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IXYS POWER MOSFETs Datasheet Definition

ixys PowerMOSFET Datasheet Parameters DefinitionAbdus Sattar, ixys CorporationIXAN00651 ixys providesdatasheets with parametersthat areessential andusefulforselectingthe appropriate device as well asfor predetectingits performance in anapplication. Thegraphs included in the Datasheet representtypical performancecharacteristicandcan be used to extrapolate from one set of operating conditions toanother. POWER MOSFET generally contains a bodydiode, whichprovides freewheeling operation intheinductive load 1 shows the equivalentcircuitforanN-Channelanda P-Channel POWER 1: (a)anN-Channel (b)a P-Channel Enhancement-Mode POWER MOSFET1 EssentialRatings andCharacteristics1. MaximumRatingsThe ratings are limiting values for a deviceand validfor the whole range of TJandTJMThe junction temperature(JT) range is-55 ~ 150oC in most cases andit is thedevice s permissible temperaturerangewithin which the device may beoperatedcontinuously.

IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 2 The power dissipation is the maximum calculated power that the device can

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