40V N-Channel MOSFET

1 AOD4184/AOI418440V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V)50A RDS(ON) (at VGS=10V)< 8m RDS(ON) (at VGS= )< 11m 100% UIS Tested100% Rg TestedSymbolVDSD rain-Source Voltage40 The AOD4184/AOI4184 used advanced trenchtechnology and design to provide excellent RDS(ON) withlow gate charge. With the excellent thermal resistance ofthe DPAK package, those devices are well suited for highcurrent load Maximum Ratings TA=25 C unless otherwise noted40 VGD SGGDDSSDTop ViewBottom ViewTO-251 AIPAKTO252 DPAKTopViewBottom ViewGDSDGDSVDSVGSIDMIAS, IAREAS, EARTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JCTypMaxTC=25 CJunction and Storage Temperature Range-55 to 175 CThermal CharacteristicsUnitsMaximum Junction-to-Ambient A C/WR JA184422 ParameterV 20 Gate-Source VoltageDrain-Source Voltage40 Avalanche energy L= CmJAvalanche Current CIDSMATA=70 C120 Pulsed Drain Current CContinuous DrainCurrent GID5040TC=25 CTC=100 CPower Dissipation BPDC ontinuous DrainCurrent611235 WPower Dissipation APDSMWTA=70 CMaximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A 0.

2 July 1 of 6 AOD4184/AOI4184 SymbolMinTypMaxUnitsBVDSS40 VVDS=40V, VGS=0V1TJ=55 C5 IGSS 100nAVGS(th)Gate Threshold (ON) Qg(10V) ( ) (on) CapacitanceTurn-On DelayTimeDYNAMIC PARAMETERSTurn-On Rise TimeVGS=10V, VDS=20V, ID=20 AGate Source ChargeGate Drain ChargeTotal Gate ChargeIS=1A,VGS=0 VVDS=5V, ID=20 ASWITCHING PARAMETERSM aximum Body-Diode Continuous CurrentInput CapacitanceVGS= , ID=15 AForward TransconductanceDiode Forward VoltageV=10V, V=20V, R=1 ,Gate resistanceVGS=0V, VDS=0V, f=1 MHzTotal Gate ChargeReverse Transfer CapacitanceVGS=0V, VDS=20V, f=1 MHzStatic Drain-Source On-ResistanceIDSS AVDS=VGS ID=250 AVDS=0V, VGS= 20 VZero Gate Voltage Drain CurrentGate-Body leakage currentm On state drain currentElectrical Characteristics (TJ=25 C unless otherwise noted)

3 STATIC PARAMETERSP arameterConditionsDrain-Source Breakdown VoltageID=250 A, VGS=0 VVGS=10V, VDS=5 VVGS=10V, ID=20 ARDS(ON) (off) IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Rise TimeBody Diode Reverse Recovery ChargeIF=20A, dI/dt=100A/ sTurn-Off DelayTimeIF=20A, dI/dt=100A/ sVGS=10V, VDS=20V, RL=1 ,RGEN=3 Turn-Off Fall TimeBody Diode Reverse Recovery TimeA. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C.

4 The Power dissipation PDSMis based on R JAand the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175 C may be used if the PCB allows The power dissipation PDis based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency and duty cycles to keep initial TJ =25 The R JAis the sum of the thermal impedence from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175 C.

5 The SOA curve provides a single pulse rating. G. The maximum current rating is package These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. 0: July 2 of 6 AOD4184/AOI4184 TYPICAL ELECTRICAL AND THERMAL (A)VGS(Volts)Figure 2: Transfer Characteristics (Note E)5678910051015202530 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 125 150 175 Normalized On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS= C125 CVDS=5 VVGS= (A)VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= + + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 C(Note E)510152025246810 RDS(ON)(m )VGS(Volts)Figure 5: On-Resistance vs.

6 Gate-Source Voltage (Note E)ID=20A25 C125 C 0: July 3 of 6 AOD4184/AOI4184 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180246810051015202 530 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0500100015002000250001020 3040 Capacitance (pF)VDS(Volts)Figure 8: Capacitance (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-CossCrssVDS=20 VID=20 ATJ(Max)=175 CTC=25 C10 (Amps)VDS(Volts)Figure 9: Maximum Forward Biased Safe 10 s10ms1msDCRDS(ON) limitedTJ(Max)=175 CTC=25 C100 s40 Case (Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseOperating Area (Note F)R JC=3 C/W 0: July 4 of 6 AOD4184/AOI4184 TYPICAL ELECTRICAL AND THERMAL (A) Peak Avalanche Current Time in avalanche, tA(s)Figure 12: Single Pulse Avalanche capability (Note C)01020304050600255075100125150175 Power Dissipation (W)TCASE( C)Figure 13: Power De-rating (Note F)01020304050600255075100125150175 Current rating ID(A)TCASE( C)Figure 14: Current De-rating (Note F)TA=25 (W)Pulse Width (s)Figure 15.

7 Single Pulse Power Rating Junction-to-TA=25 CTA=150 CTA=100 CTA=125 JANormalized Transient Thermal ResistancePulse Width (s)Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseFigure 14: Current De-rating (Note F)Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)R JA=55 C/W 0: July 5 of 6 AOD4184/AOI4184 -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffId+LVds BVUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsDSS2E = 1/2 LIARARVddVgsVgsRgDUT-+VDCVgsIdVgsIIgVgs- +VDCDUTLVgsVdsIsdIsdDiode Recovery Test Circuit & WaveformsVds -Vds +IFARdI/dtIRMrrVddVddQ = - Idttrr 0: July 6 of 6