Transcription of 100V Dual N-Channel MOSFET
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100V Dual N-Channel MOSFET
AO4892. 100V dual N-Channel MOSFET . General Description Product Summary The AO4892 uses trench MOSFET technology that is VDS 100V. uniquely optimized to provide the most efficient high ID (at VGS=10V) 4A. frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 68m . switching power losses are minimized due to an RDS(ON) (at VGS= ) < 94m . extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% Rg Tested SOIC-8. D1 D2. Top View Bottom View Top View S1 1 8 D1. G1 2 7 D1. S2 3 6 D2. G1 G2. G2 4 5 D2. S1 S2. Pin1. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 100 V.
AO4892 100V Dual N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 4A R DS(ON) (at V GS =10V) < 68m Ω R DS(ON) (at V GS =4.5V) < 94m Ω 100% UIS Tested 100% R g Tested Symbol The AO4892 uses trench MOSFET technology that is
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