.

5 Si PIN photodiode Cutoff frequency: 10 MHz to less than 100 MHz Products suitable for optical fiber communications and optical pickups Products with multiple photosensitive areas suitable for light position detection, Multi-element Segmented type Si PIN photodiodes One-dimensional photodiode arrays spectrophotometers, etc. High-speed response Si PIN photodiodes Segmented type Si photodiodes Surface mount type Surface mountable chip carrier package or plastic package type Small plastic package Si photodiodes Small plastic package Si PIN photodiodes With preamp Si photodiodes with preamp Built-in preamplifier is resistant to external noise and enables compact circuit design. TE-cooled type TE-cooled Si photodiodes Achieves excellent S/N due to built-in TE-cooler Si PIN photodiodes with scintillator Large-area Si PIN photodiodes Products combining a Si photodiode with a scintillator, suitable for X-ray baggage For X-ray detection Large-area Si PIN photodiodes for direct radiation detection inspection and non-destructive inspection RGB color sensors Violet and blue sensitivity enhanced type For vacuum ultraviolet (VUV) For monochromatic light detection Special applications For YAG laser detection For electron beam detection photodiodes suitable for specific applications PWB package type with leads CSP type 6-element array for encoder 6 / 45.

6 Application Related Related Si photodiodes for precision photometry Home examples Packages Lineup products information Spectral response For UV to near IR range They are suitable for low-light-level detection in analysis and the like. [ S1336-BQ, S1337-BQ ]. (Typ. Ta=25 C). (Typ. Ta=25 C). Photosensitivity Dark current Terminal QE=100%. Spectral Photosensitive Photosensitivity (A/W). (A/W) VR=10 mV capacitance Type no. response range area Package Photo max. VR=0 V, f=10 kHz =200 nm =960 nm (nm) (pA) (pF) (mm). S1336-18BQ* 190 to 1100 20 20 TO-18 S1336-BK, S1337-BR. S1336-18BK 320 to 1100 - S1336-5BQ* 190 to 1100 30 65 S1336-5BK 320 to 1100 - 0. TO-5 190 400 600 800 1000. S1336-44BQ* 190 to 1100 1 50 150 Wavelength (nm). S1336-44BK 320 to 1100 - 2 KSPDB0262EF. S1336-8BQ* 190 to 1100 100 380 TO-8. S1336-8BK 320 to 1100 - [ S1336-BK, S1337-BR ]. (Typ. Ta=25 C). S1337-16BQ* 190 to 1100 50 S1337-16BR 340 to 1100 - 65.

7 S1337-33BQ* 190 to 1100 KSPDB0262. Photosensitivity (A/W). 30 QE=100%. S1337-33BR 340 to 1100 - Ceramic S1337-66BQ* 190 to 1100 S1337-BR. 100 380 S1337-66BR 340 to 1100 - S1336-BK. S1337-1010BQ* 190 to 1100 200 1100 10 10. S1337-1010BR 340 to 1100 - * Refer to Precautions against UV light exposure ( ). 0. 190 400 600 800 1000. Wavelength (nm). KSPDB0309EA. 7 / 45. Application Related Related Si photodiodes for precision photometry Home examples Packages Lineup products information Spectral response For UV to near IR range They are suitable for low-light-level detection in analysis and the like. [ S1337-21 ]. (Typ. Ta=25 C). (Typ. Ta=25 C) Photosensitivity Dark current Terminal QE=100%. Spectral Photosensitive Photosensitivity (A/W). (A/W) VR=10 mV capacitance Type no. response range area Package Photo max. VR=0 V, f=10 kHz =200 nm =960 nm (nm) (pA) (pF) (mm). Ceramic S1337-21*1 190 to 1100 500 4000 18 18 Spectral response (unsealed).

8 0. 190 300 400 500 600 700 800 900 1000 1100. 2. Wavelength (nm). 2 S2281*1 *2 KSPDB0421EB. With BNC [ S2281 series ]. 190 to 1100 500 1300. connector (Typ. Ta=25 C). S2281-04*1 *2 QE=100% KSPDB0421EB. Photosensitivity (A/W). *1: Refer to Precautions against UV light exposure ( ).. *2: Weak photocurrent can be amplified with low noise by connecting to the photosensor amplifier C9329-01 (using BNC-BNC coaxial cable E2573). S2281. S2281/-04. 0. 190 300 400 500 600 700 800 900 1000 1100. Wavelength (nm). KSPDB0422EA. 8 / 45. Application Related Related Si photodiodes for precision photometry Home examples Packages Lineup products information For UV to near IR range These Si photodiodes have suppressed sensitivity in the infrared range and are suitable for low-light-level detection in analysis and Spectral response [ S1226-BQ, S1227-BQ, S2281-01 ]. IR sensitivity suppressed type the like.

9 (Typ. Ta=25 C). (Typ. Ta=25 C) QE=100%. Photosensitivity Dark current Terminal Spectral Photosensitive Photosensitivity (A/W). (A/W) VR=10 mV capacitance Type no. response range area Package Photo S2281-01. max. VR=0 V, f=10 kHz =200 nm =720 nm (nm) (pA) (pF) (mm). S1226-18BQ* 190 to 1000 2 35 TO-18. S1226-18BK 320 to 1000 - S1226-BQ, S1557-BQ. S1226-5BQ* 190 to 1000 5 160 S1226-5BK 320 to 1000 - 0. TO-5 190 400 600 800 1000. S1226-44BQ* 190 to 1000 10 500 Wavelength (nm). S1226-44BK 320 to 1000 - KSPDB0423EA. S1226-8BQ* 190 to 1000 20 1200 TO-8. S1226-8BK 320 to 1000 - [ S1226-BK, S1227-BR ]. (Typ. Ta=25 C). S1227-16BQ* 190 to 1000 170 S1227-16BR 340 to 1000 - QE=100%. 5. S1227-33BQ* 190 to 1000 S1227-BR. 160 KSPDB0423. Photosensitivity (A/W). S1227-33BR 340 to 1000 - Ceramic S1227-66BQ* 190 to 1000 20 950 S1227-66BR 340 to 1000 - S1227-1010BQ* 190 to 1000 50 3000 10 10. S1227-1010BR 340 to 1000 - S1226-BK.

10 With BNC 0. S2281-01* 190 to 1000 300 3200 190 400 600 800 1000. connector Wavelength (nm). * Refer to Precautions against UV light exposure ( ).. KSPDB0308EA. 9 / 45. Application Related Related Si photodiodes for precision photometry Home examples Packages Lineup products information The S12698 series have a structure that does not use resin and are types that have achieved Spectral response For UV monitor high reliability against UV light. The S15289-33 is a back-illuminated type photodiode designed to minimize dead space around the product. Multiple units can be arranged in a tile format. [ S12698 series, S15289-33 ]. (Typ. Ta=25 C). S15289-33. (Typ. Ta=25 C) QE=100%. Dark current Photosensitivity (A/W). Photosensitivity VR=10 mV Photosensitive area Type no. = p Package Photo max. (A/W) (pA) (mm). S12698* TO-18 10 S12698 series TO-18 Changes in spectral response due to UV light irradiation S12698-07.