Transcription of 30V N-Channel MOSFET
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30V N-Channel MOSFET
AO3400A. 30V N-Channel MOSFET . General Description Product Summary The AO3400A combines advanced trench MOSFET VDS 30V. technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) < . load switch or in PWM applications . RDS(ON) (at VGS = ) < 32m . RDS(ON) (at VGS = ) < 48m . SOT23. Top View Bottom View D. D. D. G G. S. S. G S. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V. Gate-Source Voltage VGS 12 V. Continuous Drain TA=25 C ID. Current TA=70 C A. C. Pulsed Drain Current IDM 30. TA=25 C PD W. Power Dissipation B TA=70 C Junction and Storage Temperature Range TJ, TSTG -55 to 150 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 70 90 C/W. R JA. Maximum Junction-to-Ambient A D Steady-State 100 125 C/W. Maximum Junction-to-Lead Steady-State R JL 63 80 C/W.
load switch or in PWM applications. V Parameter Maximum Units Absolute Maximum Ratings T A=25°C unless otherwise noted 30V Drain-Source Voltage 30 G D S SOT23 Top View Bottom View D G G S S D VGS IDM TJ, T STG Symbol t ≤ 10s Steady-State Steady-State RθJL 1.4 Maximum Junction-to-Lead °C/W Maximum Junction-to-Ambient A D °C/W 63 125 80
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