Transcription of 80V N-Channel MOSFET
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80V N-Channel MOSFET
AOD281080V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V)46A RDS(ON) (at VGS=10V)< RDS(ON) (at VGS=6V)< 12m 100% UIS Tested100% Rg TestedSymbolVDS80 VThe AOD2810 uses trench MOSFET technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of RDS(ON), Ciss and Coss. This device isideal for boost converters and synchronous rectifiers forconsumer, telecom, industrial power supplies and Maximum Ratings TA=25 C unless otherwise notedDrain-Source Voltage80GD STO252 DPAKTop ViewBottom ViewG S D G S D VGSIDMIASEASTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JCPDM aximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A and Storage Temperature Range-55 to 175 CThermal CharacteristicsParameterTypMax160 Pulsed Drain Current CContinuous DrainCurrent GWPower Dissipation APDSMWTA=70
AOD2810 80V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 46A R DS(ON) (at V GS =10V) < 8.5m Ω R DS(ON) (at V GS =6V) < 12m Ω 100% UIS Tested 100% R g Tested Symbol VDS The AOD2810 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high
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