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LTC4359 (Rev D) - analog.com

LTC43591 Rev DFor more information FeedbackTYPICAL APPLICATION FEATURESDESCRIPTIONI deal Diode Controller with Reverse Input ProtectionThe LT C 4359 is a positive high voltage ideal diode control-ler that drives an external N- channel MOSFET to replace a Schottky diode. It controls the forward-voltage drop across the MOSFET to ensure smooth current delivery without oscillation even at light loads. If a power source fails or is shorted, a fast turn-off minimizes reverse cur-rent transients. A shutdown mode is available to reduce the quiescent current to 9 A for load switch and 14 A for ideal diode used in high current diode applications, the LTC4359 reduces power consumption, heat dissipation, voltage loss and PC board area.

LTC4359 6 Rev D For more information www.analog.com BLOCK DIAGRAM OPERATION The LTC4359 controls an external N-channel MOSFET to …

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Transcription of LTC4359 (Rev D) - analog.com

1 LTC43591 Rev DFor more information FeedbackTYPICAL APPLICATION FEATURESDESCRIPTIONI deal Diode Controller with Reverse Input ProtectionThe LT C 4359 is a positive high voltage ideal diode control-ler that drives an external N- channel MOSFET to replace a Schottky diode. It controls the forward-voltage drop across the MOSFET to ensure smooth current delivery without oscillation even at light loads. If a power source fails or is shorted, a fast turn-off minimizes reverse cur-rent transients. A shutdown mode is available to reduce the quiescent current to 9 A for load switch and 14 A for ideal diode used in high current diode applications, the LTC4359 reduces power consumption, heat dissipation, voltage loss and PC board area.

2 With its wide operating voltage range, the ability to withstand reverse input voltage, and high temperature rating, the LTC4359 satisfies the demanding requirements of both automotive and telecom applications. The LTC4359 also easily ORs power sources in systems with redundant , 20A Automotive Reverse-Battery ProtectionPower Dissipation vs Load CurrentAPPLICATIONSn Reduces Power Dissipation by Replacing a Power Schottky Dioden Wide Operating Voltage Range: 4V to 80Vn Reverse Input Protection to 40Vn Low 9 A Shutdown Currentn Low 150 A Operating Currentn Smooth Switchover without Oscillationn Controls Single or Back-to-Back N- channel MOSFETsn Available in 6-Pin (2mm 3mm) DFN, 8-Lead MSOP and 8-Lead SO Packagesn Automotive Battery Protectionn Redundant Power Suppliesn Supply Holdupn Telecom Infrastructuren Computer Systems/Serversn Solar SystemsAll registered trademarks and trademarks are the property of their respective owners.

3 4359 TA01 LTC4359 VSSSHDNINSOURCEOUT47nF1kGATEBSC028N06 NSSMAT70A70 VSMAJ24A24 VVIN12 VVOUT TO LOADCURRENT (A)0 POWER DISSIPATION (W)486204359 TA01a205101510 SCHOTTKY DIODE (SBG2040CT)POWERSAVEDMOSFET (BSC028N06NS)LTC43592 Rev DFor more information MAXIMUM RATINGSIN, SOURCE, SHDN .. 40V to 100 VOUT (Note 3) .. 2V to 100 VIN OUT .. 100V to 100 VIN SOURCE .. 1V to 80 VGATE SOURCE (Note 4) .. to +10V(Notes 1, 2)TOP VIEWVSSSHDNINOUTGATESOURCEDCB PACKAGE6-LEAD (2mm 3mm) PLASTIC DFNTJMAX = 150 C, JA = 64 C/WEXPOSED PAD (PIN 7) PCB VSS CONNECTION OPTIONAL45763211234 GATESOURCENCIN8765 OUTNCVSSSHDNTOP VIEWMS8 PACKAGE8-LEAD PLASTIC MSOPTJMAX = 150 C, JA = 163 C/W12348765 TOP VIEWOUTNCVSSSHDNGATESOURCENCINS8 PACKAGE8-LEAD PLASTIC SOTJMAX = 150 C, JA = 130 C/WPIN CONFIGURATIONORDER INFORMATIONO perating Ambient Temperature Range LTC4359C.

4 0 C to 70 C LTC4359I .. 40 C to 85 C LTC4359H .. 40 C to 125 CStorage Temperature Range .. 65 C to 150 CLead Temperature (Soldering, 10 sec) MS, SO Packages ..300 CTAPE AND REEL (MINI)TAPE AND REELPART MARKING*PACKAGE DESCRIPTIONTEMPERATURE RANGELTC4359 CDCB#TRMPBFLTC4359 CDCB#TRPBFLFKF6-Lead (2mm 3mm) Plastic DFN0 C to 70 CLTC4359 IDCB#TRMPBFLTC4359 IDCB#TRPBFLFKF6-Lead (2mm 3mm) Plastic DFN 40 C to 85 CLTC4359 HDCB#TRMPBFLTC4359 HDCB#TRPBFLFKF6-Lead (2mm 3mm) Plastic DFN 40 C to 125 CTUBETAPE AND REELPART MARKING*PACKAGE DESCRIPTIONTEMPERATURE RANGELTC4359 CMS8#PBFLTC4359 CMS8#TRPBFLTFKD8-Lead Plastic MSOP0 C to 70 CLTC4359 IMS8#PBFLTC4359 IMS8#TRPBFLTFKD8-Lead Plastic MSOP 40 C to 85 CLTC4359 HMS8#PBFLTC4359 HMS8#TRPBFLTFKD8-Lead Plastic MSOP 40 C to 125 CLTC4359CS8#PBFLTC4359CS8#TRPBF43598-Lea d Plastic SO0 C to 70 CLTC4359IS8#PBFLTC4359IS8#TRPBF43598-Lea d Plastic SO 40 C to 85 CLTC4359HS8#PBFLTC4359HS8#TRPBF43598-Lea d Plastic SO 40 C to 125 CConsult ADI Marketing for parts specified with wider operating temperature ranges.

5 *The temperature grade is identified by a label on the shipping more information on lead free part marking, go to: For more information on tape and reel specifications, go to: Some packages are available in 500 unit reels through designated sales channels with #TRMPBF #orderinfoLTC43593 Rev DFor more information 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and 2. All currents into pins are positive; all voltages are referenced to VSS unless otherwise Operating Supply Rangel480 VIININ Current IN = 12V IN = OUT = 12V, SHDN = 0V IN = OUT = 24V, SHDN = 0V IN = 40Vl l l l 0150 9 15 15200 20 30 40 A A A AIOUTOUT CurrentIN = 12V, In Regulation IN = 12V, VSD = 1V IN = OUT = 12V, SHDN = 0V IN = OUT = 24V, SHDN = 0V OUT = 12V, IN = SHDN = 0Vl l l l l3 5 120 220 3 3 12 A A A A AISOURCESOURCE CurrentIN = 12V, VSD = 1V IN = SOURCE = 12V, SHDN = 0V SOURCE = 40Vl l l 1 4 15 A A mA VGATEGate Drive (GATE SOURCE)IN = 4V, IGATE = 0, 1 A IN = 8V to 80V.

6 IGATE = 0, 1 Al 1215 15V V VSDS ource-Drain Regulation Voltage (IN OUT) VGATE = (UP)Gate Pull-Up CurrentGATE = IN, VSD = 6 10 14 AIGATE(DOWN)Gate Pull-Down Current Fault Condition, VGATE = 5V, VSD = 1V Shutdown Mode, VGATE = 5V, VSD = l70 180 mA mAtOFFGate Turn-Off Delay Time VSD = to 1V, VGATE < 2V, CGATE = stONGate Turn-On Delay TimeIN = 12V, SOURCE = OUT = 0V, SHDN = 0V to 2V VGATE > , CGATE = 0pF200 sVSHDN(TH)SHDN Pin Input ThresholdIN = 4V to (FLT)SHDN Pin Float VoltageIN = 4V to Pin CurrentSHDN = , LTC4359I, LTC4359C SHDN = , LTC4359H SHDN = 40V Maximum Allowable Leakage, VIN = 4Vl l l 1 3 3 100 5 5 A A mA nAVSOURCE(TH)Reverse SOURCE Threshold for GATE OffGATE = 0V, IGATE(DOWN) = 1mAl The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25 C, IN = 12V, SOURCE = IN, unless otherwise 3.

7 An internal clamp limits the OUT pin to a minimum of 100V above VSS. Driving this pin with more current than 1mA may damage the 4. An internal clamp limits the GATE pin to a minimum of 10V above IN or 100V above VSS. Driving this pin to voltages beyond the clamp may damage the CHARACTERISTICSLTC43594 Rev DFor more information PERFORMANCE CHARACTERISTICSOUT Current vs Forward Voltage DropSOURCE Current vs Forward Voltage DropTotal Negative Current vs Negative Input VoltageGate Current vs Forward Voltage Drop Gate Drive vs Gate CurrentGate Turn-Off Time vs GATE CapacitanceIN Current in Regulation IN Current in Shutdown SOURCE Current in ShutdownVIN (V)0 IIN ( A)100150804359 G01500204060200 VIN (V)0 IIN ( A)3040804359 G022010020406050TA = 40 CTA = 25 CTA = 85 CTA = 125 CIN = SOURCE = OUTSHDN = 0 VVSOURCE (V)0 ISOURCE ( A)68804359 G0342020406010TA = 40 CTA = 25 CTA = 85 CTA = 125 CIN = SOURCE = OUTSHDN = 0V VSD (V)

8 1 IOUT ( A)8012014359 G04400 = 4 VVIN = 12 VVIN = 48V VSD (V) 1 ISOURCE ( A)50015010014359 G05 50 = 4 VVSOURCE > 12 VIN = SOURCEVOLTAGE (V)0 IIN + ISOURCE + ISHDN (mA) 1 2 404359 G06 10 20 30IN = SOURCE= SHDN VSD (mV) 50 IGATE ( A)100 10 201504359 G07203040050100 VIN = VSOURCE = 12 VVGATE = VIN + ( A)0 VGATE (V)10 104359 G0850 5 1515IN = SOURCEVIN = 4 VVIN = 8 VVIN > 12 VCGATE (nF)0tOFF (ns)40060084359 G09200024610800 VIN = 12V VSD = 1 VLTC43595 Rev DFor more information FUNCTIONSE xposed Pad (DCB Package Only): Exposed pad may be left open or connected to : Gate Drive Output. The GATE pin pulls high, enhanc-ing the N- channel MOSFET when the load current creates more than 30mV of voltage drop across the MOSFET.

9 When the load current is small, the gate is actively driven to maintain 30mV across the MOSFET. If reverse current flows, a fast pull-down circuit connects the GATE to the SOURCE pin within s, turning off the MOSFET. IN: Voltage Sense and Supply Voltage. IN is the anode of the ideal diode. The voltage sensed at this pin is used to control the MOSFET (MS8 and S8 Packages): No Connection. Not internally : Drain Voltage Sense. OUT is the cathode of the ideal diode and the common output when multiple LTC4359s are configured as an ideal diode-OR. It connects either di-rectly or through a 2k resistor to the drain of the N- channel MOSFET. The voltage sensed at this pin is used to control the MOSFET : Shutdown Control Input.

10 The LTC4359 can be shut down to a low current mode by pulling the SHDN pin below Pulling this pin above 2V or disconnect-ing it allows an internal A current source to turn the part on. Maintain board leakage to less than 100nA for proper operation. The SHDN pin can be pulled up to 100V or down to 40V with respect to VSS without damage. If the shutdown feature is not used, connect SHDN to : Source Connection. SOURCE is the return path of the gate fast pull-down. Connect this pin as close as possible to the source of the external N- channel MOSFET. VSS: Supply Voltage Return and Device PERFORMANCE CHARACTERISTICSGate Turn-Off Time vs Initial OverdriveGate Turn-Off Time vs Final OverdriveLoad Current vs Forward Voltage DropVINITIAL (V)0tPD (ns)15020014359 = 12V VSD = VINITIAL 1V VFINAL (V)0tPD (ns)1500 14359 G1110005000 = 12V VSD = 45mV VFINAL VSD (mV)0 CURRENT (A)101004359 G1282460502575 FDMS86101 FDB3632 FDS3732 LTC43596 Rev DFor more information DIAGRAMOPERATIONThe LTC4359 controls an external N- channel MOSFET to form an ideal diode.


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