30V N-Channel MOSFET

1 AO3400A. 30V N-Channel MOSFET . General Description Product Summary The AO3400A combines advanced trench MOSFET VDS 30V. technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) < . load switch or in PWM applications . RDS(ON) (at VGS = ) < 32m . RDS(ON) (at VGS = ) < 48m . SOT23. Top View Bottom View D. D. D. G G. S. S. G S. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V. Gate-Source Voltage VGS 12 V. Continuous Drain TA=25 C ID. Current TA=70 C A. C. Pulsed Drain Current IDM 30. TA=25 C PD W. Power Dissipation B TA=70 C Junction and Storage Temperature Range TJ, TSTG -55 to 150 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 70 90 C/W. R JA. Maximum Junction-to-Ambient A D Steady-State 100 125 C/W. Maximum Junction-to-Lead Steady-State R JL 63 80 C/W.

2 Rev 3: Dec 2011 Page 1 of 5. AO3400A. Electrical Characteristics (TJ=25 C unless otherwise noted). Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS. BVDSS Drain-Source Breakdown Voltage ID=250 A, VGS=0V 30 V. VDS=30V, VGS=0V 1. IDSS Zero Gate Voltage Drain Current A. TJ=55 C 5. IGSS Gate-Body leakage current VDS=0V, VGS= 12V 100 nA. VGS(th) Gate Threshold Voltage VDS=VGS ID=250 A V. ID(ON) On state drain current VGS= , VDS=5V 30 A. VGS=10V, ID= 18 m . TJ=125 C 28 38. RDS(ON) Static Drain-Source On-Resistance VGS= , ID=5A 19 32 m . VGS= , ID=3A 24 48 m . gFS Forward Transconductance VDS=5V, ID= 33 S. VSD Diode Forward Voltage IS=1A,VGS=0V 1 V. IS Maximum Body-Diode Continuous Current 2 A. DYNAMIC PARAMETERS. Ciss Input Capacitance 630 pF. Coss Output Capacitance VGS=0V, VDS=15V, f=1 MHz 75 pF. Crss Reverse Transfer Capacitance 50 pF. Rg Gate resistance VGS=0V, VDS=0V, f=1 MHz 3 . SWITCHING PARAMETERS. Qg Total Gate Charge 6 7 nC.

3 Qgs Gate Source Charge VGS= , VDS=15V, ID= nC. Qgd Gate Drain Charge nC. tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time VGS=10V, VDS=15V, RL= , ns tD(off) Turn-Off DelayTime RGEN=3 25 ns tf Turn-Off Fall Time 4 ns trr Body Diode Reverse Recovery Time IF= , dI/dt=100A/ s ns Qrr Body Diode Reverse Recovery Charge IF= , dI/dt=100A/ s nC. A. The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 C. D. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle max.

4 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. applications OR USES AS CRITICAL. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING. OUT OF SUCH applications OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Dec 2011 Page 2 of 5. AO3400A. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 40 15. 10V 3V. 35 VDS=5V. 12. 30. 25 9. ID (A). ID(A). 20. 15 6. 125 C 25 C. 10. VGS=2V 3. 5. 0 0. 0 1 2 3 4 5 0 1 2 3. VDS (Volts) VGS(Volts). Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E). 30 VGS= Normalized On-Resistance ID=5A.

5 25. ). VGS= RDS(ON) (m . 17. 20. VGS=10V5. ID= 15. 10. VGS=10V. 1. 10 0 5 10 15 20 0 25 50 75 100 125 150 175. ID (A). Figure 3: On-Resistance vs. Drain Current and Gate Temperature ( C) 0. Voltage (Note E) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E). 50 +01. ID= +00. 40 40. ). RDS(ON) (m . 125 C. IS (A). 125 C. 30 25 C. 20. 25 C. 10 0 2 4 6 8 10 VGS (Volts) VSD (Volts). Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E). (Note E). Rev 3: Dec 2011 Page 3 of 5. AO3400A. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 5 1000. VDS=15V. ID= 4 800. Ciss Capacitance (pF). VGS (Volts). 3 600. 2 400. Coss 1 200. Crss 0 0. 0 2 4 6 8 0 5 10 15 20 25 30. Qg (nC) VDS (Volts). Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000. TA=25 C. 10 s RDS(ON) 100. Power (W). limited 100 s ID (Amps). 1ms 10ms 10. TJ(Max)=150 C. TA=25 C 10s DC. 1. 10 1000. 1 10 100.

6 VDS (Volts) Pulse Width (s). Figure 10: Single Pulse Power Rating Junction-to- Figure 9: Maximum Forward Biased Safe Ambient (Note F). Operating Area (Note F). 10. D=Ton/T In descending order Z JA Normalized Transient TJ,PK=TA+ JA D= , , , , , , single pulse Thermal Resistance 1 R JA=125 C/W. PD. Single Pulse Ton T. 1 10 100 1000. Pulse Width (s). Figure 11: Normalized Maximum Transient Thermal Impedance (Note F). Rev 3: Dec 2011 Page 4 of 5. AO3400A. Gate Charge Test Circuit & Waveform Vgs Qg 10V. +. VDC. + Vds Qgs Qgd - VDC. DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL. V ds Vds 90 %. DUT. + Vdd Vgs VDC. Rg - 1 0%. Vgs V gs t d (o n ) tr t d (o ff) tf to n t o ff D iode R ecovery T est C ircuit & W aveform s V ds + Q rr = - Idt DUT. V gs t rr V ds - L Isd IF. Isd dI/dt + V dd I RM. V gs VD C. V dd Ig - V ds Rev 3: Dec 2011 Page 5 of 5.