Transcription of SPECIAL REPORTS 半導体リソグラフィ技術の動向と東芝の …
1 SPECIAL REPORTS .. Trends in Semiconductor lithography Technologies and Toshiba's Approach . HIGASHIKI Tatsuhiko ONISHI Yasunobu .. OPC Optical Proximity Correction DFM Design for Manufacturability .. lithography technology, which transfers a device circuit pattern printed on a mask to a silicon wafer using an exposure tool, plays a critical role in the semiconductor device manufacturing process and is continuously evolving to realize the shrinkage of semiconductor devices. As optical lithography , the mainstream technology, will reach the theoretical limit of resolution, a paradigm shift to next-generation lithography technologies is taking place in response to the need for further reductions in the size and cost of semiconductor devices. Toshiba is not only developing individual element technologies, including exposure tool technologies, mask technologies, clean track technologies, optical proximity correction (OPC) technologies, and design for manufacturability (DFM) technologies, but has also been achieving world-class results in developing the total optimization of these element technologies utilizing the full spectrum of its capabilities as an integrated device manufacturer from design to production.
2 1 .. OPC Optical Proximity 15 . Correction . DFM Design for Manufacturability .. 2 2012 .. ArF 193 nm .. ArF .. Rayleigh .. = sin .. = k1 .. Numerical = sin . Aperture . k1 k1 NAND . 1 1 k1 . 21 .. 193 nm k1. k1 ArF . 1970 43 nm .. 1/2 . g 436 nm i k1 EUV . 365 nm . 1/4 . KrF 248 nm k1 1/4 .. OPC.. OPC. OPC DFM.. DFM . OPC DFM .. 1 .. 2 LSI . Position of lithography process in semiconductor manufacturing flow . 3.. 1 .. LSI . OPC. 4 .. 3 .. OPE Optical Proximity . Effect .. OPC .. 2 OPC . Configuration of exposure process . OPC.. DFM .. 5 . 3 . Configuration of mask fabrication process .. DFM . 1 . 1 DFM . 4 2012 .. OPC OPC .. 1/2 .. 2 .. 4 OPC OPE 2 . Flow of OPC .. TAT. Turn Around Time . 250 nm 250 nm 90 nm .. + OPC + OPC.. DFM.. OPE .. OPC .. nm . EUV Extreme Ultraviolet . 5 DFM EUV .. Necessity of DFM. EUV 7 .. 2 . 1/2 .. EUV . DFM .. 6 .. 42 nm 1 . 1 3.
3 5.. P P P.. ED 2005 83p . SEM . 2006 243p . P/2 P/2 P/2 P/2 P/2 P/2. SEM . P . SEM . 6 .. Flow of spacer double patterning .. 7 EUV EUV .. Configuration of extreme ultraviolet (EUV) lithography exposure tool . HIGASHIKI Tatsuhiko, .. Device Process Development Center . 30 .. ONISHI Yasunobu . DSA Directed Self Assembly .. Device Process Development Center 6 2012.
