Transcription of ULSI - ndl.org.tw
1 : (wet chemistry) 1980 .. : (ULSI) (Cleanliness) . (Yield) (Quality) (Reliability) . (Devices) . ULSI .. : . (Particle) (Organic) . (Metal -Ions) . ULSI (Gate Oxide) . (Micro-roughness) (Native Oxide) . (Device) (Ultra-Thin Gate Oxide) (Electrical Parameters and Characteristics) .. ( . DI ). Piranha(SPM) / /DI H2SO4/H2O2/H2O.. SC-1(APM) / NH4OH/H2O2/H2O. /DI . SC-1(APM) / NH4OH/H2O2/H2O. /DI . SC-2(HPM) / HCl/H2O2/H2O. /DI . Piranha(SPM) / H2SO4/H2O2/H2O. /DI . DHF / ( HF/H2O. ). DHF / HF/H2O. ( ). BHF NH4F/HF/H2O.. 1. Particle). mask .. (pattern defect) . MOSFET .. 2.. (leakage current) . (Flat Band) .. 3.. (1) . H2SO4/H2O2 . NH3 Cl NH3 NH4Cl .. (2) .. 4. Native Oxide).. 5. (Miroroughness).. RCA . RCA (RCA Clean) 1960 . RCA Kern Puotinen RCA . 1(SC-1) 2(SC-2) . 1(standard clean 1) NH4OH/H2O2/H2O. 1:1:5 1:2:7. 75~85 . 10~20 . 2 (standard clean 2) HCl/H2O2/H2O.
2 1:1:6 1:2:8. 75~85 . 10~20 .. (Integrated Circuits) . (Pattern) (Etching) (Lithography) .. (Throughput) .. (Undercut) . 3 m .. ( ) ( ) . (Diffusion) (Boundary Layer) .. ( . NH4F:HF ) .. HF( ). SiO2 + 6HF H2 SiF6 + 2H2O2. H2 SiF6 HF . SC-1 . 1 . H2O2 .. NH4OH( ) . SC-1 NH4OH OH . OH .. SC-2 . 2 . PH .. H2SO4( ).. (H2SO4) (H2O2) (Caro s Acid-H2SO4); .. -CH2- + 3H2O2 2H2O2 + CO2. -CH2- + 3H2SO5 3H2SO4 + H2O2+ CO2. H3PO4( ).. Si3N4 + 4H3PO4 Si3(PO4)4 + 4HN3. Si3(PO4)4 (NH3) LOCOS .. 7:1(NH4F:HF).. SiO2 + 6HF H2 SiF6 + 2H2O2. H2 SiF6 HF . NH4F . PH.
