Energy-Efficient High-Power IGBTs - IXYS Corporation

Energy-Efficient High-Power IGBTs (From 600V to 4500V) IXYS Corporation (NASDAQ: IXYS) offers the broadest IGBTs product portfolios in the power semiconductor industry; designers can

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Clare Inc., Officially Becomes IXYS Integrated Circuits ...

PRESS RELEASE Clare Inc., Officially Becomes IXYS Integrated Circuits Division In a move to streamline corporate identity and improve customer response, Clare Inc.

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Preliminary Technical Information - IXYS Corporation

IXFN62N80Q3 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. g

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リニア・パワーMOSFETの基礎とアプリケーション Abdus …

IXYS代理店 ジェイレップ株式会社 本社 〒564-0051 大阪府吹田市豊津町2-1 Tel：06-6368-2111 Fax：06-6368-2114 e-mail：info@j-rep.com

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WESTCODE

WESTCODE An IXYS Company Rectifier Diode Types W0642WC160 to W0642WC240 Data Sheet. Types W0642WC160 to W0642WC240 Issue 1 Page 5 of 9 September, 2004 5.3 D.C. Thermal Impedance Calculation ∑ = = − = ⋅− p n p

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Soft Recovery Diode Type M0139S/R ... - IXYS UK Westcode Ltd

Soft Recovery Diode Types M0139S/R#120 to M0139S/R#180 Data Sheet. Types M0139S/R#120 to M0139S/R#180 Issue 2 Page 3 of 11 September 2016 Notes on Ratings and Characteristics

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MMA-005022 v3 - Microwave Technology

MMA-005022B 30KHz-50GHz Traveling Wave Amplifier MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-952-4000 WEB www.mwtinc.com Data sheet is subject to change without notice.

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IXYS POWER MOSFETs Datasheet Definition

IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 2 The power dissipation is the maximum calculated power that the device can

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IXYS Power MOSFETs, Modules, and Gate Drivers

March 2014 www.ixys.com FEATURES ‘Normally-On’ operation Linear mode tolerant Low R DS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified

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MOSFET/IGBT Drivers Theory and Applications

internal body diode and the parasitic BJT. 1.3 Turn-on and Turn-off Phenomena 1.3.1 Turn-on Phenomenon To understand Turn-on and Turn-off phenomena of the