Transcription of SEMICONDUCTOR DEVICE PHYSICS AND DESIGN
1 SEMICONDUCTOR DEVICE PHYSICS AND DESIGNS emiconductor DEVICE Physicsand DesignUMESH K. MISHRAU niversity of California, Santa Barbara, CA, USAandJASPRIT SINGHThe University of Michigan, Ann Arbor, MI, USAbyA Catalogue record for this book isavailable from the Library of 978-1-4020-6480-7 (HB)ISBN 978-1-4020-6481-4 (e-book)Published by Springer, Box 17, 3300 AA Dordrecht, The on acid-free paperAll Rights Reservedc 2008 SpringerNo part of this work may be reproduced, stored in a retrieval system, or transmitted in any formor by any means, electronic, mechanical, photocopying, microfilming, recording or otherwise,without written permission from the Publisher, with the exception of any material suppliedspecifically for the purpose of being entered and executed on a computer system.
2 For exclusiveuse by the purchaser of the book is dedicated to our parentsSrinibas Mishra and Sushila DeviGurcharn Singh and Gursharan KaurCONTENTSA cknowledgementsxiiPrefacexiiiIntroductio nxx1 Structural Properties of INTRODUCTION .. CRYSTALSTRUCTURE .. Lattice Types.. BasicCrystalStructures .. to Denote Planes and Points in a Lattice: Miller Indices .. Structures: Superlattices and Quantum Wells.. : Ideal Versus Real.. Defects .. LATTICEMISMATCHEDSTRUCTURES .. STRAINEDEPITAXY:STRAINTENSOR .. FURTHERREADING .. 272 Electronic levels in INTRODUCTION .. IN AN ATTRACTIVE POTENTIAL:BOUND levels in a hydrogen atom.. in a quantum well .. IN CRYSTALLINE SOLIDS.
3 In a periodic potential: Bloch theorem .. OF STATES:DISTRIBUTIONFUNCTION .. ElectronsandHoles .. OF SOME IMPORTANTSEMICONDUCTORS .. and indirect MOBILECARRIERS .. Mobileelectronsinmetals .. and holes in semiconductors .. OF SEMICONDUCTORS.. IN POLAR MATERIALS.. TAILORING ELECTRONIC Electronic properties of alloys .. Electronic properties of quantum wells .. STRAINED HETEROSTRUCTURES .. TECHNOLOGY PROBLEMS .. 903 Charge transport in INTRODUCTION .. CHARGETRANSPORT:ANOVERVIEW .. AND SCATTERING .. Mechanics and Scattering of electrons.. UNDER AN ELECTRIC FIELD .. electric field relations in semiconductors.
4 SOMEIMPORTANTISSUESINTRANSPORT .. CARRIERTRANSPORTBYDIFFUSION .. Driftanddiffusiontransport:Einstein INJECTION AND QUASI-FERMI LEVELS .. Distributions .. GENERATION AND RECOMBINATION .. Absorption and Emission in Read Hall Statistics .. CONTINUITY(The law of conservationof electrons and holes separately).. PROBLEMS ..1454 Junctions in .. UNDER BIAS.. DriftandDiffusionCurrentsintheBiasedDiod e .. and Majority Currents in thep-nDiode .. NarrowDiodeCurrent .. DIODES: CONSEQUENCES OF DEFECTS AND CARRIER GENER-ATION .. Currents.. ReverseBiasCharacteristics .. EFFECTS IN ForwardBias:HighInjectionRegion .. Bias: Impact Ionization .. Breakdown in ap-njunction.
5 Bias: Zener Breakdown .. of p-n Solar Cell and uses of diode non-linearity (Mixers, Multipliers, Power Detectors) . PowerDevices .. emitting diode (LED) .. EmissionEnergy .. Injection and Spontaneous PROBLEMS .. DESIGN PROBLEMS ..2145 SEMICONDUCTOR INTRODUCTION .. INTERCONNECTS .. SEMICONDUCTOR JUNCTION:SCHOTTKYBARRIER .. Barrier Voltage Flow across a schottky Barrier: Thermionic of schottky SEMICONDUCTOR JUNCTIONS .. Insulator-Silicon .. HETEROJUNCTIONS .. Quasi-electricfields .. FURTHERREADING ..2456 Bipolar Junction INTRODUCTION .. CHARACTERISTICS: CURRENT-VOLTAGERELATION .. CurrentFlowinaBJT .. : The Ebers-Moll Model.
6 DESIGN AND DEVICE PERFORMANCE DESIGN LIMITATIONS: NEED FOR Generalized Moll-Ross Relationship .. much do we need?.. EFFECTS IN REAL DEVICES .. HighInjection:TheKirkEffect .. HighInjection:ThermalEffects .. Width Modulation: The Early Effects in the Base: Nonuniform Breakdown .. LowInjectionEffectsandCurrentGain .. PROBLEMS .. FURTHERREADING ..3037 Temporal Response Of Diodes and Bipolar INTRODUCTION .. AND SWITCHING OF AP-NDIODE: AC RESPONSE .. Equivalent Circuit of characteristics of Response of a schottky Diode .. JUNCTION TRANSISTORS:ACHARGE-CONTROLANALYSIS .. Voltages at Saturation .. Transistor Small-Signal Equivalent Circuit .. and Phase Shift of a Traveling Electron Wave.
7 Signal Figures of Merit .. TRANSISTORS: A Bipolar Technology .. InGaAs/InAlAsandInGaAs/InPHBTs .. PROBLEMS ..3558 Field Effect INTRODUCTION .. JFETANDMESFET:CHARGECONTROL .. CHARACTERISTICS.. Nearly Universal Model for FET Behavior : The Saturation Regime .. CHARGECONTROLMODELFORTHEMODFET .. Efficiency .. MATERIALS AND STRUCTURES .. PolarMaterials .. PolarHFETS tructures .. +Cap Layers .. 2 DEG Conductivity .. to Substrate Recess DESIGN .. of two disparate material systems:AlInAs/GaInAsandAlGaN/GaN .. in state-of-the-art SMALLANDLARGESIGNALISSUESANDFIGURESOFMER IT .. Characteristics .. limit .. of operation of transistor power amplifiers and necessary on DEVICE technology and circuits.
8 PROBLEMS .. DESIGN PROBLEMS ..4329 Field Effect Transistors: INTRODUCTION .. MOSFET:DEVICESANDIMPACT .. MOSFETOPERATION .. Current-VoltageCharacteristics .. Bias Effects .. and Enhancement MOSFETs .. ComplementaryMOSFETs .. ISSUES AND FUTURE CHALLENGES IN REAL MOSFETS . Variation with Gate Effects in Short-Channel MOSFETs .. Bipolar Transistors and Latch-up in .. PROBLEMS ..48710 Coherent Transport and Mesoscopic .. ZENER-BLOCHOSCILLATIONS .. QUANTUM INTERFERENCE Conductance Fluctuations and Coherent Transport .. Coulomb Blockade Effects .. MAGNETIC PROBLEMS .. Further List of Symbols511B Boltzmann Transport BOLTZMANNTRANSPORTEQUATION.
9 Evolution offk(r).. Field-Induced Evolution offk(r).. Evolution offk(r).. Density of States529D Important Properties of Semiconductors535E Beyond the Depletion Approximation544F DESIGN of Graded Heterojunctions for Bipolar Transistors548 Index552 ACKNOWLEDGEMENTSW riting a book on SEMICONDUCTOR DEVICE PHYSICS and DESIGN is never complete and proba-bly never completely satisfying. The field is vast and diverse and it is difficult to decide whatshould be included in the book and what should not be. Of course it is always a good idea forauthors to not discuss areas that they are unfamiliar with and that helped narrow the scope ofthis book down greatly!! In all seriousness the flow and content of this book is a consequenceof the classes that we have taught at UC Santa Barbara and The University of Michigan andreflects what we believe can be taught in a manner that emphasizes physical understanding withan appropriate amount of rigor.
10 At UCSB Prof Kroemer had developed a two-quarter sequenceclass on DEVICE PHYSICS which I (Umesh Mishra) took over when I arrived at UCSB in developed the class over the past 15 years using his notes as a foundation and the new con-tent is reflected in this book. I am grateful to Prof Kroemer for allowing me to include partsof his notes and homework problems in this book. Prof Mark Rodwell contributed to under-standing that the answer to the question How much do we need is application Steve Long and Prof Rakesh Lal helped with the diode- applications section. Prof TomasPalacios of MIT contributed to the AlGaN/GaN HEMT description. Dr Karthik Krishnamurthy(RFMD) allowed use of his descriptions of classes of FET amplifiers.
