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低密度実装を可能にする ... - semicon.jeita.or.jp

1 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( ) 2011 STRJ 2011 3 2 ( ) STRJ WG7 ( ) 2 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( ) 2011 6 2011 7 2012 2 ASET 2011 10 2011 STRJ WG7 3 Work in Progress - Do not publishSTRJ WS.

Work in Progress - Do not publish STRJ WS: March 2, 2012, WG7 (実装) 2 リーダ: 中島宏文(ルネサスエレクトロニクス) サブリーダ: 今村和之(富士通セミコンダクター)

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Transcription of 低密度実装を可能にする ... - semicon.jeita.or.jp

1 1 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( ) 2011 STRJ 2011 3 2 ( ) STRJ WG7 ( ) 2 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( ) 2011 6 2011 7 2012 2 ASET 2011 10 2011 STRJ WG7 3 Work in Progress - Do not publishSTRJ WS.

2 March 2, 2012, WG7 ( )Application(Products)PWBP assiveComponentsDesignTESTI nter-connectLitho PIDS FEP ES&HM&SMET ERD ERM FI AssemblyEquipmentsPackageMEMSS emiconductor Technology Roadmap committee (STRJ)Semiconductor Technology Roadmap committee (STRJ)Japan Jisso Technology Roadmap committee (JJTR)Japan Jisso Technology Roadmap committee (JJTR)JEITAJEITA JJTR WG3 STRJ WG7 SeedsNeedsSTRJ WG7 4 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( ) mobilityHarshenvironmentHighHighAutomoti ve electronicsCar navigation CellphoneNote PC Mobile digital imaging Wearable Home digital AV 2011 5 Work in Progress - Do not publishSTRJ WS.

3 March 2, 2012, WG7 ( ) 11 WGWG (STRJ) (JJTR)2011 ITRS 2011 2012 1 ITRS 2010 STRJ ITRS ITRS A&P TWG ECTC ITRS A&P TWG ITRS A&P TWG ITRS Jan. 2011 IITRS 2011 2011 5 2011 WG JJTR ASET TSV WG5 LED IMSI WLP Mar. 2011 Apr. 2011 May, 2011 July, 2011 Aug. 2011 Oct. 2011 Dec. 2011 Feb. 2011 Feb. 2012 2013 ITRS2011 6 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( )1) ITRS 2011 2011 8 1 SiP 2) ( ) 8 3 ITRS Package Workshop ITRS 3 STRJ 4 jeita 4 20 31 3) WG 3 LSI ( ) IMSI ( LED ( ) 3D-TSV ASET (.

4 ASET) 11 WGWG ITRS 2011 Package 7 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( ) 2007 2011 8 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( ) Tr Cu (1)(2) Ultra Low k Low k (Chip-package interaction) (3) TSV TSV (4) (5) T/C (6)

5 Ta=175 C (6)9 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( )(1) (1) / 10 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( ) Tables treat SiTables treat Si--Intermediate, SiIntermediate, Si--base and glass base and glass Interposers separatelyInterposers separatelyTSV Key Technical Parameters for InterposersIntermediate Silicon InterposerYear of Production201120122013 Minimum TSV pitch (um) TSV diameter (um) (D) maximum aspect ratio (L/D)101010 Minimum Si Wafer final thickness (um)

6 403020 TSV Methods and Materialssee table AP14 Via fill methodCu ECD FillCu ECD Fill Cu ECD FillTSVTSV metalCuCuCuConstruction compatibilitysee interposer cross-sections Alignment requirement (um) (assume 25% exit dia) of RDL Layers Front side222 Number of RDL Layers Back side2223D IntegrationInterconnect methodsCu-Cu, Cu-Sn-Cu, Cu-Ni/Au-SnAg, AuSnCu-Cu, Cu-Sn-Cu, Cu-Ni/Au-SnAg, AuSnCu-Cu, Cu-Sn-Cu, Cu-Ni/Au-SnAg, AuSn11 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( )(2) (2) CuCu Sn95Pb bumpSnAgCu/SnAg bumpCu pillar + SnAg cap 130um ( 12 Work in Progress - Do not publishSTRJ WS.)

7 March 2, 2012, WG7 ( ) CuCu 0501001502002502009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 Bump pitch (um)Low costHandheldHighperformance Peripheral Solder bumpCu pillar 2011 13 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( ) Capillary underfill NCP/ACP NCF/ACF No flow Underfill Mold underfill Wafer-level underfill Pre-applying methodUnderfillSolder bumpSolderSubstrateUnderfillAu bumpSolderSubstratemetal fillerUnderfillSubstrateBumpUnderfillSub strateBumpSolder bumpNCF/NCPAu-solderACF/ACPS ubstrateSolder

8 UnderfillCu-solderCu pillar Wafer- level underfill 14 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( )(3) (3) Low k Low k (CPI)(CPI)Cu low k 15 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( )Low k Low k (white bump)(white bump) FEMFEM Energy release rate (ERR) 16 Work in Progress - Do not publishSTRJ WS.

9 March 2, 2012, WG7 ( )(4)(4) TSVTSV Cu-TSV XY TSV 2 Keep out zone TSV TSV Z Cu-Cu TSV drtg r t Cu-TSV Tr Tr TSV SiliconCu-TSV17 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( )(5)(5) Source: Dan Tracy, Semi, Semicon Taiwan Cost RatioAu wirePd-CuwirePure Cuwire 7 3 18 Work in Progress - Do not publishSTRJ WS.

10 March 2, 2012, WG7 ( )StaggeredIn-line 2016 (5)(5) 010203040506070201020122014201620182020A u wire, singleCu wire, singleAu wire, staggeredCu wire, staggeredAl splashSource: JJTR 2011 19 Work in Progress - Do not publishSTRJ WS: March 2, 2012, WG7 ( )(6)(6) 1. Power Train1. Power TrainEngine/motorAT controlBattery 5.


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