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晶圓的處理-薄膜 - web.cjcu.edu.tw

Oxidation .. chemical vapor deposition . CVD .. Si + O2 -> SiO2. Si + 2H2O -> SiO2 + 2H2.. CVD. CVD . SiH4 -> Si . +. 2H2. SiH4 + O2 -> SiO2 +. 2H2. 3 SiH4 + 4NH3 -> Si3N4 . + 12H2. 2PH3 + 4O2 ->P2O5 PSG . + 3H2O. CVD . APCVD CVD . atmospheric pressure CVD . LPCVD CVD low press re CVD . pressure PECVD CVD . plasma enhanced CVD . p . APCVD.. step coverage .. LPCVD.. APCVD .. back fill . fill . SiH4 LPCVD .. CVD .. PECVD. radio . frequency RF . q y .. radical .. sputtering . Planar Magnetron Sputtering . evaporation . diffusion .. ion i l ti . implanation .. reflow .. anneal .. RTA Rapid Thermal Anneal.

氧化(oxidation) • 熱氧化法 •薄膜堆積法:使用化學蒸氣沉 積(chemical vapor deposition, CVD)

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Transcription of 晶圓的處理-薄膜 - web.cjcu.edu.tw

1 Oxidation .. chemical vapor deposition . CVD .. Si + O2 -> SiO2. Si + 2H2O -> SiO2 + 2H2.. CVD. CVD . SiH4 -> Si . +. 2H2. SiH4 + O2 -> SiO2 +. 2H2. 3 SiH4 + 4NH3 -> Si3N4 . + 12H2. 2PH3 + 4O2 ->P2O5 PSG . + 3H2O. CVD . APCVD CVD . atmospheric pressure CVD . LPCVD CVD low press re CVD . pressure PECVD CVD . plasma enhanced CVD . p . APCVD.. step coverage .. LPCVD.. APCVD .. back fill . fill . SiH4 LPCVD .. CVD .. PECVD. radio . frequency RF . q y .. radical .. sputtering . Planar Magnetron Sputtering . evaporation . diffusion .. ion i l ti . implanation .. reflow .. anneal .. RTA Rapid Thermal Anneal.


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