Performance and Ruggedness of 1200V SiC - Trench - …

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of the newly developed SiC Trench-MOSFET combining all these achievements. II. DEVICE CONCEPT A. Challenges compared to silicon-based MOSFETs Si and SiC both have a thermal oxide which is at a first glance the common way to create an almost ideal MOS interface. But there are some well-known challenges to making a SiC MOSFET.

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