TISP4xxxM3BJ Overvoltage Protector Series - Bourns

1 TISP4xxxM3BJ Overvoltage Protector Series TISP4070M3BJ THRU TISP4115M3BJ, TISP4125M3BJ THRU TISP4220M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR Overvoltage PROTECTORSITU-T rating ..4 kV 10/700, 100 A 5/310 Ion-Implanted Breakdown RegionPrecise and Stable VoltageLow Voltage Overshoot under SurgeThese devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment ( between the Ring and Tip wires for telephones and modems).

2 Combinations of devices can be used for multi-point protection ( 3-point protection between Ring, Tip and Ground).The Protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping untilthe voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes thecurrent resulting from the Overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent latchup as the diverted current (BO)V 40705870 40806580 40957595 411590115 4125100125 4145120145 4165135165 4180145180 4200155200 4220160220 4240180240 4250190250 4265200265 4290220290 4300230300 4350275350 4360290360 4395320395 4400300400 Low Differential Capacitance.

3 39 pF max..UL Recognized Component 12T(A)R(B)MDXXBGETRSD4 XAAT erminals T and R correspond to the alternative line designators of A and B Wave ShapeStandardITSPA2/10 sGR-1089-CORE3008/20 sIEC 61000-4-522010/160 sFCC Part 6812010/700 sITU-T sFCC Part 687510/1000 sGR-1089-CORE50 DevicePackageCarrierTISP4xxxM3 BJBJ (J-Bend DO-214AA/SMB)Embossed Tape Reeled TISP4xxxM3 BJR-SInsert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc. Order AsSMBJ Package (Top View)Device SymbolDescriptionHow to OrderAgency RecognitionDescriptionULFile Number: E215609 NOVEMBER 1997 REVISED JULY 2019*RoHS Directive 2015/863, Mar 31, 2015 and Annex.

4 Specifications are subject to change without should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at Cancer and Reproductive TISP4xxxM3BJ range consists of nineteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They areguaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protectiondevices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack.

5 For alternative voltage and holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000 TISP4xxxH3BJ Series is available. TISP4xxxM3BJ Overvoltage Protector SeriesRatingSymbolValueUnitRepetitive peak off-state voltage, (see Note 1) 4070 4080 4095 4115 4125 4145 4165 4180 4200 4220 4240 4250 4265 4290 4300 4350 4360 4395 4400 VDRM 58 65 75 90 100 120 135 145 155 160 180 190 200 220 230 275 290 320 300 VNon-repetitive peak on-state pulse current(see Notes 2, 3 and 4)ITSPA2/10 s(G R-1089-CORE, 2/10 svoltage wave shape)3008/20 s(IEC 61000-4-5, combination wave generator, voltage, 8/20 current)22010/160 s(FCC Part 68, 10/160 s voltage wave shape)1205/200 s(VDE 0433, 10/700 s voltage wave shape) s(I3124, s voltage wave shape)

6 1005/310 (ITU-T , 10/700 s voltage wave shape)1005/310 s(FTZ R12, 10/700 s voltage wave shape)10010/560 s(FCC Part 68, 10/560 s voltage wave shape)7510/1000 s(G R-1089-CORE, 10/1000 s voltage wave shape)50 Non-repetitive peak on-state current(see Notes 2, 3 and 5) ms (50 Hz) full sine ms ( 60 Hz) full sine wave1000s 50Hz/60Hz rate of rise of on-state current,Exponential current ramp, Maximum ramp value < 100 AdiT/dt300A/ sJunction temperatureTJ-40 to +150 CStorage temperature rangeTstg-65 to +150 CNOTES: Applications Information and Figure 11 for voltage values at lower Initially, the TISP4xxxM3BJ must be in thermal equilibrium with TJ=25 C.

7 Surge may be repeated after the TISP4xxxM3BJ returns to its initial Applications Information and Figure 12 for current ratings at other environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiringtrack widths. See Figure 9 for the current ratings at other durations. Derate current values at %/ C for ambient temperaturesabove 25 (Continued)Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)NOVEMBER 1997 REVISED JULY 2019 Specifications are subject to change without should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at TISP4xxxM3BJ Overvoltage Protector SeriesParameterTest ConditionsMinTypMaxUnitIDRMR epetitive peak off-state currentVD = VDRMTA = 25 CTA = 85 C 5 10 AV(BO)Breakover voltagedv/dt = 250V/ms,RSOURCE= 300 4070 4080 4095 4115 4125 4145 4165 4180 4200 4220 4240 4250 4265 4290 4300 4350 4360 4395 4400 70 80 95 115 125 145 165 180 200 220 240 250 265 290 300 350 360 395 400VV(BO)

8 Impulse breakover voltagedv/dt 1000V/ s, Linear voltage ramp, Maximum ramp value= 500 Vdi/dt = 20A/ s, Linear current ramp, Maximum ramp value= 10A 4070 4080 4095 4115 4125 4145 4165 4180 4200 4220 4240 4250 4265 4290 4300 4350 4360 4395 4400 78 88 102 122 132 151 171 186 207 227 247 257 272 298 308 359 370 405 410VI(BO)Breakover currentdv/dt = 250V/ms,RSOURCE= 300 voltageIT= 5 A, tW= 100 s 3 VIHH olding currentIT= 5A, di/dt = +/-30mA/ms rate of rise of off-state voltageLinear voltage ramp, Maximum ramp value < 5kV/ sIDOff-state currentVD= 50 VTA = 85 C 10 Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)NOVEMBER 1997 REVISED JULY 2019 Specifications are subject to change without should verify actual device performance in their specific applications.

9 The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at TISP4xxxM3BJ Overvoltage Protector SeriesCoffOff- state capacitancef=1 MHz,Vd=1V rms, VD=0, f=1 MHz,Vd=1V rms, VD=-1Vf=1 MHz,Vd=1V rms, VD=-2V f=1 MHz,Vd=1V rms, VD=-50Vf=1 MHz,Vd=1V rms,VD= -100V(see Note 6)4070 thru 4115 4125 thru 4220 4240 thru 4400 4070 thru 4115 4125 thru 4220 4240 thru 4400 4070 thru 4115 4125 thru 4220 4240 thru 4400 4070 thru 4115 4125 thru 4220 4240 thru 4400 4125 thru 4220 4240 thru 4400836250785645725242362619211510074609 467548762504431222518pFNOTE6:To av oid possible voltage clipping, the 4125 is tested with VD= ConditionsMinTypMaxUnitPar ameterTest ConditionsMinTypMaxUnitR JAJunction to free air thermal resistance EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 C, (see Note 7)115 C/W265mm x 210mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 C52 NOTE7.

10 EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track Characteristics, TA = 25 C (Unless Otherwise Noted)Thermal CharacteristicsNOVEMBER 1997 REVISED JULY 2019 Specifications are subject to change without should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at TISP4xxxM3BJ Overvoltage Protector SeriesFigure 1. Voltage-Current Characteristic for T and R TerminalsAll Measurements are Referenced to the R Terminal -vVDRMIDRMVDIHITVTITSMITSPV(BO)I(BO)IDQu adrant I ISwitchingCharacteristic+v+iV(BO)I(BO)VD IDIHITVTITSMITSP-iQuadrant IIIS witchingCharacteristicPMXXAABVDRMIDRMP arameter Measurement InformationNOVEMBER 1997 REVISED JULY 2019 Specifications are subject to change without should verify actual device performance in their specific applications.