Transmissive Optical Sensor with Phototransistor …

1 TCST1103, TCST1202, Semiconductors Rev. , 24-Aug-111 Document Number: 83764 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Optical Sensor with Phototransistor OutputDESCRIPTIONThe TCST1103, TCST1202, and TCST1300 are transmissivesensors that include an infrared emitter and Phototransistor ,located face-to-face on the Optical axes in a leaded packagewhich blocks visible light. These part numbers includeoptions for aperture Package type: leaded Detector type: Phototransistor Dimensions (L x W x H in mm): x x Gap (in mm): Typical output current under test: IC = 4 mA(TCST1103) Typical output current under test: IC = 2 mA (TCST1202) Typical output current under test: IC = mA (TCST1300) Daylight blocking filter Emitter wavelength.

2 950 nm Lead (Pb)-free soldering released Compliant to RoHS Directive 2002/95/EC and inaccordance to WEEE 2002/96/ECAPPLICATIONS Optical switch Photo interrupter Counter EncoderNote Conditions like in table basic characteristics/couplerNote MOQ: minimum order quantity19180_519180_3 Top view++ "PRODUCT SUMMARYPART NUMBERGAP WIDTH(mm)APERTURE WIDTH (mm)TYPICAL OUTPUT CURRENT UNDER TEST (1)(mA)DAYLIGHT BLOCKING FILTER INFORMATIONORDERING CODEPACKAGINGVOLUME (1)REMARKSTCST1103 TubeMOQ: 1020 pcs, 85 pcs/tubeWithout mounting flangeTCST1202 TubeMOQ: 1020 pcs, 85 pcs/tubeWithout mounting flangeTCST1300 TubeMOQ: 1020 pcs, 85 pcs/tubeWithout mounting flangeABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITCOUPLERT otal power dissipationTamb 25 CPtot250mWAmbient temperature rangeTamb- 55 to + 85 CStorage temperature rangeTstg- 55 to + 100 CSoldering temperatureDistance to package: 2 mm; t 5 sTsd260 C TCST1103, TCST1202, Semiconductors Rev.

3 , 24-Aug-112 Document Number: 83764 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MAXIMUM RATINGS Fig. 1 - Power Dissipation Limit vs. Ambient TemperatureINPUT (EMITTER)Reverse voltageVR6 VForward currentIF60mAForward surge currenttp 10 sIFSM3 APower dissipationTamb 25 CPV100mWJunction temperatureTj100 COUTPUT (DETECTOR)Collector emitter voltageVCEO70 VEmitter collector voltageVECO7 VCollector peak currenttp/T = , tp 10 msICM200mAPower dissipationTamb 25 CPV150mWJunction temperatureTj100 CABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)

4 PARAMETERTEST CONDITIONSYMBOLVALUEUNIT0 0 100 200 300 400 95 11088 P - Power Dissipation (mW) T amb - Ambient Temperature ( C) Coupled device PhototransistorIR-diode150 120 90 60 30 BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST transfer ratioVCE = 5 V, IF = 20 mATCST1103 CTR1020%TCST1202 CTR510% currentVCE = 5 V, IF = 20 emitter saturation voltageIF = 20 mA, IC = 1 = 20 mA, IC = = 20 mA, IC = , path of the shutter crossing the radiant sensitive zoneICrel = 10 % to 90 % TCST1103, TCST1202, Semiconductors Rev.

5 , 24-Aug-113 Document Number: 83764 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 2 - Test Circuit for ton and toff Fig. 3 - Switching TimesBASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Fig. 4 - Forward Current vs. Forward Voltage Fig. 5 - Relative Current Transfer Ratio vs. Ambient TemperatureINPUT (EMITTER)Forward voltageIF = 60 capacitanceVR = 0 V, f = 1 MHzCj50pFOUTPUT (DETECTOR)Collector emitter voltageIC = 1 mAVCEO70 VEmitter collector voltageIE = 10 AVECO7 VCollector dark currentVCE = 25 V, IF = 0 A, E = 0 lxICEO100nASWITCHING CHARACTERISTICSTurn-on timeIC = 2 mA, VS = 5 V,RL = 100 (see figure 2)ton10 sTurn-off timeIC = 2 mA, VS = 5 V,RL = 100 (see figure 2)toff8 sBASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

6 PARAMETERTEST IChannel II20688+ 5 VICadjusted by IFIF0 IFRG= 50 tptp= 1 msT= 20 Oscilloscope50 100 RL 1 M CL 20 pFtptt0010 %90 %100 %trtdtontstftoffIFICtpPulse durationtdDelay timetrRise timeton(= td + tr) Turn-on timetsStorage timetfFall timetoff(= ts + tf)Turn-off time96 - Forward Voltage (V)96 11862IF - Forward Current (mA) 25 - Relative Current Transfer RatiorelT amb - Ambient Temperature ( C) 95 11089 V CE= 5 VI F = 20 mA10075 50 25 0 TCST1103, TCST1202, Semiconductors Rev. , 24-Aug-114 Document Number: 83764 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

7 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 6 - Collector Dark Current vs. Ambient Temperature Fig. 7 - Collector Current vs. Forward Current Fig. 8 - Collector Current vs. Collector Emitter Voltage Fig. 9 - Current Transfer Ratio vs. Forward Current Fig. 10 - Turn-off/Turn-on Time vs. Collector Current Fig. 11 - Relative Collector Current vs. Displacement0 1 10100 1000 10 000I - Collector Dark Current (nA)CEO T amb - Ambient Temperature ( C) 95 11090V CE= 25 V I F = 0 A100755025 1 10 I F - Forward Current (mA) 96 12066 VCE= 5 VI - Collector Current (mA) C 10010 1 1 10 V CE- Collector Emitter Voltage (V)96 12067 I - Collector Current (mA) C20 mA 10 mA 5 mA 2 mA 1 mA I F = 50 mA100 10 1 1 10 100 I F - Forward Current (mA) 96 12068 V CE= 5 VCTR - Current Transfer Ratio (%) 10010 1 0 I C - Collector Current (mA)

8 95 11086 t / t - Turn on/Turn off Time ( s) off on Non saturatedoperation V S = 5 V R L = 100 t on 0 5 10 15 20 t off 108642 0 10 20 30 40 50 60 70 80 90 100 110 - s - Displacement (mm) 96 12005I - Relative Collector CurrentCrel0 sA = 1 - - TCST1103, TCST1202, Semiconductors Rev. , 24-Aug-115 Document Number: 83764 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig.

9 12 - Relative Collector Current vs. Displacement Fig. 13 - Relative Collector Current vs. DisplacementPACKAGE DIMENSIONS in millimeters96 12006 0sA = mm0 10 20 30 40 50 60 70 80 90 100 110 - - Displacement (mm) I - Relative Collector CurrentCrel 120070 sA = mm0 10 20 30 40 50 60 70 80 90 100 110 - s - Displacement (mm)I - Relative Collector - - - 12094 Drawing-No.: : 2; TCST1103, TCST1202, Semiconductors Rev. , 24-Aug-116 Document Number: 83764 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

10 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimeters20252 Document Number: 80112 For technical questions, contact: , 02-Jul-091 Packaging and Ordering InformationPackaging and Ordering InformationVishay Semiconductors Notes(1)MOQ: minimum order quantity(2)Please refer to datasheetsTUBE SPECIFICATION FIGURESFig. 1 PART NUMBERMOQ (1)PCS PER TUBETUBE SPEC.(FIGURE)CONSTITUENTS(FORMS)CNY70400 080128 TCPT1300X012000 Reel(2)29 TCRT10001000 Bulk-26 TCRT10101000 Bulk-26 TCRT5000450050227 TCRT5000L240048327 TCST1030520065524 TCST1030L260065624 TCST1103102085424 TCST1202102085424 TCST1230480060724 TCST1300102085424 TCST2103102085424 TCST2202102085424 TCST2300102085424 TCST5250486030824 TCUT1300X012000 Reel(2)29 TCZT8020-PAER2500 Bulk-2215198 technical questions, contact: Number: 801122 Rev.