Digital FET, N-Channel - ON Semiconductor

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Semiconductor Components Industries, LLC, 1997March, 2020 Rev. 51Publication Order Number:FDV303N/DDigital FET, N-ChannelFDV303NGeneral DescriptionThese N channel enhancement mode field effect transistors areproduced using ON Semiconductor s proprietary, high cell density,DMOS technology. This very high density process is tailored tominimize on state resistance at low gate drive conditions. This deviceis designed especially for application in battery circuits using eitherone lithium or three cadmium or NMH cells. It can be used as aninverter or for high efficiency miniature discrete DC/DC conversionin compact portable electronic devices like cellular phones and device has excellent on state resistance even at gate drivevoltages as low as 25 V, A Continuous, 2 A Peak RDS(ON) = @ VGS = V RDS(ON) = @ VGS= V Very Low Level Gate Drive Requirements Allowing Direct Operationin 3 V Circuits, VGS(th) < 1 V Gate Source Zener for ESD Ruggedness, > 6 kV Human BodyModel Compact Industry Standard SOT 23 Surface Mount Package This Device is Pb Free, Halogen Free/BFR Free and is RoH

Digital FET, N-Channel FDV303N General Description These N−Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance at low gate drive conditions. This device

  Dome, Field, Enhancement, Effect, Channel, Channel enhancement mode field effect