Transcription of 40V N-Channel MOSFET
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40V N-Channel MOSFET
AOD4184/AOI418440V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V)50A RDS(ON) (at VGS=10V)< 8m RDS(ON) (at VGS= )< 11m 100% UIS Tested100% Rg TestedSymbolVDSD rain-Source Voltage40 The AOD4184/AOI4184 used advanced trenchtechnology and design to provide excellent RDS(ON) withlow gate charge. With the excellent thermal resistance ofthe DPAK package, those devices are well suited for highcurrent load Maximum Ratings TA=25 C unless otherwise noted40 VGD SGGDDSSDTop ViewBottom ViewTO-251 AIPAKTO252 DPAKTopViewBottom ViewGDSDGDSVDSVGSIDMIAS, IAREAS, EARTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JCTypMaxTC=25 CJunction and Storage Temperature Range-55 to 175 CThermal CharacteristicsUnitsMaximum Junction-to-Ambient A C/WR JA184422 ParameterV 20 Gate-Source VoltageDrain-Source Voltage40 Avalanche energy L= CmJAvalanche Current CIDSMATA=70 C120 Pulsed Drain Current CContinuous DrainCurrent GID5040TC=25 CTC=100 CPower Dissipation BPDC o
AOD4184/AOI4184 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 I D (A) VGS (Volts) Figure 2: Transfer Characteristics (Note E)
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