화학기상증착법(CVD)을 이용한 진공 박막 공정기술

1 (CVD) . (CVD) .. Thin Film Vacuum Process Technology via .. Chemical Vapor Deposition Methods ( CVD) , , . Wan-Shick Hong .. Vacuum growth of thin films via chemical vapor deposition (CVD).. methods has been extensively used in modern semiconductor and flat panel display industries. The CVD processes have a wide range of variation and are categorized according to their working . conditions, power sources, precursor materials, and so forth. Basic components and process steps common to all CVD branches are , CVD . discussed. In addition, characteristics and applications of two major CVD techniques LPCVD and pecvd are reviewed briefly.. , deposition ' ' . , .. , CVD .. vapor . (deposition) (etching) , chemical . , .. , , . , . , (Physical Vapor Deposition, PVD) , CVD .. (uniform) (reliable) .. , , , .. < >. 1995 , , ( . ), . _ 9.. CVD .. , . CVD .. ~ mTorr . Low Pressure CVD (LPCVD), . [Fig. 2] Basic Steps in the CVD Process [1]. Plasma-Enhanced CVD. ( pecvd ), .. Metal-Organic CVD . (MOCVD).

2 , ( . , , ) . CVD .. CVD . , . 1 . , .. (source gas reactant gas). chamber . (gas inlet), . , , , (exhaust), . (substrate holder), , (excite) . (power source) . (activate) . chamber (radical) . , . regulator, chamber . mass flow controller , . valve , . exhaust(throttle) valve . CVD .. , radical , . , , radical . , . [1-3]. radical . CVD 2 , . (surface migration) . (network) .. (by-product) .. [Fig. 1] Common Components of the CVD system 10 Vacuum Magazine 2014 09 September (CVD) . Low-Pressure CVD Plasma-Enhanced Chemical Vapor Deposition 1000 .. LPCVD , (flexible) . , transistor gate (wearable) . (polysilicon), silicon dioxide, silicon nitride .. , tungsten, molybdenum, (11. tantalum [4]. 3000 mm x 3320 mm2) .. 600~700 . , . , . 200~300 .. hot-wall LPCVD 3 . 3-zone furnace tube [5].. ~ , . mTorr .. 600 . (thermal decomposition) .. Plasma Enhanced Chemical Vapor Deposition , , ( pecvd ) . step coverage .. display device, .. pecvd electric field( ) . , cold-wall system . Plasma.

3 Hot-wall system ( chamber) 4 , . , .. 1% . , . cleaning . (SiN x) . parallel-plate (capacitively coupled) pecvd . 4 [6]. Chamber . aluminum mm .. heater . susceptor , , . showerhead . [Fig. 3] Schematic of the LPCVD System [5] . _ 11.. [Fig. 5] A pecvd System Used in the Display Industry [Source: [Fig. 4] Schematic of the Capacitively-Coupled pecvd System [6] Applied Materials]. pecvd H2 . amorphous silicon (a-Si), silicon nitride (SiNx), , . silicon oxide (SiOx) . pecvd SiH4 .. electric field plasma . 400 . , 5 8 pecvd system . radical . surface mobility process chamber .. 2m system . , stoichiometric 2 . composition ( ) pecvd , . x [7].. Chamber . mean free path , . silane (SiH4) . SiH4 . dopant (PH3, . Radical . B2H6 ), n-type p-type doping silicon powder . , H2 flow rate chamber . microcrystalline silicon ( c-Si) (residence time) . RF power .. 550 growth rate . , amorphous phase .. , .. amorphous silicon Hydrogenated amorphous silicon defect . dangling bond( ) , dangling bond (.)

4 , ) density .. RF power , . dangling bond .. , hydrogenated dangling bond density 1015 cm-3 . amorphous silicon (a-Si:H) . 400 , 200 ~. 12 Vacuum Magazine 2014 09 September (CVD) . 300 RF power .. SiH4 , growth rate pecvd silicon nitride refractive index ~ , 1 ~ 10 /sec , RF power growth 105 ~ 1021 cm, breakdown field 106 ~ 107. rate . RF power V/cm . SiH4 . depletion effect , .. pecvd , CVD . nitride 10 ~ 35 % .. nitride 20 .. ~ 25 % . silicon nitrogen , LCD . Si H N H , pecvd (active matrix flat panel nitride ( 6%) . display) CVD . 3 amorphous random network . CVD . (coordination number) 6 = . , .. , . Si . 4 N CVD . 3 , .. Si N . 3 network .. strain . Si H N . References . H , [1] Pierson, Handbook of Chemical Vapor Deposition: Principles, Si/N stoichiometric composition Technology and Applications (Materials Science and Process Technology), 2nd Ed., William Andrew, (1999). , Si [2] S. Sivaram, Chemical Vapor Deposition: Thermal and Plasma Deposition of Electronic Materials, Springer, (2013).

5 Si/N Si - H N [3] D. Dobkin and Zuraw, Principles of Chemical Vapor - H Si/N Si Deposition: What's Going on Inside the Reactor, Springer, (2003). [4] A. Sherman, Chemical Vapor Deposition of Microelectronics, N . Noyes Publications, (1999). silicon dioxide network O [5] Jaeger, Introduction to Microelectronic Fabrication, 2nd Ed., Prentice Hall, (2002). 2 overconstraint [6] Jan Schmidt et al., Semicond. Sci. Technol. 16, 164 (2001). [7] , , , , , , , , 3 random network . , 2 , , 2014.. OH H2O . , O Si .. silicon Si H , . Si OH H2O .. dominant . , pecvd oxide 2 ~. 9% .. _ 13.